Developing an understanding of electron beam imaging of deep contact hole structures using Monte Carlo and spatial charge distribution simulations

Author(s):  
Neal Sullivan ◽  
Byoung H. Lee ◽  
Yeong-Uk Ko
1989 ◽  
Vol 65 (3) ◽  
pp. 1147-1151 ◽  
Author(s):  
T. Maeno ◽  
T. Futami ◽  
H. Kushibe ◽  
T. Takada

Author(s):  
S. R. Messenger ◽  
J. H. Warner ◽  
K. Trautz ◽  
R. Uribe ◽  
R. J. Walters

2011 ◽  
Vol 497 ◽  
pp. 127-132 ◽  
Author(s):  
Hui Zhang ◽  
Takuro Tamura ◽  
You Yin ◽  
Sumio Hosaka

We have studied on theoretical electron energy deposition in thin resist layer on Si substrate for electron beam lithography. We made Monte Carlo simulation to calculate the energy distribution and to consider formation of nanometer sized pattern regarding electron energy, resist thickness and resist type. The energy distribution in 100 nm-thick resist on Si substrate were calculated for small pattern. The calculations show that 4 nm-wide pattern will be formed when resist thickness is less than 30 nm. Furthermore, a negative resist is more suitable than positive resist by the estimation of a shape of the energy distribution.


1993 ◽  
Vol 99 (5) ◽  
pp. 4231-4232 ◽  
Author(s):  
J. L. F. Abascal ◽  
Alexander P. Sassi ◽  
Harvey W. Blanch ◽  
John M. Prausnitz

2009 ◽  
Vol 49 (9-11) ◽  
pp. 972-976 ◽  
Author(s):  
Mauro Ciappa ◽  
Luigi Mangiacapra ◽  
Maria Stangoni ◽  
Stephan Ott ◽  
Wolfgang Fichtner

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