New infrared luminescence band in silicon nanowires

2004 ◽  
Author(s):  
Oleg O. Pikaruk ◽  
Galina Y. Rudko ◽  
Evgeniy G. Gule ◽  
Alla I. Klimovskaya ◽  
Igor P. Ostrovskii
2014 ◽  
Vol 51 (3) ◽  
pp. 42-50 ◽  
Author(s):  
J. Grube ◽  
A. Sarakovskis ◽  
G. Doke ◽  
M. Springis

Abstract In this work, NaLaF4 doped with Er3+ of different concentrations was synthesized. The luminescence spectrum for NaLaF4:Er3+ (0.2 mol%) at 489 nm excitation reveals characteristic Er3+ luminescence bands in the green (540 nm), red (660 nm) and infrared (980 nm) spectral regions. The green luminescence band originated from the 4S3/2 → 4I15/2 transition is the most intensive one in the luminescence spectrum. As the concentration of the activator is increasing, the intensity of all luminescence bands changes significantly. The super-linear increase of the infrared luminescence intensity with increasing Er3+ concentration as well as the quenching of green luminescence at the concentrations exceeding 2 mol% can be attributed to the cross-relaxation process between the activator ions.


2020 ◽  
Vol 92 (2) ◽  
pp. 20101
Author(s):  
Behnam Kheyraddini Mousavi ◽  
Morteza Rezaei Talarposhti ◽  
Farshid Karbassian ◽  
Arash Kheyraddini Mousavi

Metal-assisted chemical etching (MACE) is applied for fabrication of silicon nanowires (SiNWs). We have shown the effect of amorphous sheath of SiNWs by treating the nanowires with SF6 and the resulting reduction of absorption bandwidth, i.e. making SiNWs semi-transparent in near-infrared (IR). For the first time, by treating the fabricated SiNWs with copper containing HF∕H2O2∕H2O solution, we have generated crystalline nanowires with broader light absorption spectrum, up to λ = 1 μm. Both the absorption and photo-luminescence (PL) of the SiNWs are observed from visible to IR wavelengths. It is found that the SiNWs have PL at visible and near Infrared wavelengths, which may infer presence of mechanisms such as forbidden gap transitions other can involvement of plasmonic resonances. Non-radiative recombination of excitons is one of the reasons behind absorption of SiNWs. Also, on the dielectric metal interface, the absorption mechanism can be due to plasmonic dissipation or plasmon-assisted generation of excitons in the indirect band-gap material. Comparison between nanowires with and without metallic nanoparticles has revealed the effect of nanoparticles on absorption enhancement. The broader near IR absorption, paves the way for applications like hyperthermia of cancer while the optical transition in near IR also facilitates harvesting electromagnetic energy at a broad spectrum from visible to IR.


2007 ◽  
Vol 102 (10) ◽  
pp. 104303 ◽  
Author(s):  
Y. Zhang ◽  
J. X. Cao ◽  
Y. Xiao ◽  
X. H. Yan

Author(s):  
Meng-Meng Su ◽  
Jia-Jia Kang ◽  
Shu-Qin Liu ◽  
Chang-Gong Meng ◽  
Yan-Qin Li ◽  
...  

2021 ◽  
Author(s):  
Silvia Stašková ◽  
Milena Reháková ◽  
Michal Oravec ◽  
Andrea Jabconová

2021 ◽  
pp. 111512
Author(s):  
Hani Shashaani ◽  
Navid Akbari ◽  
Mahsa Faramarzpour ◽  
Mohammad Salemizadeh Parizi ◽  
Shohreh Vanaei ◽  
...  

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