Numerical simulation study on Cz growth of silicon single crystal in a magnetic field

2002 ◽  
Author(s):  
Jinghe Liu ◽  
Jing Sun ◽  
Zhongli Zhu ◽  
Ying Cao ◽  
Ling Liu ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Numerical Simulation ◽  
Single Crystal ◽  
Simulation Study ◽  
Silicon Single Crystal

Numerical Simulation Study for the Effect of the Strength and the Direction of a Static Magnetic Field on the Transient Double-Diffusive Flow in Liquid Phase during an Alloy Solidification

2010 ◽  
Vol 297-301 ◽  
pp. 97-104 ◽  
Author(s):  
Farid Mechighel ◽  
Bernard Pateyron ◽  
Mahfoud Kadja ◽  
Mohammed El Ganaoui ◽  
S. Dost
Keyword(s):  
Magnetic Field ◽  
Numerical Simulation ◽  
Static Magnetic Field ◽  
Simulation Study ◽  
Solidification Process ◽  
Magnetic Field Effects ◽  
Charge Balance ◽  
Diffusive Flow ◽  
Volume Method ◽  
Double Diffusive

A numerical simulation study has been carried out to examine the effect of a static magnetic field on the solidification process of an alloy. A mathematical model, based on the continuum model, was developed for the computation of a transient double-diffusive fluid flow under Lorentz body force. The model includes conservation of mass and momentum, heat, species and electrical charge balance equations. The simulation domain was selected as a cavity filled with a metallic alloy and differentially heated, which may be taken as a Bridgman model domain used in the crystal growth process. The solution is carried out by using a Finite Volume Method. Study of the direction and the intensity of the applied magnetic field effects on stabilizing the double diffusive flow field were also carried out. Simulation results indicate that the use of a static, magnetic field in this growth setup is effective in suppressing natural convection in the solution.

Effect of magnetic field on the characteristic of silicon single crystal

1989 ◽  
Vol 6 (11) ◽  
pp. 507-510
Author(s):  
Mao Zaixian ◽  
Mai Zhenhong ◽  
Zhou Shiren ◽  
Ye Shuichi
Keyword(s):  
Magnetic Field ◽  
Single Crystal ◽  
Silicon Single Crystal

A Numerical Simulation Study on the Effects of Crucible Rotation and Magnetic Fields in Growth of SiGe by the Traveling Heater Method

2011 ◽  
Vol 134 (1) ◽  
Author(s):  
Youhei Takagi ◽  
Yasunori Okano ◽  
Sadik Dost
Keyword(s):  
Magnetic Field ◽  
Numerical Simulation ◽  
Static Magnetic Field ◽  
Simulation Study ◽  
Concentration Field ◽  
Magnetic Field Direction ◽  
Simultaneous Application ◽  
Rotation Rates ◽  
Traveling Heater Method ◽  
Crucible Rotation

A numerical simulation study was carried out to shed light on the effects of applied crucible rotation and static magnetic field during the traveling heater method growth of bulk SiGe single crystals. The simulation results show that the application of crucible rotation weakens the radial silicon concentration gradient due to the effect of centrifugal force. The effects of applied static magnetic field direction and strength on the concentration field in the melt were also studied. It was found that the simultaneous application of crucible rotation and static magnetic field is best to grow large crystals with uniform composition. An optimum combination of crucible rotation rates and applied magnetic field strengths is determined.

Numerical simulation of point defect transport in floating-zone silicon single crystal growth

2001 ◽  
Vol 230 (1-2) ◽  
pp. 300-304 ◽  
Author(s):  
T.L. Larsen ◽  
L. Jensen ◽  
A. Lüdge ◽  
H. Riemann ◽  
H. Lemke
Keyword(s):  
Numerical Simulation ◽  
Crystal Growth ◽  
Single Crystal ◽  
Point Defect ◽  
Single Crystal Growth ◽  
Silicon Single Crystal ◽  
Floating Zone
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