Analysis of gas-phase reactions during pulsed laser ablation using laser-induced fluorescence, absorption, and emission spectroscopy

2002 ◽  
Author(s):  
Joerg Hermann ◽  
Christophe Dutouquet
Keyword(s):  
Laser Ablation ◽  
Gas Phase ◽  
Emission Spectroscopy ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Laser Induced Fluorescence ◽  
Gas Phase Reactions ◽  
Absorption And Emission ◽  
Absorption And Emission Spectroscopy

Emission spectroscopy of aluminum nitride plasma plume induced by ultra-short pulsed laser ablation

2003 ◽  
Vol 208-209 ◽  
pp. 101-106 ◽  
Author(s):  
A. Santagata ◽  
V. Marotta ◽  
S. Orlando ◽  
R. Teghil ◽  
M. Zaccagnino ◽  
...  
Keyword(s):  
Laser Ablation ◽  
Aluminum Nitride ◽  
Emission Spectroscopy ◽  
Plasma Plume ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation

Pulsed laser ablation of MoSi2: gas phase analysis

2002 ◽  
Vol 186 (1-4) ◽  
pp. 335-338 ◽  
Author(s):  
R. Teghil ◽  
L. D’Alessio ◽  
A. Santagata ◽  
M. Zaccagnino ◽  
D. Ferro
Keyword(s):  
Laser Ablation ◽  
Gas Phase ◽  
Phase Analysis ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation

Gas Phase Spectroscopy of a Ge Film LCVD Reactor

1983 ◽  
Vol 29 ◽  
Author(s):  
J. F. Osmundsen ◽  
C. C. Abele ◽  
J. G. Eden
Keyword(s):  
Gas Phase ◽  
Excited States ◽  
Emission Spectroscopy ◽  
Laser Intensity ◽  
Gas Pressure ◽  
Absorption And Emission ◽  
Simultaneous Absorption ◽  
Krf Laser ◽  
Absorption And Emission Spectroscopy ◽  
Gas Phase Spectroscopy

ABSTRACTThe gas phase photochemistry of an LCVD reactor used to grow polycrystalline Ge films was studied by absorption and emission spectroscopy. Upon photodissociating GeH4 (5% in an Ar or He carrier) at 248 nm (KrF laser), excited states of Ge and GeH are produced. Spatially, spectrally and temporally resolved atomic and molecular emissions are monitored as a function of gas pressure and laser intensity. These data lead to the conclusion that GeH2 is predominantly produced directly from GeH4 by The simultaneous absorption of two 5 eV (λ = 248 nm) photons.

Analysis of Pulsed Excimer Laser Ablation of PZT, Pb And Ti in an Oxygen Ambient Using Energy Dispersive Mass Spectrometry

1996 ◽  
Vol 433 ◽  
Author(s):  
L. G. Coccia ◽  
G. C. Tyrrell ◽  
I. W. Boyd
Keyword(s):  
Mass Spectrometry ◽  
Laser Ablation ◽  
Gas Phase ◽  
Lead Zirconate Titanate ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Lead Zirconate ◽  
Binding Energies ◽  
Energy Dispersive ◽  
Wide Range

AbstractA number of factors have been identified as affecting the gas phase oxidation of cations during pulsed laser ablation of lead zirconate titanate (PZT), by using energy dispersive mass spectrometry (EDMS). These phenomena are known to be critical to the deposition of high quality thin films of PZT. However, to isolate the role of each cation species and the influence of its gas phase properties, we have also looked beyond the ablation of the PZT ceramic. In this paper, we detail our observations during pulsed laser ablation of electroceramic and metallic targets, specifically PZT, Pb and Ti. We have observed the evolution and transport of molecular species during gas phase expansion over a wide range of oxygen pressures (10−7 - 10−1 mbar) and laser fluences (0.3 -10 Jcm−2). The yields of the molecular ion species are strongly dependent upon the number density of the background gas. We propose an interpretation of the relative yields of the species based upon their respective gas phase binding energies and their ease of formation based upon the reaction thermodynamics and reaction cross-section of each species.

Pulsed laser ablation-deposition of La0.5Sr0.5CoO3 for use as electrodes in nonvolatile ferroelectric memories

1996 ◽  
Vol 11 (6) ◽  
pp. 1514-1519 ◽  
Author(s):  
R. Dat ◽  
O. Auciello ◽  
D. J. Lichtenwalner ◽  
A. I. Kingon
Keyword(s):  
Laser Ablation ◽  
Emission Spectroscopy ◽  
Smooth Surface ◽  
Optical Emission Spectroscopy ◽  
Pulsed Laser ◽  
Optical Emission ◽  
Pulsed Laser Ablation ◽  
Deposition Parameters ◽  
Ferroelectric Memories ◽  
Oxygen Interaction

La0.5Sr0.5CoO3 (LSCO) thin films have been deposited on (100) MgO substrates using pulsed laser ablation-deposition (PLAD). The crystallographic orientation of LSCO was found to be dependent on the surface treatment of (100) MgO prior to deposition. PLAD deposition parameters were optimized to yield LSCO films with an RMS surface roughness of 40–50 Å. A smooth surface morphology was reproduced as long as the oxygen content of the LSCO target was preserved. Otherwise, “splashing” occurred which resulted in the transfer of condensed particles from molten spherical globules of LSCO from the target to the substrate. Splashing was subsequently eliminated and smooth surface quality was restored after annealing the LSCO target at 550 °C in oxygen for 3 h. Optical emission spectroscopy (OES) of the LSCO's plume identified excited atomic cobalt neutrals, excited singly ionized strontium and lanthanum, and excited molecular LaO species. Oxygen interaction with the plume produced no new species. Furthermore, the OES data suggest that the observed LaO molecules were not created by the chemical reaction between La and O2 during ablation, but were ejected directly from the target during the PLAD process.

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