Dependence of recording density and capacity of disk-type photopolymer high-density holographic storage on recording angles

2003 ◽  
Author(s):  
Mingju Huang ◽  
Huawen Yao ◽  
Zhongyu Chen ◽  
Lisong Hou ◽  
Fuxi Gan
Keyword(s):  
High Density ◽  
Holographic Storage ◽  
Recording Density

High-density large-capacity nonvolatile holographic storage in photorefractive crystals

2005 ◽  
Author(s):  
Shiquan Tao ◽  
Zhuqing Jiang ◽  
Wei Yuan ◽  
Yuhong Wan ◽  
Ye Wang ◽  
...  
Keyword(s):  
High Density ◽  
Holographic Storage ◽  
Photorefractive Crystals ◽  
Large Capacity

Investigation of Graph-Based Detection in Iterative Decoding for Bit-Patterned Media Recording

2014 ◽  
Vol 979 ◽  
pp. 58-61
Author(s):  
Piya Kovintavewat
Keyword(s):  
Iterative Decoding ◽  
Intersymbol Interference ◽  
High Density ◽  
Soft Information ◽  
Experimental Results ◽  
Bit Patterned Media ◽  
Patterned Media ◽  
Recording Density ◽  
Moderate Complexity ◽  
Intertrack Interference

High-density bit-patterned media recording (BPMR) can be obtained by reducing the spacing between data bitislands in both the along-and across-track directions, thus leading to severe intersymbol interference (ISI) and intertrack interference (ITI) because of small bit and track pitches, respectively. Here, we propose to use the graph-based detector, instead of the trellis-based detector, in iterative decoding to combat the ISI and the ITI for a multi-head multi-track BPMR system. Specifically, the readback signal is sent to the graph-based detector before iteratively exchanging the soft information with a decoder. Experimental results indicate that at low to moderate complexity, the proposed scheme outperforms the existing schemes, especially at high recording density.

Novel speckle angular-shift multiplexing for high-density holographic storage

2000 ◽  
Author(s):  
Peikun Zhang ◽  
Qingsheng He ◽  
Guofan Jin ◽  
Minxian Wu ◽  
Yingbai Yan ◽  
...  
Keyword(s):  
High Density ◽  
Holographic Storage ◽  
Angular Shift

Cross-erasure noise in high-density holographic-storage systems

1997 ◽  
Vol 14 (5) ◽  
pp. 1187 ◽  
Author(s):  
Frederick Vachss ◽  
Ian McMichael ◽  
John Hong
Keyword(s):  
Storage Systems ◽  
High Density ◽  
Holographic Storage

High-density holographic storage in thin films

1994 ◽  
Author(s):  
Allen Pu ◽  
Kevin R. Curtis ◽  
Demetri Psaltis
Keyword(s):  
Thin Films ◽  
High Density ◽  
Holographic Storage

Planar defects in ordered (Ga,In)P

1988 ◽  
Vol 46 ◽  
pp. 902-903
Author(s):  
S. McKernan ◽  
C. B. Carter ◽  
D. Bour ◽  
J. R. Shealy
Keyword(s):  
Electron Diffraction ◽  
Vapor Phase ◽  
Growth Direction ◽  
High Density ◽  
Ordered Structure ◽  
Planar Defects ◽  
Diffraction Patterns ◽  
Ternary Semiconductors ◽  
Anion Species ◽  
Metallic Vapor

The growth of ternary III-V semiconductors by organo-metallic vapor phase epitaxy (OMVPE) is widely practiced. It has been generally assumed that the resulting structure is the same as that of the corresponding binary semiconductors, but with the two different cation or anion species randomly distributed on their appropriate sublattice sites. Recently several different ternary semiconductors including AlxGa1-xAs, Gaxln-1-xAs and Gaxln1-xP1-6 have been observed in ordered states. A common feature of these ordered compounds is that they contain a relatively high density of defects. This is evident in electron diffraction patterns from these materials where streaks, which are typically parallel to the growth direction, are associated with the extra reflections arising from the ordering. However, where the (Ga,ln)P epilayer is reasonably well ordered the streaking is extremely faint, and the intensity of the ordered spot at 1/2(111) is much greater than that at 1/2(111). In these cases it is possible to image relatively clearly many of the defects found in the ordered structure.

Quantitative defect studies in semiconductor TEM samples prepared by low angle ion milling

1995 ◽  
Vol 53 ◽  
pp. 512-513
Author(s):  
L. Mulestagno ◽  
J.C. Holzer ◽  
P. Fraundorf
Keyword(s):  
Sample Preparation ◽  
Milling Time ◽  
High Density ◽  
Low Density ◽  
Ion Milling ◽  
High Quality ◽  
Variable Angle ◽  
Major Disadvantage ◽  
Induced Defects

Due to the wealth of information, both analytical and structural that can be obtained from it TEM always has been a favorite tool for the analysis of process-induced defects in semiconductor wafers. The only major disadvantage has always been, that the volume under study in the TEM is relatively small, making it difficult to locate low density defects, and sample preparation is a somewhat lengthy procedure. This problem has been somewhat alleviated by the availability of efficient low angle milling.Using a PIPS® variable angle ion -mill, manufactured by Gatan, we have been consistently obtaining planar specimens with a high quality thin area in excess of 5 × 104 μm2 in about half an hour (milling time), which has made it possible to locate defects at lower densities, or, for defects of relatively high density, obtain information which is statistically more significant (table 1).

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