The studies of room-temperature electrical resistivity of post-annealed LaNiO3-δ thin film on Si(100)/n by RF magnetron sputtering

2004 ◽  
Author(s):  
X. D. Zhang ◽  
Xiang J. Meng ◽  
J. L. Sun ◽  
G. S. Wang ◽  
Tie Lin ◽  
...  
Keyword(s):  
Thin Film ◽  
Electrical Resistivity ◽  
Magnetron Sputtering ◽  
Room Temperature ◽  
Rf Magnetron Sputtering

High performance thin film transistor with HfSiO x dielectric fabricated at room temperature RF-magnetron sputtering

2013 ◽  
Vol 9 (4) ◽  
pp. 381-384 ◽  
Author(s):  
Dongkyu Cho ◽  
Sanghyun Woo ◽  
Jungil Yang ◽  
Donghee Lee ◽  
Yoosung Lim ◽  
...  
Keyword(s):  
Thin Film ◽  
Magnetron Sputtering ◽  
High Performance ◽  
Room Temperature ◽  
Thin Film Transistor ◽  
Rf Magnetron Sputtering

Structural and electrical properties of AlxIn1-xN (0.10≤x≤0.94) films grown on sapphire substrates

2010 ◽  
Vol 25 (9) ◽  
pp. 1842-1846 ◽  
Author(s):  
Qi-Feng Han ◽  
Cheng-Hong Duan ◽  
Guo-Ping Du ◽  
Wang-Zhou Shi
Keyword(s):  
Electrical Resistivity ◽  
Magnetron Sputtering ◽  
Room Temperature ◽  
Rf Magnetron Sputtering ◽  
Sapphire Substrates ◽  
Wide Range ◽  
Structural And Electrical Properties ◽  
Xrd Patterns ◽  
Surface Morphologies ◽  
532 Nm

AlxIn1–xN films were grown on (0001) sapphire substrates by reactive radiofrequency (RF) magnetron sputtering in an ambient of Ar and N2. The XRD patterns are shown from AlxIn1–xN films grown on AlN/sapphire substrates using a wide range of magnetron power ratio settings. The wurtzite structure films have high crystal quality with full-width at half-maximum (FWHM) in the range of 0.22°–0.52°. The surface morphologies were observed by scanning electron microscopy (SEM). Raman spectra were measured on the AlxIn1–xN surfaces in a backscattering configuration at room temperature with 532 nm laser excitation and show A1(LO) bimodal behavior. Electrical resistivity and electron mobility were measured by the Hall effect method in the conventional Van der Pauw geometry at room temperature. The lowest electrical resistivity is 1 × 10−3 Ω·cm. This work suggests that reactive magnetron sputtering is a promising method for growing AlxIn1–xN films in over a large composition range.

Preparation of ZnO:Al thin film on transparent TPT substrate at room temperature by RF magnetron sputtering technique

2009 ◽  
Vol 63 (16) ◽  
pp. 1371-1373 ◽  
Author(s):  
Xiao-jing Wang ◽  
Qing-song Lei ◽  
Wei Xu ◽  
Wei-li Zhou ◽  
Jun Yu
Keyword(s):  
Thin Film ◽  
Magnetron Sputtering ◽  
Room Temperature ◽  
Rf Magnetron Sputtering

Dielectric and Tunable Properties of Lead Barium Strontium Titanate Thin Films Fabricated by Radio Frequency Magnetron Sputtering Method

2013 ◽  
Vol 652-654 ◽  
pp. 1728-1732
Author(s):  
Zhi Meng Luo ◽  
Xiao Hua Sun ◽  
Shuang Hou ◽  
Ying Yang ◽  
Jun Zou
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Dielectric Loss ◽  
Magnetron Sputtering ◽  
Radio Frequency ◽  
Deposition Temperature ◽  
Room Temperature ◽  
Rf Magnetron Sputtering ◽  
Si Substrates ◽  
Tunable Properties

The Pb0.25Ba0.15Sr0.6TiO3 (PBST) thin films have been deposited on Pt/Ti/SiO2/Si substrates at different temperatures by radio frequency (rf) magnetron sputtering method. The microstructure, surface morphology, dielectric and tunable properties of PBST thin films were investigated as a function of deposition temperature. It’s found that the orientation of PBST thin films was adjusted by deposition temperature. The PBST thin film deposited at room temperature shows (100) preferred orientation and its dielectric constant and tunability are higher than that of PBST thin film deposited at 450 °C. Furthermore, the PBST thin film deposited at room temperature shows lower dielectric loss and leakage current, which makes it exhibit higher FOM of 49.47 for its appropriate tunability of 44.38% and low dielectric loss of 0.00897.

High-mobility thin-film transistor with amorphous InGaZnO4 channel fabricated by room temperature rf-magnetron sputtering

2006 ◽  
Vol 89 (11) ◽  
pp. 112123 ◽  
Author(s):  
Hisato Yabuta ◽  
Masafumi Sano ◽  
Katsumi Abe ◽  
Toshiaki Aiba ◽  
Tohru Den ◽  
...  
Keyword(s):  
Thin Film ◽  
Magnetron Sputtering ◽  
Room Temperature ◽  
Thin Film Transistor ◽  
High Mobility ◽  
Rf Magnetron Sputtering

Room-Temperature Deposition of Silicon Thin Films by RF Magnetron Sputtering

2012 ◽  
Vol 576 ◽  
pp. 543-547 ◽  
Author(s):  
Shaiful Bakhtiar Hashim ◽  
Norhidayatul Hikmee Mahzan ◽  
Sukreen Hana Herman ◽  
Mohamad Rusop Mahmood
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Magnetron Sputtering ◽  
Glass Substrate ◽  
Room Temperature ◽  
Rf Magnetron Sputtering ◽  
Deposition Pressure ◽  
Silicon Thin Film ◽  
Silicon Thin Films ◽  
Temperature Deposition

Silicon thin film was successfully deposited on glass substrate using Radio frequency (RF) magnetron sputtering. The effect of deposition pressure on the physical and structural properties of thin films on the glass substrate was studied. The film thickness and deposition rate decreased with decreasing deposition pressure. Field emission scanning electron microscopy (FESEM) shows as the deposition pressure increased, the surface morphology transform from concise structured to not closely pack on the surface. Raman spectroscopy result showed that the peak was around 508 cm-1, showing that the thin film is nanocrystalline instead of polycrystalline silicon.

Effect of Al2O3-doping on the structure and optoelectronic characteristics of MgZnO thin film prepared by RF magnetron sputtering

2021 ◽  
Vol 127 (7) ◽  
Author(s):  
Du-Cheng Tsai ◽  
Feng-Kuan Chen ◽  
Zue-Chin Chang ◽  
Bing-Hau Kuo ◽  
Erh-Chiang Chen ◽  
...  
Keyword(s):  
Thin Film ◽  
Magnetron Sputtering ◽  
Rf Magnetron Sputtering ◽  
Al2o3 Doping

Electron Conduction of Nd0.6Sr0.4FeO3−δ Thin Film with Oxygen Vacancies Prepared by RF Magnetron Sputtering

2017 ◽  
Vol 86 (7) ◽  
pp. 074704 ◽  
Author(s):  
Wataru Namiki ◽  
Takashi Tsuchiya ◽  
Makoto Takayanagi ◽  
Shoto Furuichi ◽  
Makoto Minohara ◽  
...  
Keyword(s):  
Thin Film ◽  
Magnetron Sputtering ◽  
Oxygen Vacancies ◽  
Rf Magnetron Sputtering ◽  
Electron Conduction

125MeV Si9+ ion irradiation of calcium phosphate thin film coated by rf-magnetron sputtering technique

2011 ◽  
Vol 257 (6) ◽  
pp. 2134-2141 ◽  
Author(s):  
K. Elayaraja ◽  
M.I. Ahymah Joshy ◽  
R.V. Suganthi ◽  
S. Narayana Kalkura ◽  
M. Palanichamy ◽  
...  
Keyword(s):  
Thin Film ◽  
Calcium Phosphate ◽  
Magnetron Sputtering ◽  
Ion Irradiation ◽  
Rf Magnetron Sputtering
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