Electronic structure of nitrogen-doped GaAs and GaP

2002 ◽  
Author(s):  
A. Mascarenhas ◽  
Yong Zhang
2006 ◽  
Vol 14 (2-3) ◽  
pp. 151-164 ◽  
Author(s):  
A. V. Okotrub ◽  
L. G. Bulusheva ◽  
V. V. Belavin ◽  
A. G. Kudashov ◽  
A. V. Gusel'nikov ◽  
...  

2005 ◽  
Vol 17 (25) ◽  
pp. 6349-6353 ◽  
Author(s):  
M. Sathish ◽  
B. Viswanathan ◽  
R. P. Viswanath ◽  
Chinnakonda S. Gopinath

2016 ◽  
Vol 18 (32) ◽  
pp. 22617-22627 ◽  
Author(s):  
S. Livraghi ◽  
N. Barbero ◽  
S. Agnoli ◽  
C. Barolo ◽  
G. Granozzi ◽  
...  

The electronic structure of nitrogen doped tin(iv) oxide (SnO2) materials prepared in the form of nanometric powders has been characterized employing a variety of spectroscopic techniques.


2002 ◽  
Vol 81 (12) ◽  
pp. 2235-2237 ◽  
Author(s):  
James Birrell ◽  
J. A. Carlisle ◽  
O. Auciello ◽  
D. M. Gruen ◽  
J. M. Gibson

2003 ◽  
Vol 17 (09) ◽  
pp. 375-382 ◽  
Author(s):  
G. L. ZHAO ◽  
D. BAGAYOKO ◽  
E. G. WANG

We performed local density functional calculations for the electronic structure of short carbon nanobells. The calculated local density of states of the nanobells revealed field emission characteristics that agree with experimental observations. We also performed total energy calculations to study the structural stability and a related possible growth mechanism of the nanobells. In the nitrogen-doped carbon nanobells, nitrogen atoms that are attracted to the open-edge sites of the carbon nanobells appear to stop the growth of the nanostructures.


2014 ◽  
Vol 50 (73) ◽  
pp. 10637-10640 ◽  
Author(s):  
Lankani P. Wijesinghe ◽  
Buddhie S. Lankage ◽  
Gearóid M. Ó Máille ◽  
Sarath D. Perera ◽  
Deanne Nolan ◽  
...  

Demonstrating the chemical control of band gap and supramolecular stacking in four N-doped methoxy-substituted nanographenes.


2019 ◽  
Vol 1151 ◽  
pp. 12-23 ◽  
Author(s):  
Cesar Gabriel Vera de la Garza ◽  
Esau Martínez Olmedo ◽  
Serguei Fomine

Microscopy ◽  
2019 ◽  
Vol 68 (Supplement_1) ◽  
pp. i37-i37
Author(s):  
K Matsuura ◽  
Y Sato ◽  
M Terauchi ◽  
M Aono ◽  
S Hashimoto ◽  
...  

Materials ◽  
2020 ◽  
Vol 13 (5) ◽  
pp. 1173 ◽  
Author(s):  
L. G. Bulusheva ◽  
V. E. Arkhipov ◽  
K. M. Popov ◽  
V. I. Sysoev ◽  
A. A. Makarova ◽  
...  

Heteroatom doping is a widely used method for the modification of the electronic and chemical properties of graphene. A low-pressure chemical vapor deposition technique (CVD) is used here to grow pure, nitrogen-doped and phosphorous-doped few-layer graphene films from methane, acetonitrile and methane-phosphine mixture, respectively. The electronic structure of the films transferred onto SiO2/Si wafers by wet etching of copper substrates is studied by X-ray photoelectron spectroscopy (XPS) and near-edge X-ray absorption fine structure (NEXAFS) spectroscopy using a synchrotron radiation source. Annealing in an ultra-high vacuum at ca. 773 K allows for the removal of impurities formed on the surface of films during the synthesis and transfer procedure and changes the chemical state of nitrogen in nitrogen-doped graphene. Core level XPS spectra detect a low n-type doping of graphene film when nitrogen or phosphorous atoms are incorporated in the lattice. The electrical sheet resistance increases in the order: graphene < P-graphene < N-graphene. This tendency is related to the density of defects evaluated from the ratio of intensities of Raman peaks, valence band XPS and NEXAFS spectroscopy data.


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