Waveguide design and fabrication of trench for hybrid integrated optic devices

2005 ◽  
Author(s):  
Suntae Jung ◽  
Jeong Hwan Song ◽  
Kyoung-Youm Kim ◽  
Yunkyung Oh
Keyword(s):  
Integrated Optic Devices ◽  
Waveguide Design

Theory of planar electrode systems for integrated-optic devices

1993 ◽  
Author(s):  
Alexander B. Sotsky ◽  
Luidmila I. Sotskaya ◽  
V. I. Sivucha
Keyword(s):  
Integrated Optic Devices ◽  
Planar Electrode ◽  
Electrode Systems

Acousto-optics in integrated-optic devices for optical recording

1991 ◽  
Author(s):  
Dmitry V. Petrov ◽  
A. L. Belostotsky ◽  
V. G. Dolgopolov ◽  
A. S. Leonov ◽  
L. A. Fedjukhin
Keyword(s):  
Optical Recording ◽  
Integrated Optic Devices

Coupled strip-slot waveguide design for dispersion compensation

2015 ◽  
Vol 47 (9) ◽  
pp. 3161-3169 ◽  
Author(s):  
Vidhi Mann ◽  
Nandam Ashok ◽  
Vipul Rastogi
Keyword(s):  
Dispersion Compensation ◽  
Slot Waveguide ◽  
Waveguide Design

Integrated optic devices for coherent transmission

1986 ◽  
Vol 4 (7) ◽  
pp. 852-857 ◽  
Author(s):  
W. Stallard ◽  
A. Beaumont ◽  
R. Booth
Keyword(s):  
Integrated Optic Devices ◽  
Coherent Transmission

Tapered waveguide design for mode conversion in mode division multiplexing (MDM)

2021 ◽  
pp. 1-11
Author(s):  
N. A. Mahadzir ◽  
A. Amphawan ◽  
T. Masunda ◽  
P. S. Menon ◽  
A. Jalar ◽  
...  
Keyword(s):  
Mode Conversion ◽  
Mode Division Multiplexing ◽  
Tapered Waveguide ◽  
Waveguide Design

scholarly journals Unidirectional Slow Light Transmission in Heterostructure Photonic Crystal Waveguide

2018 ◽  
Vol 8 (10) ◽  
pp. 1858 ◽  
Author(s):  
Qiuyue Zhang ◽  
Xun Li
Keyword(s):  
Photonic Crystal ◽  
Slow Light ◽  
Environmental Changes ◽  
Light Transmission ◽  
Square Lattice ◽  
Manufacturing Defects ◽  
Interfacial Defects ◽  
Waveguide Design ◽  
Light Waveguide ◽  
Backward Propagation

In conventional photonic crystal systems, extrinsic scattering resulting from random manufacturing defects or environmental changes is a major source of loss that causes performance degradation, and the backscattering loss is amplified as the group velocity slows down. In order to overcome the limitations in slow light systems, we propose a backscattering-immune slow light waveguide design. The waveguide is based on an interface between a square lattice of magneto-optical photonic crystal with precisely tailored rod radii of the first two rows and a titled 45 degrees square lattice of Alumina photonic crystal with an aligned band gap. High group indices of 77, 68, 64, and 60 with the normalized frequency bandwidths of 0.444%, 0.481%, 0.485%, and 0.491% are obtained, respectively. The corresponding normalized delay-bandwidth products remain around 0.32 for all cases, which are higher than previously reported works based on rod radius adjustment. The robustness for the edge modes against different types of interfacial defects is observed for the lack of backward propagation modes at the same frequencies as the unidirectional edge modes. Furthermore, the transmission direction can be controlled by the sign of the externally applied magnetic field normal to the plane.

scholarly journals Fabrication of Planar Integrated Optic Devices by Laser Patterning

10.5772/23326 ◽  
2011 ◽  
Author(s):  
P.V.S. Marques ◽  
D. Alexandre ◽  
A. Ghasemphour ◽  
P. Moreira ◽  
A.M.P. Leite
Keyword(s):  
Laser Patterning ◽  
Integrated Optic Devices

Sb-Based Mid-Infrared Diode Lasers

2001 ◽  
Vol 692 ◽  
Author(s):  
C. Mermelstein ◽  
M. Rattunde ◽  
J. Schmitz ◽  
S. Simanowski ◽  
R. Kiefer ◽  
...  
Keyword(s):  
Current Density ◽  
Cavity Length ◽  
Diode Lasers ◽  
Characteristic Temperature ◽  
Threshold Current ◽  
Threshold Current Density ◽  
Ridge Waveguide ◽  
Single Element ◽  
Type I ◽  
Waveguide Design

AbstractIn this paper we review recent progress achieved in our development of type-I GaInAsSb/AlGaAsSb quantum-well (QW) lasers with emission wavelength in the 1.74–2.34 μm range. Triple-QW (3-QW) and single-QW (SQW) diode lasers having broadened waveguide design emitting around 2.26 μm have been studied in particular. Comparing the two designs we have find that the threshold current density at infinite cavity length as well as the transparency current density scale with the number of QWs. Maximum cw operating temperature exceeding 50°C and 90°C has been obtained for ridge waveguide lasers emitting above and below 2 μm, respectively. Ridge waveguide diode lasers emitting at 1.94 μm exhibited internal quantum efficiencies in excess of 77%, internal losses of 6 cm−1, and threshold current density at infinite cavity length as low as 121 A/cm2 reflecting the superior quality of our diode lasers, all values recorded at 280 K. A high characteristic temperature TOof 179 K for the threshold current along with a value of T1 = 433 K for the characteristic temperature of the external efficiency have been attained for the 240–280 K temperature interval. Room temperature cw output powers exceeding 1.7 W have been demonstrated for broad area single element devices with highreflection/ antireflection coated mirror facets, mounted epi-side down. The latter result is a proof for the high power capabilities of these GaSb-based mid-ir diode lasers.

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