Piezoresistive pressure sensors in CVD diamond for high-temperature applications

2003 ◽  
Author(s):  
Ralf Otterbach ◽  
Ulrich Hilleringmann
Keyword(s):  
High Temperature ◽  
Pressure Sensors ◽  
Cvd Diamond ◽  
Piezoresistive Pressure Sensors ◽  
Temperature Applications

scholarly journals Fabrication of All-SiC Fiber-Optic Pressure Sensors for High-Temperature Applications

Sensors ◽  
2016 ◽  
Vol 16 (10) ◽  
pp. 1660 ◽  
Author(s):  
Yonggang Jiang ◽  
Jian Li ◽  
Zhiwen Zhou ◽  
Xinggang Jiang ◽  
Deyuan Zhang
Keyword(s):  
High Temperature ◽  
Fiber Optic ◽  
Pressure Sensors ◽  
Sic Fiber ◽  
Temperature Applications

scholarly journals Hermeticity Analysis on SiC Cavity Structure for All-SiC Piezoresistive Pressure Sensor

Sensors ◽  
2021 ◽  
Vol 21 (2) ◽  
pp. 379
Author(s):  
Baohua Tian ◽  
Haiping Shang ◽  
Lihuan Zhao ◽  
Dahai Wang ◽  
Yang Liu ◽  
...  
Keyword(s):  
High Temperature ◽  
Pressure Sensor ◽  
Pressure Sensors ◽  
Absolute Pressure ◽  
Microstructure Observation ◽  
Thermal Expansion Coefficients ◽  
Piezoresistive Pressure Sensor ◽  
Cavity Structure ◽  
Sic Wafer ◽  
Temperature Applications

The hermeticity performance of the cavity structure has an impact on the long-term stability of absolute pressure sensors for high temperature applications. In this paper, a bare silicon carbide (SiC) wafer was bonded to a patterned SiC substrate with shallow grooves based on a room temperature direct bonding process to achieve a sealed cavity structure. Then the hermeticity analysis on the SiC cavity structure was performed. The microstructure observation demonstrates that the SiC wafers are tightly bonded and the cavities remain intact. Moreover, the tensile testing indicates that the tensile strength of bonding interface is ~8.01 MPa. Moreover, the quantitative analysis on the airtightness of cavity structure through leakage detection shows a helium leak rate of ~1.3 × 10−10 Pa⋅m3/s, which satisfies the requirement of the specification in the MIL-STD-883H. The cavity structure can also avoid an undesirable deep etching process and the problem caused by the mismatch of thermal expansion coefficients, which can be potentially further developed into an all-SiC piezoresistive pressure sensor employable for high temperature applications.

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