Excess noise characteristics of single heterojunction AlxGa1-xAs-GaAs avalanche photodiodes

2004 ◽  
Author(s):  
Christopher Groves ◽  
John P. R. David ◽  
Peter N. Robson ◽  
Graham J. Rees
Keyword(s):  
Avalanche Photodiodes ◽  
Excess Noise ◽  
Noise Characteristics

Multiple Quantum Barrier Nano-avalanche Photodiodes - Part I: Spectral Response

2019 ◽  
Vol 9 (2) ◽  
pp. 172-184
Author(s):  
Somrita Ghosh ◽  
Aritra Acharyya
Keyword(s):  
Optical Pulse ◽  
Near Infrared ◽  
Spectral Response ◽  
Avalanche Photodiodes ◽  
Operating Conditions ◽  
Excess Noise ◽  
Multiple Quantum ◽  
Material System ◽  
Frequency Responses ◽  
Noise Characteristics

Background: The spectral response of Multiple Quantum Barrier (MQB) nano-scale avalanche photodiodes (APDs) based on Si~3C-SiC material system shows considerable responsivity of the device within a very wide wavelength range which includes some portion of Ultra- Violet (UV) spectrum (200- 90 nm), visible spectrum (390-770 nm), near-infrared (700-1400 nm), short-wavelength infrared (1400-3000 nm) and mid-infrared (3000-4000 nm) wavelengths. It has already been concluded from preceding studies that Si~3C-SiC MQB APDs shows better spectral response and excess noise characteristics as compared to equivalent conventional APDs based on Si. Moreover, the superiority of the illumination through p+-side (ITPS) structure has been observed among two probable optical illumination configurations such as illumination through n+- side (ITNS) and illumination through p+-side (ITPS) structures. Methods: In this paper, the time and frequency responses of Si~3C-SiC MQB APDs have been investigated. A very narrow rectangular pulse of pulse-width of 0.4 ps has been used as the input optical pulse having 850 nm wavelength incident on the p+-side of the MQB APD structures (i.e. ITPS is considered here) and corresponding current responses have been calculated by using a rigorous simulation method developed by the authors; finally the frequency responses of the devices are obtained via the Fourier transform of the corresponding pulse current responses in time domain. Results: The width of the current responses are limited to 4.7 and 3.1 ps in Si nano-APD and Si~3C-SiC MQB (consisting of five quantum barriers) nano-APD respectively for the input optical pulse of width 0.4 ps of 850 nm wavelength. On the other hand, the 3 dB upper cut-off frequencies of the above-mentioned diodes are obtained to be 68.63 and 82.64 GHz respectively. Conclusion: Simulation results show that MQB nano-APDs possess significantly faster time response and wider frequency response as compared to the flat Si nano-APDs under similar operating conditions.

scholarly journals Excess noise characteristics of Al/sub 0.8/Ga/sub 0.2/As avalanche photodiodes

2002 ◽  
Vol 14 (4) ◽  
pp. 522-524 ◽  
Author(s):  
B.K. Ng ◽  
J.P.R. David ◽  
R.C. Tozer ◽  
M. Hopkinson ◽  
G. Hill ◽  
...  
Keyword(s):  
Avalanche Photodiodes ◽  
Excess Noise ◽  
Noise Characteristics

Multiple Quantum Barrier Nano-avalanche Photodiodes - Part II: Excess Noise Characteristics

2019 ◽  
Vol 9 (2) ◽  
pp. 185-191
Author(s):  
Somrita Ghosh ◽  
Aritra Acharyya
Keyword(s):  
Avalanche Photodiodes ◽  
Noise Factor ◽  
Excess Noise ◽  
Multiple Quantum ◽  
Noise Performance ◽  
Excess Noise Factor ◽  
Simulation Methodology ◽  
Noise Characteristics ◽  
Good Agreement ◽  
Ionization Rates

Background: Excess noise characteristics of Multiple Quantum Barrier (MQB) nanoscale avalanche photodiodes (APDs) based on Si~3C-SiC heterostructures have been studied in this part of the paper. The multiplication gain and Excess Noise Factor (ENF) of the MQB APDs have been calculated by varying the number of Quantum Barriers (QBs). Methods: The numerically calculated ENF values of MQB APDs have been compared with the ENF of Si flat conventional APDs of similar dimensions and it is observed that the use of QBs leads to significant reduction in ENF of the APDs under similar biasing and illumination conditions. Results: The enhanced ratio of hole to electron ionization rates in MQB structures as compared to the bulk Si APD structure has been found to be the primary cause of improvement in the noise performance of the MQB nano-APDs. Conclusion: Finally, the numerically calculated ENF of Si flat APD has been compared with the experimentally measured ENF of a commercially available Si APD and those are found to be in good agreement; this comparison validates the simulation methodology adopted by the authors in this paper.

scholarly journals Multiplication and excess noise characteristics of thin 4H-SiC UV avalanche photodiodes

2002 ◽  
Vol 14 (9) ◽  
pp. 1342-1344 ◽  
Author(s):  
B.K. Ng ◽  
F. Yan ◽  
J.P.R. David ◽  
R.C. Tozer ◽  
G.J. Rees ◽  
...  
Keyword(s):  
Avalanche Photodiodes ◽  
Excess Noise ◽  
Noise Characteristics

Excess noise measurement in avalanche photodiodes using a transimpedance amplifier front-end

2006 ◽  
Vol 17 (7) ◽  
pp. 1941-1946 ◽  
Author(s):  
K S Lau ◽  
C H Tan ◽  
B K Ng ◽  
K F Li ◽  
R C Tozer ◽  
...  
Keyword(s):  
Avalanche Photodiodes ◽  
Noise Measurement ◽  
Excess Noise ◽  
Transimpedance Amplifier ◽  
Front End

Determination of the excess noise of avalanche photodiodes integrated in 0.35-μm CMOS technologies

2018 ◽  
Vol 57 (04) ◽  
pp. 1 ◽  
Author(s):  
Tomislav Jukić ◽  
Paul Brandl ◽  
Horst Zimmermann
Keyword(s):  
Avalanche Photodiodes ◽  
Excess Noise
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