Effect of the interface recombination current fluctuations on 1/f noise of gated lateral bipolar transistors

2003 ◽  
Author(s):  
Gregory G. Romas, Jr. ◽  
Md Mazhar Ul Hoque ◽  
Zeynep Celik-Butler
Keyword(s):  
Bipolar Transistors ◽  
Current Fluctuations ◽  
Interface Recombination ◽  
Recombination Current

Extrinsic Base Surface Recombination Current in Surface-Passivated InGaP/GaAs Heterojunction Bipolar Transistors

1993 ◽  
Vol 32 (Part 2, No. 10B) ◽  
pp. L1500-L1502 ◽  
Author(s):  
Hiroshi Ito ◽  
Osaake Nakajima ◽  
Koichi Nagata ◽  
Takashi Makimura ◽  
Tadao Ishibashi
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
Surface Recombination ◽  
Bipolar Transistors ◽  
Base Surface ◽  
Recombination Current ◽  
Extrinsic Base

Observation of the Surface Recombination Current with an Ideality Factor of Unity in AlGaAs/GaAs Heterojunction Bipolar Transistors

1991 ◽  
Vol 30 (Part 2, No. 2B) ◽  
pp. L266-L268 ◽  
Author(s):  
Kazuhiro Mochizuki ◽  
Hiroshi Masuda ◽  
Masahiko Kawata ◽  
Katsuhiko Mitani ◽  
Chuushiro Kusano
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
Ideality Factor ◽  
Surface Recombination ◽  
Bipolar Transistors ◽  
Recombination Current

Correlation between Photoreflectance Spectra and Electrical Characteristics of InP/GaAsSb Double Heterojunction Bipolar Transistors

2004 ◽  
Vol 829 ◽  
Author(s):  
Hiroki Sugiyama ◽  
Yasuhiro Oda ◽  
Haruki Yokoyama ◽  
Takashi Kobayashi ◽  
Masahiro Uchida ◽  
...  
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
Bipolar Transistors ◽  
High Concentration ◽  
Organic Vapor ◽  
Double Heterojunction ◽  
Metal Organic ◽  
Emitter Region ◽  
Recombination Centers ◽  
Recombination Current

ABSTRACTWe report a photoreflectance (PR) characterization of InP/GaAsSb double-heterojunction bipolar transistor (DHBT) epitaxial wafers grown by metal-organic vapor-phase epitaxy (MOVPE). The origin of the Franz-Keldysh oscillations (FKOs) in the PR spectra was identified by step etching of the samples. FKOs from the InP emitter region were observed in the wafer with low recombination forward current at the emitter-base (E/B) heterojunction. In contrast, they did not appear when recombination current was dominant. The absence of the FKOs from the emitter indicates the high concentration of the recombination centers at the E/B heterojunction. We have also measured PR spectra from InAlP/GaAsSb/InP DHBT wafers. Pronounced FKOs from InAlP emitter reflect the suppression of recombination at E/B heterojunctions.

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