Problems of applications of high power IR radiation in aquatic medium under high pressure

2004 ◽  
Author(s):  
Yurii V. Sorokin ◽  
Boris A. Kuzyakov
Keyword(s):  
High Pressure ◽  
High Power ◽  
Ir Radiation ◽  
Aquatic Medium

High-power, high-pressure, discharge-heated copper vapor laser

1979 ◽  
Vol 30 (1) ◽  
pp. 70-74 ◽  
Author(s):  
I. Smilanski ◽  
G. Erez ◽  
A. Kerman ◽  
L.A. Levin
Keyword(s):  
High Pressure ◽  
High Power ◽  
Copper Vapor Laser ◽  
Vapor Laser ◽  
Copper Vapor ◽  
Pressure Discharge ◽  
High Pressure Discharge

scholarly journals HIGH POWER CONTINUOUSLY TUNABLE FAR INFRARED RAMAN NH3 LASER PUMPED USING A HIGH PRESSURE TE CO2 LASER

1988 ◽  
Vol 37 (3) ◽  
pp. 424
Author(s):  
ZHU WEN-SEN ◽  
B. K. DEKA ◽  
J. R. IZATT
Keyword(s):  
High Pressure ◽  
Co2 Laser ◽  
High Power ◽  
Far Infrared

High-Power Faraday Isolator for Mid-IR Radiation Based on ZnSe Polycrystals

2020 ◽  
Author(s):  
E.A. Mironov ◽  
O.V. Palashov ◽  
I.L. Snetkov ◽  
S.S. Balabanov
Keyword(s):  
High Power ◽  
Ir Radiation ◽  
Faraday Isolator

scholarly journals A New Storage-Ring Light Source

2015 ◽  
Vol 30 (22) ◽  
pp. 1530051 ◽  
Author(s):  
Alex Chao
Keyword(s):  
Steady State ◽  
Storage Ring ◽  
High Power ◽  
Photon Radiation ◽  
Molecular Physics ◽  
Ir Radiation ◽  
Power Sources ◽  
Atomic And Molecular Physics ◽  
Photon Source ◽  
Proof Of Principle

A recently proposed technique in storage ring accelerators is applied to provide potential high-power sources of photon radiation. The technique is based on the steady-state microbunching (SSMB) mechanism. As examples of this application, one may consider a high-power DUV photon source for research in atomic and molecular physics or a high-power EUV radiation source for industrial lithography. A less challenging proof-of-principle test to produce IR radiation using an existing storage ring is also considered.

Electronic and Optoelectronic Devices Based on GaN-AIGaN Heterostructures

1994 ◽  
Vol 339 ◽  
Author(s):  
M. Asif Khan ◽  
J. N. Kuznia ◽  
S. Krishnankutty ◽  
R. A. Skogman ◽  
D. T. Olson ◽  
...  
Keyword(s):  
Solid State ◽  
Data Storage ◽  
High Power ◽  
Oil And Gas ◽  
Optical Data Storage ◽  
Optical Data ◽  
Future Research ◽  
Material System ◽  
Ir Radiation ◽  
Processing Technologies

ABSTRACTAvailability of optoelectronic components operating in the U V-Visible part of the spectrum opens several exciting and important system applications. Solid state ultraviolet and blue-green lasers can increase the optical data storage density of CDROM/WORM and magneto-optical disks by a factor of four. They are also ideally suited for environmental pollutant identification and monitoring. On the other hand, solid state ultraviolet detectors that do not respond to visible or IR radiation are highly desirable for various commercial systems. These include medical imaging, industrial boiler systems, fire/flame safeguard systems around oil and gas installations and several military applications. A key requirement for these ultraviolet laser and sensor devices is the availability of a semiconductor material system with high quality controlled doping and fabrication technology.AlxGa1−xN and InxGa1−xN for which the direct bandgap can be tailored from the visible to the deep UV is such a material system. Ours and several other research groups (nationally and internationally) have been developing AlxGa1−xN materials and processing technologies over the past several years. Recently, by employing innovative approaches, significant advances have been made in heteroepitaxy of AlxGa1−xN on sapphire substrates. Also, controlled n and p-type doping has been achieved. Several high performance devices that form the basis of exciting future research have been demonstrated. These include high responsivity visible blind ultraviolet sensors, basic transistor structures and high power blue light emitting diodes. These pave the way for future research leading to exciting products such as blue-green lasers and UV-imaging arrays. The demonstrated transistor structures are foundation for building AlxGa1−xN -GaN based high power, high frequency and high temperature electronic components. In this paper, we will summarize some of our recent work and reflect on the potential and the issues in AlxGa1−xN-InxGa1−xN based device development.

A New High Pressure Cell for Infrared Reflection Spectroscopy

1998 ◽  
Vol 6 (A) ◽  
pp. A141-A143
Author(s):  
A.H. Abdullah ◽  
W.F. Sherman
Keyword(s):  
High Pressure ◽  
Zinc Sulphide ◽  
Ammonium Bromide ◽  
High Pressure Cell ◽  
Ir Radiation ◽  
Pressure Cell ◽  
Infrared Reflection ◽  
Ir Reflection Spectra ◽  
Infrared Reflection Spectroscopy ◽  
Work Up

This paper describes a new high pressure cell which was designed to work up to a pressure of about 8 kbar. A study of phase transitions of ammonium bromide and ammonium iodide using the infrared (IR) reflection spectra in the range from 1000 cm−1 to 1700 cm−1 was utilized to check the validity of measurements made with this cell. The incident IR radiation entered the pressure cell through a zinc sulphide window. The obtained data agrees very well with the established data for the phase transition of ammonium bromide and iodide.

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