The impact cross section of ErF3 centers in ZnS thin film

1988 ◽  
Vol 40-41 ◽  
pp. 786-787
Author(s):  
Baozhu Luo ◽  
Jiaqi Yu ◽  
Guozhu Zhong
Keyword(s):  
Thin Film ◽  
Cross Section ◽  
The Impact

Non-Destructive Assessment of Thin Film Stresses and Crystal Qualify of Silicon on Insulator Materials with Raman Spectroscopy

1990 ◽  
Vol 188 ◽  
Author(s):  
Ingrid De Wolf ◽  
Jan Vanhellemont ◽  
Herman E. Maes
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Raman Spectroscopy ◽  
Cross Section ◽  
Silicon Layer ◽  
Silicon On Insulator ◽  
Micro Raman Spectroscopy ◽  
Transmission Electron ◽  
Non Destructive ◽  
Zone Melt

ABSTRACTMicro Raman spectroscopy (RS) is used to study the crystalline quality and the stresses in the thin superficial silicon layer of Silicon-On-Insulator (SO) materials. Results are presented for SIMOX (Separation by IMplanted OXygen) and ZMR (Zone Melt Recrystallized) substrates. Both as implanted and annealed SIMOX structures are investigated. The results from the as implanted structures are correlated with spectroscopic ellipsometry (SE) and cross-section transmission electron microscopy (TEM) analyses on the same material. Residual stress in ZMR substrates is studied in low- and high temperature gradient regions.

Combined analysis of spatially resolved electronic structure and composition on a cross-section of a thin film Cu(In1-x Ga x )S2 solar cell

2009 ◽  
Vol 206 (5) ◽  
pp. 1017-1020 ◽  
Author(s):  
R. Mainz ◽  
F. Streicher ◽  
D. Abou-Ras ◽  
S. Sadewasser ◽  
R. Klenk ◽  
...  
Keyword(s):  
Thin Film ◽  
Electronic Structure ◽  
Solar Cell ◽  
Cross Section ◽  
Combined Analysis ◽  
Spatially Resolved
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