Improvement in light-output power of InGaN/GaN light-emitting diodes by p-GaN surface modification using self-assembled metal clusters

2004 ◽  
Author(s):  
Eun-Jeong Kang ◽  
Chul Huh ◽  
S.-H. Lee ◽  
J.-J. Jung ◽  
Song-Jae Lee ◽  
...  
Keyword(s):  
Surface Modification ◽  
Output Power ◽  
Light Emitting Diodes ◽  
Metal Clusters ◽  
Light Output ◽  
Light Output Power ◽  
Light Emitting ◽  
Self Assembled

Improved Light Output Power of GaN-Based Light-Emitting Diodes Using Double Photonic Quasi-Crystal Patterns

2009 ◽  
Vol 30 (11) ◽  
pp. 1152-1154 ◽  
Author(s):  
Hung-Wen Huang ◽  
Chung-Hsiang Lin ◽  
Zhi-Kai Huang ◽  
Kang-Yuan Lee ◽  
Chang-Chin Yu ◽  
...  
Keyword(s):  
Output Power ◽  
Light Emitting Diodes ◽  
Light Output ◽  
Light Output Power ◽  
Light Emitting

Electroluminescence Properties of Eu-doped GaN-based Light-emitting Diodes Grown by Organometallic Vapor Phase Epitaxy

2011 ◽  
Vol 1342 ◽  
Author(s):  
Atsushi Nishikawa ◽  
Naoki Furukawa ◽  
Dong-gun Lee ◽  
Kosuke Kawabata ◽  
Takanori Matsuno ◽  
...  
Keyword(s):  
Layer Thickness ◽  
Output Power ◽  
Active Layer ◽  
Vapor Phase ◽  
Light Emitting Diodes ◽  
Light Output ◽  
Active Layer Thickness ◽  
Organometallic Vapor Phase Epitaxy ◽  
Light Output Power ◽  
Light Emitting

ABSTRACTWe investigated the electroluminescence (EL) properties of Eu-doped GaN-based light-emitting diodes (LEDs) grown by organometallic vapor phase epitaxy (OMVPE). The thickness of the active layer was varied to increase the light output power. With increasing the active layer thickness, the light output power monotonically increased. The maximum light output power of 50 μW was obtained for an active layer thickness of 900 nm with an injected current of 20 mA, which is the highest value ever reported. The corresponding external quantum efficiency was 0.12%. The applied voltage for the LED operation also increased with the active layer thickness due to an increase in the resistance of the LED. Therefore, in terms of power efficiency, the optimized active layer thickness was around 600 nm. These results indicate that the optimization of the LED structure would effectively improve the luminescence properties.

Ni-assisted Fabrication of GaN Based Surface Nano-textured Light Emitting Diodes for Improved Light Output Power

2015 ◽  
Vol 15 (4) ◽  
pp. 454-461 ◽  
Author(s):  
Mumta Hena Mustary ◽  
Beo Deul Ryu ◽  
Min Han ◽  
Jong Han Yang ◽  
Volodymyr V. Lysak ◽  
...  
Keyword(s):  
Output Power ◽  
Light Emitting Diodes ◽  
Light Output ◽  
Light Output Power ◽  
Light Emitting

Improved Light Output Power of GaN-based Light Emitting Diodes using Double Photonic Quasi-Crystal Patterned

2009 ◽  
Author(s):  
J. K. Huang ◽  
H. W. Huang ◽  
C. H. Lin ◽  
K. Y. Lee ◽  
C. C. Yu ◽  
...  
Keyword(s):  
Output Power ◽  
Light Emitting Diodes ◽  
Light Output ◽  
Light Output Power ◽  
Light Emitting
Sign in / Sign up

Export Citation Format

Share Document