Astigmatism and beam quality of high-brightness tapered diode lasers

2004 ◽  
Author(s):  
Marc T. Kelemen ◽  
Juergen Weber ◽  
Senta Kallenbach ◽  
Christian Pfahler ◽  
Michael Mikulla ◽  
...  
Keyword(s):  
Beam Quality ◽  
Diode Lasers ◽  
High Brightness

Methods for improving the beam quality of high-power diode lasers

1999 ◽  
Author(s):  
Volker Raab ◽  
Martin Ostermeyer ◽  
Ralf Menzel
Keyword(s):  
High Power ◽  
Beam Quality ◽  
Diode Lasers ◽  
Power Diode

HIGH BRIGHTNESS BEAMS — APPLICATIONS TO FREE-ELECTRON LASERS

2007 ◽  
Vol 22 (22) ◽  
pp. 3912-3924
Author(s):  
SVEN REICHE
Keyword(s):  
Free Electron ◽  
Beam Quality ◽  
Beam Parameter ◽  
Free Electron Lasers ◽  
High Quality ◽  
High Brightness ◽  
Radiation Sources ◽  
Beam Parameters ◽  
The Impact

Free-Electron Lasers as high-brilliance radiation sources, rely on a high quality of the electron beam driving the FEL process. The amount of energy, transferred from the electrons to the radiation field, and thus the efficiency of the FEL depends on the provided beam parameters. The presentation discusses the impact of various beam parameter and how current designs of FEL injector try to accomplish the demands on the beam quality for reaching saturation.

High-power 808-nm tapered diode lasers with nearly diffraction-limited beam quality of M/sup 2/=1.9 at P=4.4 W

2006 ◽  
Vol 18 (4) ◽  
pp. 601-603 ◽  
Author(s):  
F. Dittmar ◽  
B. Sumpf ◽  
J. Fricke ◽  
G. Erbert ◽  
G. Trankle
Keyword(s):  
High Power ◽  
Beam Quality ◽  
Diode Lasers

Methods for improving the beam quality of high-power diode lasers

2000 ◽  
Author(s):  
Volker Raab ◽  
Martin Ostermeyer ◽  
Ralf Menzel
Keyword(s):  
High Power ◽  
Beam Quality ◽  
Diode Lasers ◽  
Power Diode

Assessing the influence of the vertical epitaxial layer design on the lateral beam quality of high-power broad area diode lasers

2016 ◽  
Author(s):  
M. Winterfeldt ◽  
J. Rieprich ◽  
S. Knigge ◽  
A. Maaßdorf ◽  
M. Hempel ◽  
...  
Keyword(s):  
Epitaxial Layer ◽  
High Power ◽  
Beam Quality ◽  
Diode Lasers ◽  
Broad Area

High-brightness 635nm tapered diode lasers with optimized index guiding

2010 ◽  
Author(s):  
D. Feise ◽  
G. Blume ◽  
H. Dittrich ◽  
Chr. Kaspari ◽  
K. Paschke ◽  
...  
Keyword(s):  
Diode Lasers ◽  
High Brightness

scholarly journals 1178 J, 527 nm near diffraction limited laser based on a complete closed-loop adaptive optics controlled off-axis multi-pass amplification laser system

2021 ◽  
Vol 9 ◽  
Author(s):  
Deen Wang ◽  
Xin Zhang ◽  
Wanjun Dai ◽  
Ying Yang ◽  
Xuewei Deng ◽  
...  
Keyword(s):  
Laser Beam ◽  
Adaptive Optics ◽  
Closed Loop ◽  
Focal Spot ◽  
Beam Quality ◽  
Laser System ◽  
Diffraction Limit ◽  
Kdp Crystal ◽  
Main Amplifier

Abstract A 1178 J near diffraction limited 527 nm laser is realized in a complete closed-loop adaptive optics (AO) controlled off-axis multi-pass amplification laser system. Generated from a fiber laser and amplified by the pre-amplifier and the main amplifier, a 1053 nm laser beam with the energy of 1900 J is obtained and converted into a 527 nm laser beam by a KDP crystal with 62% conversion efficiency, 1178 J and beam quality of 7.93 times the diffraction limit (DL). By using a complete closed-loop AO configuration, the static and dynamic wavefront distortions of the laser system are measured and compensated. After correction, the diameter of the circle enclosing 80% energy is improved remarkably from 7.93DL to 1.29DL. The focal spot is highly concentrated and the 1178 J, 527 nm near diffraction limited laser is achieved.

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