Magnetoelastic thin films and multilayers for high-frequency applications

2002 ◽  
Author(s):  
Alfred Ludwig ◽  
Michael Frommberger ◽  
Christel Zanke ◽  
Stefan Glasmachers ◽  
Eckhard Quandt
Keyword(s):  
Thin Films ◽  
High Frequency

Magnetic properties of FeXNi100-X (X=20, 17, 15 %) thin films: focus on high-frequency sensory applications

2019 ◽  
pp. 20-25
Author(s):  
Anna Chlenova ◽  
◽  
Elizaveta Golubeva ◽  
Iuliia Novoselova ◽  
Ruslan Salikhov ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetic Properties ◽  
High Frequency

scholarly journals Measurement of Electrical Properties of Superconducting YBCO Thin Films in the VHF Range

Materials ◽  
2021 ◽  
Vol 14 (12) ◽  
pp. 3360
Author(s):  
Yakir Dahan ◽  
Eldad Holdengreber ◽  
Elichai Glassner ◽  
Oz Sorkin ◽  
Shmuel E. Schacham ◽  
...  
Keyword(s):  
Thin Films ◽  
Theoretical Model ◽  
Quality Factor ◽  
High Frequency ◽  
Unit Length ◽  
Superconducting Thin Films ◽  
Electrical Parameters ◽  
Very High Frequency ◽  
Production Constraints ◽  
Very High

A new measurement technique of electrical parameters of superconducting thin films at the Very High Frequency (VHF) range is described, based on resonators with microstrip (MS) structures. The design of an optimal resonator was achieved, based on a thorough theoretical analysis, which is required for derivation of the exact configuration of the MS. A theoretical model is presented, from which an expression for the attenuation of a MS line can be derived. Accordingly, simulations were performed, and an optimal resonator for the VHF range was designed and implemented. Production constraints of YBa2Cu3O7 (YBCO) limited the diameter of the sapphire substrate to 3″. Therefore, a meander configuration was formed to fit the long λ/4 MS line on the wafer. By measuring the complex input reflection coefficients of a λ/4 resonator, we extracted the quality factor, which is mainly affected by the dielectric and conductor attenuations. The experimental results are well fitted by the theoretical model. The dielectric attenuation was calculated using the quasi-static analysis of the MS line. An identical copper resonator was produced and measured to compare the properties of the YBCO resonator in reference to the copper one. A quality factor of ~6·105 was calculated for the YBCO resonator, three orders of magnitude larger than that of the copper resonator. The attenuation per unit length of the YBCO layer was smaller by more than five orders of magnitude than that of the copper.

scholarly journals Defects characterization in thin films photovoltaics materials by correlated high-frequency modulated and time resolved photoluminescence: An application to Cu(In,Ga)Se2

2019 ◽  
Vol 669 ◽  
pp. 520-524
Author(s):  
Baptiste Bérenguier ◽  
Nicolas Barreau ◽  
Alexandre Jaffre ◽  
Daniel Ory ◽  
Jean-François Guillemoles ◽  
...  
Keyword(s):  
Thin Films ◽  
High Frequency ◽  
Time Resolved ◽  
Time Resolved Photoluminescence

Characterizing Dynamic, High-Frequency Friction in Lubricating Complex-Fluid Thin Films Between Viscoelastic Surfaces

2018 ◽  
Vol 66 (4) ◽  
Author(s):  
Thomas Cristiani ◽  
Nicholas Cadirov ◽  
Matthew Ehrman ◽  
Kai Kristiansen ◽  
Jeffrey Scott ◽  
...  
Keyword(s):  
Thin Films ◽  
High Frequency ◽  
Complex Fluid

Study on preferred orientation and high-frequency permeability of magnetic-field-induced NiZnCu ferrite thin films

2020 ◽  
Vol 31 (15) ◽  
pp. 12101-12108
Author(s):  
Hai Liu ◽  
Zhong Yu ◽  
Chuanjian Wu ◽  
Xiaona Jiang ◽  
Rongdi Guo ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Thin Films ◽  
High Frequency ◽  
Preferred Orientation ◽  
Ferrite Thin Films

scholarly journals High-Frequency Resistivity Measurement of Nanocrystalline Magnetic Thin Films.

1999 ◽  
Vol 23 (4−2) ◽  
pp. 1389-1392
Author(s):  
S. Matsumura ◽  
T. Sato ◽  
K. Yamasawa ◽  
Y. Sasaki ◽  
T. Hatanai ◽  
...  
Keyword(s):  
Thin Films ◽  
High Frequency ◽  
Resistivity Measurement ◽  
Magnetic Thin Films

Piezoelectric Coefficients of Aluminum Nitride and Gallium Nitride

1999 ◽  
Vol 572 ◽  
Author(s):  
C. M. Lueng ◽  
H. L. W. Chan ◽  
W. K. Fong ◽  
C. Surya ◽  
C. L. Choy
Keyword(s):  
Thin Films ◽  
Gallium Nitride ◽  
High Temperature ◽  
Molecular Beam Epitaxy ◽  
Aluminum Nitride ◽  
Composite Film ◽  
High Frequency ◽  
Molecular Beam ◽  
Silicon Substrates ◽  
Heterodyne Interferometer

ABSTRACTAluminum nitride (AlN) and gallium nitride (GaN) thin films have potential uses in high temperature, high frequency (e.g. microwave) acoustic devices. In this work, the piezoelectric coefficients of wurtzite AlN and GaN/AlN composite film grown on silicon substrates by molecular beam epitaxy were measured by a Mach-Zehnder type heterodyne interferometer. The effects of the substrate on the measured coefficients are discussed.

Sign in / Sign up

Export Citation Format

Share Document