Fiber-optic magnetic field and current sensor using magneto-birefringence of dense ferrofluid thin films

1991 ◽  
Author(s):  
Yingtian Pan ◽  
Xiande Liu ◽  
Congwu Du ◽  
Zaiguang Li
Keyword(s):  
Magnetic Field ◽  
Thin Films ◽  
Fiber Optic ◽  
Current Sensor

scholarly journals Differential twin receiving fiber-optic magnetic field and electric current sensor utilizing a microfiber coupler

2015 ◽  
Vol 23 (7) ◽  
pp. 9407 ◽  
Author(s):  
Shao-cheng Yan ◽  
Ye Chen ◽  
Cai Li ◽  
Fei Xu ◽  
Yan-qing Lu
Keyword(s):  
Magnetic Field ◽  
Electric Current ◽  
Fiber Optic ◽  
Current Sensor

Hybrid Fiber-Optic Current Sensor Using Two Faraday Glass-Slab Magnetic Field Sensors

2004 ◽  
Vol 43 (5A) ◽  
pp. 2737-2741 ◽  
Author(s):  
Choong Soo Lim ◽  
Kijang Oh ◽  
Dalwoo Kim ◽  
Kyuman Cho
Keyword(s):  
Magnetic Field ◽  
Fiber Optic ◽  
Current Sensor ◽  
Hybrid Fiber ◽  
Magnetic Field Sensors ◽  
Glass Slab

Electrical Anisotropy of Thin Metal Films Growing on Dielectric Substrates

2002 ◽  
Vol 7 (2) ◽  
pp. 45-52
Author(s):  
L. Jakučionis ◽  
V. Kleiza
Keyword(s):  
Magnetic Field ◽  
Thin Films ◽  
Uniaxial Anisotropy ◽  
Metal Films ◽  
Thin Layers ◽  
Electrical Anisotropy ◽  
Electrical Field ◽  
Dielectric Substrates ◽  
Unequal Probability ◽  
Conductive Thin Films

Electrical properties of conductive thin films, that are produced by vacuum evaporation on the dielectric substrates, and which properties depend on their thickness, usually are anisotropic i.e. they have uniaxial anisotropy. If the condensate grow on dielectric substrates on which plane electrical field E is created the transverse voltage U⊥ appears on the boundary of the film in the direction perpendicular to E. Transverse voltage U⊥ depends on the angle γ between the applied magnetic field H and axis of light magnetisation. When electric field E is applied to continuous or grid layers, U⊥ and resistance R of layers are changed by changing γ. It means that value of U⊥ is the measure of anisotropy magnitude. Increasing voltage U0 , which is created by E, U⊥ increases to certain magnitude and later decreases. The anisotropy of continuous thin layers is excited by inequality of conductivity tensor components σ0 ≠ σ⊥. The reason of anisotropy is explained by the model which shows that properties of grain boundaries are defined by unequal probability of transient of charge carrier.

Nursing Movement Monitoring System Utilizing Hetero-core Fiber Optic Sensors Embedded in Medical Thin Films

2018 ◽  
Vol 138 (12) ◽  
pp. 525-532
Author(s):  
Masahiko Ito ◽  
Yuya Koyama ◽  
Michiko Nishiyama ◽  
Emi Yanagisawa ◽  
Mariko Hayashi ◽  
...  
Keyword(s):  
Thin Films ◽  
Monitoring System ◽  
Fiber Optic ◽  
Fiber Optic Sensors ◽  
Core Fiber ◽  
Movement Monitoring

High-sensitivity fiber optic magnetic field sensor based on lossy mode resonance and hollow core-offset structure

2021 ◽  
pp. 1-12
Author(s):  
Xue-Peng Jin ◽  
Hong-Zhi Sun ◽  
Shuo-Wei Jin ◽  
Wan-Ming Zhao ◽  
Jing-Ren Tang ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Fiber Optic ◽  
High Sensitivity ◽  
Magnetic Field Sensor ◽  
Hollow Core ◽  
Field Sensor

scholarly journals Effects of Perpendicular Magnetic Field Annealing on the Structural and Magnetic Properties of [Co/Ni]2/PtMn Thin Films

2021 ◽  
Vol 7 (3) ◽  
pp. 38
Author(s):  
Roshni Yadav ◽  
Chun-Hsien Wu ◽  
I-Fen Huang ◽  
Xu Li ◽  
Te-Ho Wu ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Thin Films ◽  
Magnetic Properties ◽  
Photoelectron Spectroscopy ◽  
Perpendicular Magnetic Field ◽  
Face Centered Cubic ◽  
Lattice Image ◽  
X Ray ◽  
Field Annealing ◽  
Face Centered

In this study, [Co/Ni]2/PtMn thin films with different PtMn thicknesses (2.7 to 32.4 nm) were prepared on Si/SiO2 substrates. The post-deposition perpendicular magnetic field annealing (MFA) processes were carried out to modify the structures and magnetic properties. The MFA process also induced strong interlayer diffusion, rendering a less sharp interface between Co and Ni and PtMn layers. The transmission electron microscopy (TEM) lattice image analysis has shown that the films consisted of face-centered tetragonal (fct) PtMn (ordered by MFA), body-centered cubic (bcc) NiMn (due to intermixing), in addition to face-centered cubic (fcc) Co, Ni, and PtMn phases. The peak shift (2-theta from 39.9° to 40.3°) in X-ray diffraction spectra also confirmed the structural transition from fcc PtMn to fct PtMn after MFA, in agreement with those obtained by lattice images in TEM. The interdiffusion induced by MFA was also evidenced by the depth profile of X-ray photoelectron spectroscopy (XPS). Further, the magnetic properties measured by vibrating sample magnetometry (VSM) have shown an increased coercivity in MFA-treated samples. This is attributed to the presence of ordered fct PtMn, and NiMn phases exchange coupled to the ferromagnetic [Co/Ni]2 layers. The vertical shift (Mshift = −0.03 memu) of the hysteresis loops is ascribed to the pinned spins resulting from perpendicular MFA processes.

The influence of pressure and magnetic field on the deposition of epitaxial TiBx thin films from DC magnetron sputtering

Vacuum ◽  
2020 ◽  
Vol 177 ◽  
pp. 109355
Author(s):  
Nils Nedfors ◽  
Daniel Primetzhofer ◽  
Igor Zhirkov ◽  
Justinas Palisaitis ◽  
Per O.Å. Persson ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Thin Films ◽  
Magnetron Sputtering ◽  
Dc Magnetron Sputtering

Low temperature micro-Raman measurements under magnetic field of thin films

2007 ◽  
Vol 310 (2) ◽  
pp. 2164-2166 ◽  
Author(s):  
A. Antonakos ◽  
D. Lampakis ◽  
D. Palles ◽  
E. Liarokapis ◽  
W. Prellier ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Thin Films ◽  
Low Temperature
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