Optical absorption in semiconductor nanorings under electric and magnetic fields

2005 ◽  
Author(s):  
Tong-Yi Zhang ◽  
Jun-Cheng Cao ◽  
Wei Zhao
Keyword(s):  
Magnetic Fields ◽  
Optical Absorption ◽  
Electric And Magnetic Fields

Effects of external fields on the optical absorption of quantum multirings

2020 ◽  
Vol 34 (17) ◽  
pp. 2050153
Author(s):  
S. Ghajarpour-Nobandegani ◽  
V. Ashrafi-Dalkhani ◽  
M. J. Karimi
Keyword(s):  
Finite Element Method ◽  
Finite Element ◽  
Magnetic Fields ◽  
Optical Absorption ◽  
Density Matrix ◽  
Two Dimensional ◽  
Matrix Approach ◽  
Energy Eigenvalues ◽  
Electric And Magnetic Fields ◽  
Dimensional Finite Element

In this paper, the effects of the electric and magnetic fields on the optical absorption of GaAs/AlGaAs quantum multirings were studied. Using the two-dimensional finite element method, energy eigenvalues and wavefunctions were calculated, and optical absorption was obtained by the density matrix approach. The result showed that optical absorption increases with increasing number and size of the rings.

Phonon-assisted absorption in crossed electric and magnetic fields in direct-band semiconductors. II

1969 ◽  
Vol 47 (5) ◽  
pp. 521-531 ◽  
Author(s):  
I. P. Batra
Keyword(s):  
Magnetic Fields ◽  
Optical Absorption ◽  
Electric Field ◽  
Energy Gap ◽  
Level Structure ◽  
Perturbation Expansion ◽  
Weak Electric Field ◽  
Electric And Magnetic Fields ◽  
Direct Energy ◽  
New Perturbation

In polar semiconductors with direct energy gaps, optical absorption is observed for photons with energies well below that corresponding to the energy gap. It is now established that the absorption tail (Urbach's law) is due to indirect phonon-assisted optical transitions involving the absorption of one or more optical phonons of energy kΘ. In the present paper we have considered the effect of crossed electric and magnetic fields on the optical absorption in that region of the Urbach tail where second order processes are dominant. The experimentally favorable situation involving a weak electric field is investigated. A new perturbation expansion in terms of a dimensionless parameter is developed in this connection and is used to obtain the weak electric field limit. Such a study may be useful in exploring the Landau level structure of the valence and conduction bands separately.

Sign in / Sign up

Export Citation Format

Share Document