Thermogalvanic laser recording and reading data storage device

2003 ◽  
Author(s):  
Alexander M. Gorovoi ◽  
Alexander N. Malov
Keyword(s):  
Data Storage ◽  
Storage Device

Perangkat keras komputer

2020 ◽  
Author(s):  
Roudati jannah
Keyword(s):  
Data Storage ◽  
Central Processing Unit ◽  
External Memory ◽  
Storage Device ◽  
Input Device ◽  
Processing Unit ◽  
Central Processing ◽  
Output Device

Perangkat keras komputer adalah bagian dari sistem komputer sebagai perangkat yang dapat diraba, dilihat secara fisik, dan bertindak untuk menjalankan instruksi dari perangkat lunak (software). Perangkat keras komputer juga disebut dengan hardware. Hardware berperan secara menyeluruh terhadap kinerja suatu sistem komputer. Prinsipnya sistem komputer selalu memiliki perangkat keras masukan (input/input device system) – perangkat keras premprosesan (processing/central processing unit) – perangkat keras luaran (output/output device system) – perangkat tambahan yang sifatnya opsional (peripheral) dan tempat penyimpanan data (storage device system/external memory).

Perangkat lunak komputer

2020 ◽  
Author(s):  
Intan khadijah simatupang
Keyword(s):  
Data Storage ◽  
Central Processing Unit ◽  
External Memory ◽  
Storage Device ◽  
Input Device ◽  
Processing Unit ◽  
Central Processing ◽  
Output Device

Komputer adalah serangkaian mesin elektronik yang terdiri dari jutaan komponen yang dapat saling bekerja sama, serta membentuk sebuah sistem kerja yang rapi dan teliti. Sistem ini kemudian digunakan untuk dapat melaksanakan pekerjaan secara otomatis, berdasarkan instruksi (program) yang diberikan kepadanya. Istilah Hardware computer atau perangkat keras komputer, merupakan benda yang secara fisik dapat dipegang, dipindahkan dan dilihat. Software komputer atau perangkat lunak komputer merupakan kumpulan instruksi (program/prosedur) untuk dapat melaksanakan pekerjaan secara otomatis dengan cara mengolah atau memproses kumpulan instruksi (data) yang diberikan. Pada prinsipnya sistem komputer selalu memiliki perangkat keras masukan (input/input device system) – perangkat keras pemprosesan (processing/ central processing unit) – perangkat keras keluaran (output/output device system), perangkat tambahan yang sifatnya opsional (peripheral) dan tempat penyimpanan data (Storage device system/external memory).

Analysis of 6T SRAM Cell in Different Technologies

2017 ◽  
Vol MCSP2017 (01) ◽  
pp. 7-10 ◽  
Author(s):  
Subhashree Rath ◽  
Siba Kumar Panda
Keyword(s):  
Low Power ◽  
Data Storage ◽  
Low Voltage ◽  
Random Access ◽  
Storage Device ◽  
Cmos Process ◽  
Process Technology ◽  
Digital Devices ◽  
Noise Margin ◽  
Sram Cell

Static random access memory (SRAM) is an important component of embedded cache memory of handheld digital devices. SRAM has become major data storage device due to its large storage density and less time to access. Exponential growth of low power digital devices has raised the demand of low voltage low power SRAM. This paper presents design and implementation of 6T SRAM cell in 180 nm, 90 nm and 45 nm standard CMOS process technology. The simulation has been done in Cadence Virtuoso environment. The performance analysis of SRAM cell has been evaluated in terms of delay, power and static noise margin (SNM).

scholarly journals The Route for Ultra-High Recording Density Using Probe-Based Data Storage Device

NANO ◽  
2015 ◽  
Vol 10 (08) ◽  
pp. 1550118 ◽  
Author(s):  
Lei Wang ◽  
Jing Wen ◽  
CiHui Yang ◽  
Shan Gai ◽  
YuanXiu Peng
Keyword(s):  
Phase Change ◽  
Data Storage ◽  
Electrical Contact ◽  
Crystal Nucleation ◽  
Access Time ◽  
Storage Device ◽  
Electrical Contact Resistance ◽  
Low Energy Consumption ◽  
Modeling Techniques ◽  
Second Period

Phase-change probe memory using Ge2Sb2Te5 has been considered as one of the promising candidates as next-generation data storage device due to its ultra-high density, low energy consumption, short access time and long retention time. In order to utmostly mimic the practical setup, and thus fully explore the potential of phase-change probe memory for 10 Tbit/in2 target, some advanced modeling techniques that include threshold-switching, electrical contact resistance, thermal boundary resistance and crystal nucleation-growth, are introduced into the already-established electrothermal model to simulate the write and read performance of phase-change probe memory using an optimal media stack design. The resulting predictions clearly demonstrate the capability of phase-change probe memory to record 10 Tbit/in2 density under pico Joule energy within micro second period.

Electric field-modulated data storage in bilayer InSe

2017 ◽  
Vol 5 (46) ◽  
pp. 12228-12234 ◽  
Author(s):  
Xuhui Yang ◽  
Baisheng Sa ◽  
Hongbing Zhan ◽  
Zhimei Sun
Keyword(s):  
Electric Field ◽  
Data Storage ◽  
Storage Device ◽  
Vertical Electric Field

A vertical electric field-modulated data storage device based on bilayer InSe.

Germanene/GaGeTe heterostructure: a promising electric-field induced data storage device with high carrier mobility

2020 ◽  
Vol 22 (9) ◽  
pp. 5163-5169 ◽  
Author(s):  
Fu-Bao Zheng ◽  
Liang Zhang ◽  
Jin Zhang ◽  
Pei-ji Wang ◽  
Chang-Wen Zhang
Keyword(s):  
Electric Field ◽  
Band Gap ◽  
Data Storage ◽  
Carrier Mobility ◽  
Electronic Devices ◽  
Storage Device ◽  
New Type ◽  
High Carrier Mobility ◽  
High Carrier ◽  
Opening Up

Opening up a band gap without lowering high carrier mobility in germanene and finding suitable substrate materials to form van der Waals heterostructures have recently emerged as an intriguing way of designing a new type of electronic devices.

Generation of Fuzzy Rules and Learning Algorithms for Servo Control in Holographic Data Storage System

2013 ◽  
Author(s):  
Jang Hyun Kim ◽  
Wooyoung Jeong ◽  
Hyunseok Yang
Keyword(s):  
Data Storage ◽  
Storage System ◽  
Optical Memory ◽  
Information Storage ◽  
Servo Control ◽  
Fuzzy Rules ◽  
Storage Device ◽  
Holographic Data Storage ◽  
Data Storage System ◽  
System 1

Today many media of information storage device are formed as disks. Hence, next generation removable data storage media are shaped as disk types too. The holographic data storage system also uses a disk type photopolymer media. And then, holographic data storage system is most advanced optical memory system. Tracking servo and tilt servo control are very important research in holographic data storage system. In this paper, we propose intelligent servo control by fuzzy rules in holographic data storage system. Hence, we have found pattern of tilt servo control in holographic data storage system through fuzzy system. Fuzzy rules were generated by Genetic algorithm for controlling tilt servo. Therefore, we control tilt servo using fuzzy rules in holographic data storage system. Consequently, practical pattern of tilt servo control was found by intelligence algorithm in holographic data storage system.[1]

Nondestructive up-conversion readout in Er/Yb co-doped Na0.5Bi2.5Nb2O9-based optical storage materials for optical data storage device applications

2017 ◽  
Vol 5 (15) ◽  
pp. 3838-3847 ◽  
Author(s):  
Qiwei Zhang ◽  
Shuangshuang Yue ◽  
Haiqin Sun ◽  
Xusheng Wang ◽  
Xihong Hao ◽  
...  
Keyword(s):  
Data Storage ◽  
Optical Data Storage ◽  
Photon Absorption ◽  
Optical Data ◽  
Storage Device ◽  
Two Photon Absorption ◽  
Two Photon ◽  
Device Applications ◽  
Co Doped ◽  
Absorption Mode

Er/Yb co-doped NBN photochromics exhibit excellent luminescence readout capability by using a two-photon absorption mode with extremely low destruction on information recording.

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