Optical and transport properties of p-type heterojunctions with lateral surface superlattice in perpendicular magnetic field

2002 ◽  
Author(s):  
V. Y. Demikhovskii ◽  
D. V. Khomitsky
Keyword(s):  
Magnetic Field ◽  
Transport Properties ◽  
Lateral Surface ◽  
Perpendicular Magnetic Field ◽  
P Type

TRANSPORT PROPERTIES OF TUNNEL-COUPLED ONE-DIMENSIONAL CHANNELS FROM AN ELECTRON BILAYER SYSTEM IN PERPENDICULAR MAGNETIC FIELD

2009 ◽  
Vol 23 (12n13) ◽  
pp. 2910-2914 ◽  
Author(s):  
S. S. BUCHHOLZ ◽  
S. F. FISCHER ◽  
U. KUNZE ◽  
D. SCHUH ◽  
G. ABSTREITER
Keyword(s):  
Magnetic Field ◽  
Transport Properties ◽  
Quantum Hall ◽  
Quantum Point Contacts ◽  
Perpendicular Magnetic Field ◽  
Point Contacts ◽  
One Dimensional ◽  
Bilayer System ◽  
Quantum Point ◽  
Landau Level Mixing

In a tunnel coupled GaAs / AlGaAs electron bilayer system (BLS), we compare transport measurements of 1D quantum Hall (QH) edge channels with lithographically defined quantum point contacts (QPCs). The electron densities in both systems can be varied by a top-gate. In a perpendicular magnetic field, Landau level mixing is observed in the QH regime, and indications of crossings of spin split QPC subbands are detected.

scholarly journals Manipulating the Raman scattering rotation via magnetic field in an MoS2 monolayer

RSC Advances ◽  
2021 ◽  
Vol 11 (7) ◽  
pp. 4035-4041
Author(s):  
Yi Wan ◽  
Xing Cheng ◽  
Yanfang Li ◽  
Yaqian Wang ◽  
Yongping Du ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Raman Scattering ◽  
Perpendicular Magnetic Field ◽  
Mos2 Monolayer

Herein, we demonstrated that a perpendicular magnetic field could produce a dramatic scattering rotation for the vibrations in MoS2 monolayers.

scholarly journals Effects of Perpendicular Magnetic Field Annealing on the Structural and Magnetic Properties of [Co/Ni]2/PtMn Thin Films

2021 ◽  
Vol 7 (3) ◽  
pp. 38
Author(s):  
Roshni Yadav ◽  
Chun-Hsien Wu ◽  
I-Fen Huang ◽  
Xu Li ◽  
Te-Ho Wu ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Thin Films ◽  
Magnetic Properties ◽  
Photoelectron Spectroscopy ◽  
Perpendicular Magnetic Field ◽  
Face Centered Cubic ◽  
Lattice Image ◽  
X Ray ◽  
Field Annealing ◽  
Face Centered

In this study, [Co/Ni]2/PtMn thin films with different PtMn thicknesses (2.7 to 32.4 nm) were prepared on Si/SiO2 substrates. The post-deposition perpendicular magnetic field annealing (MFA) processes were carried out to modify the structures and magnetic properties. The MFA process also induced strong interlayer diffusion, rendering a less sharp interface between Co and Ni and PtMn layers. The transmission electron microscopy (TEM) lattice image analysis has shown that the films consisted of face-centered tetragonal (fct) PtMn (ordered by MFA), body-centered cubic (bcc) NiMn (due to intermixing), in addition to face-centered cubic (fcc) Co, Ni, and PtMn phases. The peak shift (2-theta from 39.9° to 40.3°) in X-ray diffraction spectra also confirmed the structural transition from fcc PtMn to fct PtMn after MFA, in agreement with those obtained by lattice images in TEM. The interdiffusion induced by MFA was also evidenced by the depth profile of X-ray photoelectron spectroscopy (XPS). Further, the magnetic properties measured by vibrating sample magnetometry (VSM) have shown an increased coercivity in MFA-treated samples. This is attributed to the presence of ordered fct PtMn, and NiMn phases exchange coupled to the ferromagnetic [Co/Ni]2 layers. The vertical shift (Mshift = −0.03 memu) of the hysteresis loops is ascribed to the pinned spins resulting from perpendicular MFA processes.

Electrical transport properties of FeSe single crystal under high magnetic field

2021 ◽  
Vol 64 (8) ◽  
Author(s):  
HongHui Wang ◽  
ZhaoHui Cheng ◽  
MengZhu Shi ◽  
DongHui Ma ◽  
WeiZhuang Zhuo ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Single Crystal ◽  
Transport Properties ◽  
High Magnetic Field ◽  
Electrical Transport ◽  
Electrical Transport Properties

Dynamic resistance measurement in a YBCO wire under perpendicular magnetic field at various operating temperatures

2019 ◽  
Vol 126 (24) ◽  
pp. 243904 ◽  
Author(s):  
Yanchao Liu ◽  
Zhenan Jiang ◽  
G. Sidorov ◽  
C. W. Bumby ◽  
R. A. Badcock ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Resistance Measurement ◽  
Dynamic Resistance ◽  
Perpendicular Magnetic Field ◽  
Operating Temperatures

TRANSPARENCY OF NARROW CONSTRICTIONS IN A GRAPHENE SINGLE ELECTRON TRANSISTOR

2009 ◽  
Vol 23 (12n13) ◽  
pp. 2647-2654 ◽  
Author(s):  
C. STAMPFER ◽  
E. SCHURTENBERGER ◽  
F. MOLITOR ◽  
J. GÜTTINGER ◽  
T. IHN ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Electric Fields ◽  
Drain Current ◽  
Single Electron ◽  
Single Electron Transistor ◽  
Perpendicular Magnetic Field ◽  
Current Saturation ◽  
Tunnel Barriers ◽  
Graphene Island ◽  
Charging Energy

We report on electronic transport experiments on a graphene single electron transistor as function of a perpendicular magnetic field. The device, which consists of a graphene island connected to source and drain electrodes via two narrow graphene constrictions is electronically characterized and the device exhibits a characteristic charging energy of approx. 3.5 meV. We investigate the homogeneity of the two graphene "tunnel" barriers connecting the single electron transistor to source and drain contacts as function of laterally applied electric fields, which are also used to electrostatically tune the overall device. Further, we focus on the barrier transparency as function of an applied perpendicular magnetic field and we find an increase of transparency for increasing magnetic field and a source-drain current saturation for magnetic fields exceeding 5 T.

The Study of p-n and Schottky Junction for Magnetodiode

2011 ◽  
Vol 378-379 ◽  
pp. 663-667 ◽  
Author(s):  
Toempong Phetchakul ◽  
Wittaya Luanatikomkul ◽  
Chana Leepattarapongpan ◽  
E. Chaowicharat ◽  
Putapon Pengpad ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Electrical Properties ◽  
Simulation Model ◽  
Hall Effect ◽  
Schottky Junction ◽  
Field Sensitivity ◽  
Field Response ◽  
Type Semiconductor ◽  
Simulation Results ◽  
P Type

This paper presents the simulation model of Dual Magnetodiode and Dual Schottky Magnetodiode using Sentaurus TCAD to simulate the virtual structure of magneto device and apply Hall Effect to measure magnetic field response of the device. Firstly, we use the program to simulate the magnetodiode with p-type semiconductor and aluminum anode and measure electrical properties and magnetic field sensitivity. Simulation results show that sensitivity of Dual Schottky magnetodiode is higher than that of Dual magnetodiode.

scholarly journals Study of anisotropic thermal conductivity in textured thermoelectric alloys by Raman spectroscopy

RSC Advances ◽  
2021 ◽  
Vol 11 (39) ◽  
pp. 24456-24465
Author(s):  
Rapaka S. C. Bose ◽  
K. Ramesh
Keyword(s):  
Crystal Structure ◽  
Thermal Conductivity ◽  
Raman Spectroscopy ◽  
Transport Properties ◽  
Thermal Transport ◽  
Layered Crystal ◽  
Layered Crystal Structure ◽  
Thermal Transport Properties ◽  
Anisotropic Thermal Conductivity ◽  
P Type

Polycrystalline p-type Sb1.5Bi0.5Te3 (SBT) and n-type Bi2Te2.7Se0.3 (BTS) compounds possessing layered crystal structure show anisotropic electronic and thermal transport properties.

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