Recent progress in the design, simulation, and fabrication of small cross-section silicon-on-insulator VOAs

Silicon-On-Insulator (SOI) technology [1-4] has been shown to have significant performance and fabrication advantages over conventional bulk processing for a wide variety of large scale CMOS IC applications. Advantages in radiation environments has generated significant interest in this technology from military and space science communities [5,6]. Possible advantages of SOI technology for low power, low voltage and high performance circuit applications is under serious consideration by several commercial IC manufacturers [7,8].

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Provision of Long Item Materials

Key Engineering Materials ◽

10.4028/www.scientific.net/kem.572.257 ◽

2013 ◽

Vol 572 ◽

pp. 257-260

Author(s):

Markus Straub ◽

Shu Jun Zhang ◽

Carsten Manz ◽

Kevin Hapeshi

Keyword(s):

Case Studies ◽

Cross Section ◽

The Other ◽

Small Cross Section ◽

Plant Area

Purpose: This paper shows the effects of using Minomi on the provision of long items in the plant area. In details it will be evaluated if the Minomi principle is usable for the provision of long item material at the manufacturing area and what improvements can be achieved. Definitions of the term Minomi and the term long item: The term long item is used in the logistic sector for all materials that are longer than 2.5 meters, require individually packing and have a relatively small cross section [1,2]. The term Minomi has not been clearly defined. In practise, the term Minomi is often associated with a system that does not use boxes for the material provision [3]. Findings: Through the case studies, it has been found that additional advantages can be obtained by using Minomi for the provision of long items than the other existing methods.

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The influence of process parameters in linear friction welded 30CrNiMo8 small cross-section: a modelling approach

Science and Technology of Welding & Joining ◽

10.1080/13621718.2018.1492210 ◽

2018 ◽

Vol 24 (2) ◽

pp. 121-129 ◽

Cited By ~ 3

Author(s):

Pedro dos Santos Effertz ◽

Franz Fuchs ◽

Norbert Enzinger

Keyword(s):

Cross Section ◽

Process Parameters ◽

Small Cross Section ◽

Influence Of Process Parameters ◽

Linear Friction ◽

Modelling Approach

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Non-Destructive Assessment of Thin Film Stresses and Crystal Qualify of Silicon on Insulator Materials with Raman Spectroscopy

MRS Proceedings ◽

10.1557/proc-188-53 ◽

1990 ◽

Vol 188 ◽

Cited By ~ 4

Author(s):

Ingrid De Wolf ◽

Jan Vanhellemont ◽

Herman E. Maes

Keyword(s):

Thin Film ◽

Electron Microscopy ◽

Raman Spectroscopy ◽

Cross Section ◽

Silicon Layer ◽

Silicon On Insulator ◽

Micro Raman Spectroscopy ◽

Transmission Electron ◽

Non Destructive ◽

Zone Melt

ABSTRACTMicro Raman spectroscopy (RS) is used to study the crystalline quality and the stresses in the thin superficial silicon layer of Silicon-On-Insulator (SO) materials. Results are presented for SIMOX (Separation by IMplanted OXygen) and ZMR (Zone Melt Recrystallized) substrates. Both as implanted and annealed SIMOX structures are investigated. The results from the as implanted structures are correlated with spectroscopic ellipsometry (SE) and cross-section transmission electron microscopy (TEM) analyses on the same material. Residual stress in ZMR substrates is studied in low- and high temperature gradient regions.

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