Investigation into the modeling of field-effect mobility in disordered organic semiconductors

2005 ◽  
Author(s):  
H. L. Kwok
Keyword(s):  
Organic Semiconductors ◽  
Field Effect ◽  
Field Effect Mobility

Asymmetric organic semiconductors for high performance single crystalline field-effect transistors with low activation energy

2020 ◽  
Vol 8 (18) ◽  
pp. 6006-6012 ◽  
Author(s):  
Fei Qiu ◽  
Yicai Dong ◽  
Jie Liu ◽  
Yanan Sun ◽  
Hua Geng ◽  
...  
Keyword(s):  
Activation Energy ◽  
Organic Semiconductors ◽  
Field Effect ◽  
High Field ◽  
High Performance ◽  
Field Effect Transistors ◽  
Field Effect Mobility ◽  
Crystalline Field ◽  
Asymmetric Structures ◽  
Anthracene Derivatives

We synthesized three asymmetric anthracene derivatives, in which 2-phvA shows a high field-effect mobility of 10 cm2 V−1 s−1. This work demonstrates the potential advantages of asymmetric structures for high-performance organic semiconductors.

Maximizing Field-Effect Mobility and Solid-State Luminescence in Organic Semiconductors

2012 ◽  
Vol 51 (16) ◽  
pp. 3837-3841 ◽  
Author(s):  
Afshin Dadvand ◽  
Andrey G. Moiseev ◽  
Kosuke Sawabe ◽  
Wei-Hsin Sun ◽  
Brandon Djukic ◽  
...  
Keyword(s):  
Solid State ◽  
Organic Semiconductors ◽  
Field Effect ◽  
Field Effect Mobility ◽  
State Luminescence

Maximizing Field-Effect Mobility and Solid-State Luminescence in Organic Semiconductors

2012 ◽  
Vol 124 (16) ◽  
pp. 3903-3907 ◽  
Author(s):  
Afshin Dadvand ◽  
Andrey G. Moiseev ◽  
Kosuke Sawabe ◽  
Wei-Hsin Sun ◽  
Brandon Djukic ◽  
...  
Keyword(s):  
Solid State ◽  
Organic Semiconductors ◽  
Field Effect ◽  
Field Effect Mobility ◽  
State Luminescence

Molecular packing and n-channel thin film transistors of chlorinated cyclobuta[1,2-b:3,4-b′]diquinoxalines

2015 ◽  
Vol 51 (20) ◽  
pp. 4275-4278 ◽  
Author(s):  
Shuaijun Yang ◽  
Danqing Liu ◽  
Xiaomin Xu ◽  
Qian Miao
Keyword(s):  
Thin Film ◽  
Organic Semiconductors ◽  
Thin Film Transistors ◽  
Field Effect ◽  
Molecular Packing ◽  
Field Effect Mobility

Introduction of chlorine substituents into cyclobuta[1,2-b:3,4-b′]diquinoxaline leads to tunable molecular packing motifs and n-type organic semiconductors with a field effect mobility of up to 0.42 cm2 V−1 s−1 in thin film transistors.

scholarly journals Influence of Active Channel Layer Thickness on SnO2 Thin-Film Transistor Performance

Electronics ◽  
2021 ◽  
Vol 10 (2) ◽  
pp. 200
Author(s):  
Do Won Kim ◽  
Hyeon Joong Kim ◽  
Changmin Lee ◽  
Kyoungdu Kim ◽  
Jin-Hyuk Bae ◽  
...  
Keyword(s):  
Thin Film ◽  
Field Effect ◽  
Thin Film Transistor ◽  
Sol Gel ◽  
Precursor Concentration ◽  
Sno2 Thin Film ◽  
Field Effect Mobility ◽  
Si Substrates ◽  
Channel Layer ◽  
Active Channel

Sol-gel processed SnO2 thin-film transistors (TFTs) were fabricated on SiO2/p+ Si substrates. The SnO2 active channel layer was deposited by the sol-gel spin coating method. Precursor concentration influenced the film thickness and surface roughness. As the concentration of the precursor was increased, the deposited films were thicker and smoother. The device performance was influenced by the thickness and roughness of the SnO2 active channel layer. Decreased precursor concentration resulted in a fabricated device with lower field-effect mobility, larger subthreshold swing (SS), and increased threshold voltage (Vth), originating from the lower free carrier concentration and increase in trap sites. The fabricated SnO2 TFTs, with an optimized 0.030 M precursor, had a field-effect mobility of 9.38 cm2/Vs, an SS of 1.99, an Ion/Ioff value of ~4.0 × 107, and showed enhancement mode operation and positive Vth, equal to 9.83 V.

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