InAs/(GaIn)Sb short-period superlattices for focal plane arrays

2005 ◽  
Author(s):  
Robert Rehm ◽  
Martin Walther ◽  
Johannes Schmitz ◽  
Joachim Fleissner ◽  
Frank Fuchs ◽  
...  
Keyword(s):  
Focal Plane ◽  
Focal Plane Arrays ◽  
Short Period ◽  
Short Period Superlattices

InAs/GaSb type-II short-period superlattices for advanced single and dual-color focal plane arrays

2007 ◽  
Author(s):  
Martin Walther ◽  
Robert Rehm ◽  
Joachim Fleissner ◽  
Johannes Schmitz ◽  
Johann Ziegler ◽  
...  
Keyword(s):  
Focal Plane ◽  
Focal Plane Arrays ◽  
Type Ii ◽  
Dual Color ◽  
Short Period ◽  
Short Period Superlattices

256×256 focal plane array midwavelength infrared camera based on InAs/GaSb short-period superlattices

2005 ◽  
Vol 34 (6) ◽  
pp. 722-725 ◽  
Author(s):  
M. Walther ◽  
R. Rehm ◽  
F. Fuchs ◽  
J. Schmitz ◽  
J. Fleißner ◽  
...  
Keyword(s):  
Focal Plane ◽  
Infrared Camera ◽  
Focal Plane Array ◽  
Short Period ◽  
Short Period Superlattices

InAs/GaSb superlattice focal plane arrays for high-resolution thermal imaging

2006 ◽  
Vol 14 (1) ◽  
Author(s):  
R. Rehm ◽  
M. Walther ◽  
J. Schmitz ◽  
J. Fleißner ◽  
F. Fuchs ◽  
...  
Keyword(s):  
Quantum Efficiency ◽  
Thermal Imaging ◽  
Focal Plane ◽  
Focal Plane Arrays ◽  
Camera System ◽  
Fully Integrated ◽  
Superlattice Structure ◽  
Short Period ◽  
Noise Equivalent Temperature Difference

AbstractThe first fully operational mid-IR (3–5 μm) 256×256 IR-FPA camera system based on a type-II InAs/GaSb short-period superlattice showing an excellent noise equivalent temperature difference below 10 mK and a very uniform performance has been realized. We report on the development and fabrication of the detecor chip, i.e., epitaxy, processing technology and electro-optical characterization of fully integrated InAs/GaSb superlattice focal plane arrays. While the superlattice design employed for the first demonstrator camera yielded a quantum efficiency around 30%, a superlattice structure grown with a thicker active layer and an optimized V/III BEP ratio during growth of the InAs layers exhibits a significant increase in quantum efficiency. Quantitative responsivity measurements reveal a quantum efficiency of about 60% for InAs/GaSb superlattice focal plane arrays after implementing this design improvement.

Persistent photoconductivity in uniforndy and selectively silicon doped AlAs / GaAs short period superlattices

1991 ◽  
Vol 1 (4) ◽  
pp. 503-510 ◽  
Author(s):  
P. Jeanjean ◽  
J. Sicart ◽  
J. L. Robert ◽  
F. Mollot ◽  
R. Planel
Keyword(s):  
Persistent Photoconductivity ◽  
Short Period ◽  
Short Period Superlattices ◽  
Silicon Doped

Blue-green lasers based on short-period superlattices in II-VI compounds

1999 ◽  
Vol 169 (4) ◽  
pp. 468 ◽  
Author(s):  
S.V. Ivanov ◽  
Petr S. Kop'ev ◽  
A.A. Toropov
Keyword(s):  
Short Period ◽  
Short Period Superlattices

Semiconductor YBACUO Uncooled Focal Plane Arrays

2006 ◽  
Author(s):  
Donald Butler ◽  
Zeynep Celik-Bulter
Keyword(s):  
Focal Plane ◽  
Focal Plane Arrays

Further Developments in Improved Sensitivity, Low-cost Uncooled IR Detector Focal Plane Arrays

2010 ◽  
Author(s):  
Wendy L. Sarney ◽  
John W. Little ◽  
Kimberley A. Olver ◽  
Frank E. Livingston ◽  
Krisztian Niesz ◽  
...  
Keyword(s):  
Focal Plane ◽  
Low Cost ◽  
Focal Plane Arrays ◽  
Ir Detector
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