Nanopatterning by AFM nano-oxidation of thin aluminum layers as a tool for the prototyping of nanoelectromechanical systems

2003 ◽  
Author(s):  
Cristina Martin ◽  
Zachary Davis ◽  
Esko Forsen ◽  
Migdong Dong ◽  
Josep Montserrat ◽  
...  
2019 ◽  
Vol 95 (3) ◽  
pp. 62-67
Author(s):  
D.A. Volkov ◽  
◽  
Ye.V. Terenteva ◽  
S.A. Beznosyuk ◽  
◽  
...  

Nano Letters ◽  
2013 ◽  
Vol 13 (4) ◽  
pp. 1451-1456 ◽  
Author(s):  
T. Barois ◽  
A. Ayari ◽  
P. Vincent ◽  
S. Perisanu ◽  
P. Poncharal ◽  
...  

2016 ◽  
Author(s):  
Houman Jiang ◽  
Guomin Zhao ◽  
Minsun Chen ◽  
Xin Peng

PLoS ONE ◽  
2015 ◽  
Vol 10 (7) ◽  
pp. e0133479 ◽  
Author(s):  
Khaled Sayed Elbadawi Ramadan ◽  
Stephane Evoy

1984 ◽  
Vol 35 ◽  
Author(s):  
S. Williamson ◽  
G. Mourou ◽  
J.C.M. Li

ABSTRACTThe technique of picosecond electron diffraction is used to time resolve the laser-induced melting of thin aluminum films. It is observed that under rapid heating conditions, the long range order of the lattice subsists for lattice temperatures well above the equilibrium point, indicative of superheating. This superheating can be verified by directly measuring the lattice temperature. The collapse time of the long range order is measured and found to vary from 20 ps to several nanoseconds according to the degree of superheating. Two interpretations of the delayed melting are offered, based on the conventional nucleation and point defect theories. While the nucleation theory provides an initial nucleus size and concentration for melting to occur, the point defect theory offers a possible explanation for how the nuclei are originally formed.


2021 ◽  
Vol 56 (12) ◽  
pp. 7171-7230
Author(s):  
Orlando Auciello ◽  
Dean M. Aslam

AbstractA comprehensive review is presented on the advances achieved in past years on fundamental and applied materials science of diamond films and engineering to integrate them into new generations of microelectromechanical system (MEMS) and nanoelectromechanical systems (NEMS). Specifically, the review focuses on describing the fundamental science performed to develop thin film synthesis processes and the characterization of chemical, mechanical, tribological and electronic properties of microcrystalline diamond, nanocrystalline diamond and ultrananocrystalline diamond films technologies, and the research and development focused on the integration of the diamond films with other film-based materials. The review includes both theoretical and experimental work focused on optimizing the films synthesis and the resulting properties to achieve the best possible MEMS/NEMS devices performance to produce new generation of MEMS/NEMS external environmental sensors and energy generation devices, human body implantable biosensors and energy generation devices, electron field emission devices and many more MEMS/NEMS devices, to produce transformational positive impact on the way and quality of life of people worldwide.


Micromachines ◽  
2021 ◽  
Vol 12 (5) ◽  
pp. 541
Author(s):  
Muhammad Imran Khan ◽  
Ahmed S. Alshammari ◽  
Badr M. Alshammari ◽  
Ahmed A. Alzamil

This work deals with the analysis of spectrum generation from advanced integrated circuits in order to better understand how to suppress the generation of high harmonics, especially in a given frequency band, to design and implement noise-free systems. At higher frequencies, the spectral components of signals with sharp edges contain more energy. However, current closed-form expressions have become increasingly unwieldy to compute higher-order harmonics. The study of spectrum generation provides an insight into suppressing higher-order harmonics (10th order and above), especially in a given frequency band. In this work, we discussed the influence of transistor model quality and input signal on estimates of the harmonic contents of switching waveforms. Accurate estimates of harmonic contents are essential in the design of highly integrated micro- and nanoelectromechanical systems. This paper provides a comparative analysis of various flip-flop/latch topologies on different process technologies, i.e., 130 and 65 nm. An FFT plot of the simulated results signifies that the steeper the spectrum roll-off, the lesser the content of higher-order harmonics. Furthermore, the results of the comparison illustrate the improvement in the rise time, fall time, clock-Q delay and spectrum roll-off on the better selection of slow-changing input signals and more accurate transistor models.


Sign in / Sign up

Export Citation Format

Share Document