Temperature dependence of the multilayer films properties composed of magneto-optical and dielectric materials

2003 ◽  
Author(s):  
Jose L. Arce-Diego ◽  
David Pereda Cubian ◽  
Luis M. Villaverde-Castanedo
Keyword(s):  
Temperature Dependence ◽  
Dielectric Materials ◽  
Multilayer Films

scholarly journals Temperature-Driven Spin Reorientation Transition in CoPt/AlN Multilayer Films

2012 ◽  
Vol 2012 ◽  
pp. 1-7
Author(s):  
Wupeng Cai ◽  
Shinji Muraishi ◽  
Ji Shi ◽  
Yoshio Nakamura ◽  
Wei Liu ◽  
...  
Keyword(s):  
Temperature Dependence ◽  
Mean Field ◽  
Multilayer Films ◽  
Spin Reorientation ◽  
Strong Temperature Dependence ◽  
Mean Field Model ◽  
Spin Reorientation Transition ◽  
Magnetoelastic Effect ◽  
Out Of Plane ◽  
Interface Anisotropy

Spin reorientation transition phenomena from out-of-plane to in-plane direction with increasing temperature are observed for the 500°C annealed CoPt/AlN multilayer films with different CoPt layer thicknesses. CoPt-AlN interface and volume anisotropy contributions, favoring out-of-plane and in-plane magnetization, respectively, are separately determined at various temperatures. Interface anisotropy exhibits much stronger temperature dependence than volume contribution, hence the temperature-driven spin reorientation transition occurs. Interface anisotropy in this work consists of Néel interface anisotropy and magnetoelastic effect. Magnetoelastic effect degrades rapidly and changes its sign from positive to negative above 200°C, because of the involvement of stress state in CoPt films with temperature. By contrast, Néel interface anisotropy decays slowly, estimated from a Néel mean field model. Thus, the strong temperature dependence of CoPt-AlN interface anisotropy is dominated by the change of magnetoelastic effect.

TEMPERATURE DEPENDENCE OF THE n PARAMETER IN THE DISSADO–HILL MODEL

2013 ◽  
Vol 27 (06) ◽  
pp. 1350040 ◽  
Author(s):  
A. DOFF ◽  
J. C. GENTILINI ◽  
O. CAMBRUZZI
Keyword(s):  
Temperature Dependence ◽  
Quantum Electrodynamics ◽  
Dielectric Response ◽  
Dielectric Material ◽  
Dielectric Materials ◽  
Energy Scale ◽  
Dielectric Polarization ◽  
Hill Model ◽  
Running Coupling ◽  
Many Body Interactions

The response of a dielectric material to the application of an external electric field is characterized by the dependence of the complex dielectric polarization susceptibility on frequency ω and external factors such as temperature T. Even today, we do not have a universal model that describes the behavior for all materials. However, Dissado and Hill (DH) have proposed a model based on many-body interactions that is able to explain the dielectric response observed in many dielectric materials. By considering an analogy between the description given in the cluster approach to the structure of imperfect materials and the formalism developed in quantum field theory (QFT), particularly the scale invariance behavior displayed by the dependence of the running coupling constant of quantum electrodynamics (QED) on the energy scale Λ, we will include temperature dependence in the (n) and (m) parameters of the DH model to consider the effects of temperature on the dielectric response of some materials.

scholarly journals The temperature dependence of perpendicular anisotropy in Co/Pt and Co/Au multilayer films

1993 ◽  
Vol 29 (6) ◽  
pp. 3376-3378 ◽  
Author(s):  
H.Y. Zhang ◽  
Y.J. Wang ◽  
G.G. Zheng ◽  
J.X. Shen ◽  
Z.S. Shan ◽  
...  
Keyword(s):  
Temperature Dependence ◽  
Multilayer Films ◽  
Perpendicular Anisotropy

Temperature dependence of resistivity for thermally diffused V3Si multilayer films

1986 ◽  
Vol 62 (5-6) ◽  
pp. 385-396 ◽  
Author(s):  
A. Di Chiara ◽  
U. Scotti di Uccio ◽  
M. Senatore ◽  
L. Maritato
Keyword(s):  
Temperature Dependence ◽  
Multilayer Films

DEPENDENCE OF CRITICAL CURRENT ON TEMPERATURE FOR DIRTY TYPE-II SUPERCONDUCTORS

1989 ◽  
Vol 03 (06) ◽  
pp. 489-492
Author(s):  
Z. YU ◽  
S.Y. DING ◽  
K.X. SHI ◽  
J.L. YAN
Keyword(s):  
Temperature Dependence ◽  
Critical Current ◽  
Electron Scattering ◽  
Flux Pinning ◽  
Multilayer Films ◽  
Experimental Results ◽  
Type Ii ◽  
Defect Model ◽  
Pinning Mechanism ◽  
Type Ii Superconductors

Based on the non-ideal planar defect model developed by the authors earlier and electron scattering flux pinning mechanism, we have derived a temperature dependence of critical current which predicts a same relation for both of I c and H c2 in dirty type-II superconductors. In order to test the prediction, the I c (T) and H c2 (T) were measured on PbBi-SiO multilayer films. The agreement between the theoretical and experimental results is satisfactory.

scholarly journals Temperature dependence of exchange bias in (NiFe/IrMn)n multilayer films studied through static and dynamic techniques

AIP Advances ◽  
2018 ◽  
Vol 8 (5) ◽  
pp. 056302
Author(s):  
Daniel J. Adams ◽  
Shankar Khanal ◽  
Mohammad Asif Khan ◽  
Artur Maksymov ◽  
Leonard Spinu
Keyword(s):  
Temperature Dependence ◽  
Exchange Bias ◽  
Multilayer Films ◽  
Dynamic Techniques
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