VUV and soft x-ray diffraction grating fabrication by holographic ion beam etching

2005 ◽  
Author(s):  
Xiangdong Xu ◽  
Yilin Hong ◽  
Shaojun Fu
Keyword(s):  
Diffraction Grating ◽  
Ion Beam ◽  
X Ray Diffraction ◽  
Ion Beam Etching ◽  
X Ray ◽  
Grating Fabrication

Surface Morphological Changes of Polyimide with Oxygen Reactive Ion Beam Etching (RIBE)

1988 ◽  
Vol 129 ◽  
Author(s):  
Kyung W. Paik ◽  
Arthur L. Ruoff
Keyword(s):  
Morphological Changes ◽  
Ion Beam ◽  
X Ray Diffraction ◽  
Cross Sectional ◽  
Ion Beam Etching ◽  
X Ray ◽  
Disordered Phase ◽  
Beam Incidence ◽  
Yield Difference ◽  
Sectional Plane

ABSTRACTAt the beginning of etching, surface asperities appeared on the top plane of the polyimide (PI) film. The formation of surface asperities is due to the ordered phase in PI film. The known dimension of the ordered phase measured by X-ray diffraction is consistant with the size of surface asperities, 100 Å, observed by TEM. Further ion doses made these asperties evolve into smooth bumps which then eroded into cones as a result of etch yield difference as a function of the angle of beam incidence Y(θ)/Y(0) which has a maximum at θ=70. Finally cones led to the development of grass-likestructure on the top plane of the PI film. The formation of platelike structure on the cross-sectional plane of PI indicates that the structural inhomogeniety of the PI film(the ordered and disordered phase) is the main cause for the surface morphological changes of PI.

Processing Effects on the Contact Resistance of Ion Beam Sputtered Silver on Highly Oriented C-Axis and A-Axis YBCO Films

1992 ◽  
Vol 275 ◽  
Author(s):  
M. Narbutovskih ◽  
J. Rosner ◽  
P. Merchant ◽  
R. D. Jacowitz
Keyword(s):  
Thin Films ◽  
Contact Resistance ◽  
Ion Beam ◽  
Substrate Surface ◽  
Amorphous Layer ◽  
X Ray Diffraction ◽  
Axis Orientation ◽  
Ion Beam Etching ◽  
X Ray ◽  
Processing Effects

ABSTRACTThis paper reports on the processes used to achieve low resistance silver contacts to YBCO thin films that have either c-axis or a-axis orientation. Characterization by x-ray diffraction and TEM verified that these films are highly oriented with either the a or the c axis oriented perpendicular to the substrate surface. TEM examination of some of the Ag/YBCO interfaces reveals the presence of an amorphous layer. We will describe the effects of ion beam etching and RTA alloying on the contact resistivity for both orientations.

Mev Ion Beam Synthesis of Well-Defined Buried 3C-Sic Layers in Silicon

1995 ◽  
Vol 396 ◽  
Author(s):  
J.K.N. Lindner ◽  
B. Götz ◽  
A. Frohnwieser ◽  
B. Stritzker
Keyword(s):  
Electron Diffraction ◽  
Depth Distribution ◽  
Ion Beam ◽  
X Ray Diffraction ◽  
X Ray ◽  
Ion Beam Synthesis ◽  
Post Implantation

AbstractWell-defined, homogenous, deep-buried 3C-SiC layers have been formed in silicon by ion beam synthesis using MeV C+ ions. Layers are characterized by RBS/channeling, X-ray diffraction, x-sectional TEM and electron diffraction. The redistribution of implanted carbon atoms into a rectangular carbon depth distribution associated with a well-defined layer during the post-implantation anneal is shown to depend strongly on the existence of crystalline carbide precipitates in the as-implanted state.

Characterization of Natural and Synthesized FeTiO3 Crystals With RBS/PIXE/XRD

1997 ◽  
Vol 07 (03n04) ◽  
pp. 265-275
Author(s):  
R. Q. Zhang ◽  
S. Yamamoto ◽  
Z. N. Dai ◽  
K. Narumi ◽  
A. Miyashita ◽  
...  
Keyword(s):  
Single Crystals ◽  
Ion Beam ◽  
Pressure Control ◽  
Floating Zone ◽  
X Ray Diffraction ◽  
X Ray ◽  
Beam Analysis ◽  
Ppm Level

Natural FeTiO 3 (illuminate) and synthesized FeTiO 3, single crystals were characterized by Rutherford backscattering spectroscopy combined with channeling technique and particle-induced x-ray emission (RBS-C and PIXE). The results obtained by the ion beam analysis were supplemented by the x-ray diffraction analysis to identify the crystallographic phase. Oriented single crystals of synthesized FeTiO 3 were grown under the pressure control of CO 2 and H 2 mixture gas using a single-crystal floating zone technique. The crystal quality of synthesized FeTiO 3 single crystals could be improved by the thermal treatment but the exact pressure control is needed to avoid the precipitation of Fe 2 O 3 even during the annealing procedure. Natural FeTiO 3 contains several kinds of impurities such as Mn , Mg , Na and Si . The synthesized samples contain Al , Si and Na which are around 100 ppm level as impurities. The PBS-C results of the natural sample imply that Mn impurities occupy the Fe sublattice in FeTiO 3 or in mixed phase between ilmenite and hematite.

Formation and Thermal Stability of Nd0.32Y0.68Si1.7 Layers Formed by Channeled Ion Beam Synthesis

1998 ◽  
Vol 514 ◽  
Author(s):  
M. F. Wu ◽  
A. Vantomne ◽  
S. Hogg ◽  
H. Pattyn ◽  
G. Langouche ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Ion Beam ◽  
Hexagonal Structure ◽  
Orthorhombic Structure ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Good Crystalline Quality ◽  
Ion Beam Synthesis ◽  
Thermal Stability Of

ABSTRACTThe Nd-disilicide, which exists only in a tetragonal or an orthorhombic structure, cannot be grown epitaxially on a Si(111) substrate. However, by adding Y and using channeled ion beam synthesis, hexagonal Nd0.32Y0.68Si1.7 epilayers with lattice constant of aepi = 0.3915 nm and cepi = 0.4152 nm and with good crystalline quality (χmin of Nd and Y is 3.5% and 4.3 % respectively) are formed in a Si(111) substrate. This shows that the addition of Y to the Nd-Si system forces the latter into a hexagonal structure. The epilayer is stable up to 950 °C; annealing at 1000 °C results in partial transformation into other phases. The formation, the structure and the thermal stability of this ternary silicide have been studied using Rutherford backscattering/channeling, x-ray diffraction and transmission electron microscopy.

Oxidation of Alloy-X in Subcritical, Transition, and Supercritical Water

CORROSION ◽  
10.5006/3881 ◽  
2021 ◽  
Author(s):  
Zachary Karmiol ◽  
Dev Chidambaram
Keyword(s):  
Supercritical Water ◽  
Photoelectron Spectroscopy ◽  
Focused Ion Beam ◽  
Elevated Temperatures ◽  
Subcritical Water ◽  
Ion Beam ◽  
X Ray Diffraction ◽  
X Ray ◽  
Nickel Based Superalloy ◽  
Before And After

This work investigates the oxidation of a nickel based superalloy, namely Alloy X, in water at elevated temperatures: subcritical water at 261°C and 27 MPa, the transition between subcritical and supercritical water at 374°C and 27 MPa, and supercritical water at 380°C and 27 MPa for 100 hours. The morphology of the sample surfaces were studied using scanning electron microscopy coupled with focused ion beam milling, and the surface chemistry was investigated using X-ray diffraction, Raman spectroscopy, energy dispersive X-ray spectroscopy, and X-ray photoelectron spectroscopy before and after exposure studies. Surfaces of all samples were identified to comprise of a ferrite spinel containing aluminum.

Changes in the Spectral Characteristics of Aluminum Films Deposited under Assisting Argon Ion Beam

2015 ◽  
Vol 1084 ◽  
pp. 11-15
Author(s):  
Sergey P. Umnov ◽  
Oleg Kh. Asainov ◽  
Svetlana N. Popova ◽  
Aleksey N. Lemachko
Keyword(s):  
Magnetron Sputtering ◽  
Ion Beam ◽  
Spectral Characteristics ◽  
Crystal Defects ◽  
X Ray Diffraction ◽  
Aluminum Films ◽  
X Ray ◽  
Ion Assistance ◽  
Argon Ion ◽  
Uv Range

High-reflectance aluminum films are widely used in applied optics. As part of this work, we deposited aluminum films on glass substrates by magnetron sputtering using argon ion beam assistance. The reflectivity of the films obtained was measured on the SF-256 spectrophotometer. The microstructure and topology of the films were examined with a transmission electron microscope (TEM), X-ray diffraction (XRD) and atomic force microscope (AFM). The studies have shown that the aluminum films deposited with ion assistance have higher reflectance in the UV range than the films formed by magnetron sputtering alone. The results of TEM and AFM measurements show that the geometric factor (crystallite size, surface roughness) is not the reason for the increase of reflectivity. X-ray diffraction analyses have shown a significant increase in microstress in the aluminum films deposited with ion assistance, which is caused by an increase in the defect density of the vacancy-type crystal structure. The results have shown that the increase in the density of crystal defects leads to an increase in reflectance in the UV range.

Relationship Between Microstructure and Hardness of ZrN/TiN Multi-Layers with Various Bilayer Thicknesses

2010 ◽  
Vol 63 ◽  
pp. 392-395
Author(s):  
Yoshifumi Aoi ◽  
Satoru Furuhata ◽  
Hiromi Nakano
Keyword(s):  
Mechanical Property ◽  
Electron Microscope ◽  
Transmission Electron Microscope ◽  
Ion Beam ◽  
Ion Beam Sputtering ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Beam Sputtering ◽  
Microstructure And Mechanical Property

ZrN/TiN multi-layers were synthesized by ion beam sputtering technique. Microstructure and mechanical property of the ZrN/TiN multi-layers were characterized and the relationships between microstructure and hardness of the ZrN/TiN multi-layers with various bilayer thicknesses and thickness ratios were investigated. The microstructure of multi-layers have been investigated using transmission electron microscope (TEM) and X-ray diffraction (XRD).

A Blazed Si Grating for Soft X-Ray Fabricated by Two-Stage Reactive Ion-Beam Etching

1983 ◽  
Vol 22 (Part 2, No. 4) ◽  
pp. L219-L220 ◽  
Author(s):  
Hiroaki Aritome ◽  
Toshiya Yamato ◽  
Shinji Matsui ◽  
Susumu Namba
Keyword(s):  
Ion Beam ◽  
Two Stage ◽  
Ion Beam Etching ◽  
X Ray ◽  
Reactive Ion Beam Etching

Possibility for the form correction of X-ray mirrors by reactive ion-beam etching

2012 ◽  
Vol 6 (3) ◽  
pp. 487-489 ◽  
Author(s):  
A. A. Akhsakhalyan ◽  
A. D. Akhsakhalyan ◽  
Yu. A. Vainer ◽  
D. G. Volgunov ◽  
M. V. Zorina ◽  
...  
Keyword(s):  
Ion Beam ◽  
Ion Beam Etching ◽  
X Ray ◽  
Reactive Ion Beam Etching
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