Visualization tool for advanced laser system development

2002 ◽  
Author(s):  
Gregg A. Crockett ◽  
Richard L. Brunson
Keyword(s):  
System Development ◽  
Laser System ◽  
Visualization Tool

scholarly journals Ultra-stable clock laser system development towards space applications

2016 ◽  
Vol 6 (1) ◽  
Author(s):  
Dariusz Świerad ◽  
Sebastian Häfner ◽  
Stefan Vogt ◽  
Bertrand Venon ◽  
David Holleville ◽  
...  
Keyword(s):  
System Development ◽  
Laser System ◽  
Space Applications

scholarly journals A 10-Hz terawatt class Ti:sapphire laser system: Development and applications

Pramana ◽  
2010 ◽  
Vol 75 (5) ◽  
pp. 875-881
Author(s):  
A. K. Sharma ◽  
J. Smedley ◽  
T. Tsang ◽  
T. Rao
Keyword(s):  
System Development ◽  
Laser System ◽  
Ti:Sapphire Laser

scholarly journals Mid-infrared Laser System Development for Dielectric Laser Accelerators

2014 ◽  
Vol 52 ◽  
pp. 68-74 ◽  
Author(s):  
Igor Jovanovic ◽  
Guibao Xu ◽  
Scott Wandel
Keyword(s):  
System Development ◽  
Laser System ◽  
Infrared Laser ◽  
Mid Infrared ◽  
Laser Accelerators

Laser system development for gravitational-wave interferometry in space

2018 ◽  
Author(s):  
Jordan B. Camp ◽  
Michael A. Krainak ◽  
Anthony W. Yu ◽  
Kenji Numata
Keyword(s):  
Gravitational Wave ◽  
System Development ◽  
Laser System

Cross-sectional TEM specimen preparation from magneto-optical disk by ultramicrotomy

1993 ◽  
Vol 51 ◽  
pp. 236-237
Author(s):  
F. Shaapur ◽  
M.J. Kim ◽  
Seh Kwang Lee ◽  
Soon Gwang Kim
Keyword(s):  
System Development ◽  
Thin Foil ◽  
Specimen Preparation ◽  
Material System ◽  
Cross Sectional ◽  
Protective Layers ◽  
New Material ◽  
Diamond Saw ◽  
Original Production ◽  
Thick Medium

TEM characterization and microanalysis of the recording media is crucial and complementary to new material system development as well as quality control applications. Due to the type of material generally used for supporting the medium, i.e., a polymer, conventional macro- and microthinning procedures for thin foil preparation are not applicable. Ultramicrotorny (UM) is a viable option and has been employed in previous similar studies. In this work UM has been used for preparation of XTEM samples from a magneto-optical (MO) recording medium in its original production format.The as-received material system consisted of a 4-layer, 2100 Å thick medium including a 300 Å TbFeCo layer enveloped by silicon nitride protective layers supported on a 1.2 mm thick × 135 mm (5.25 in.) diameter polycarbonate disk. Recording tracks had an approximate pitch of 1.6 μm separated by 800 Å deep peripheral grooves. Using a Buehler Isomet low-speed diamond saw, 1 mm wide and 20 mm long strips were cut out of the disk along the recording tracks.

{10} edge dislocations in YSZ films grown on (100)MgO by PLD

1994 ◽  
Vol 52 ◽  
pp. 530-531
Author(s):  
Jason R. Heffelfinger ◽  
C. Barry Carter
Keyword(s):  
Thin Films ◽  
Semiconductor Lasers ◽  
Vapor Deposition ◽  
Substrate Surface ◽  
Laser System ◽  
Average Energy ◽  
Target Material ◽  
Chemical Vapor ◽  
Buffer Layers ◽  
Organic Chemical

Yttria-stabilized zirconia (YSZ) is currently used in a variety of applications including oxygen sensors, fuel cells, coatings for semiconductor lasers, and buffer layers for high-temperature superconducting films. Thin films of YSZ have been grown by metal-organic chemical vapor deposition, electrochemical vapor deposition, pulse-laser deposition (PLD), electron-beam evaporation, and sputtering. In this investigation, PLD was used to grow thin films of YSZ on (100) MgO substrates. This system proves to be an interesting example of relationships between interfaces and extrinsic dislocations in thin films of YSZ.In this experiment, a freshly cleaved (100) MgO substrate surface was prepared for deposition by cleaving a lmm-thick slice from a single-crystal MgO cube. The YSZ target material which contained 10mol% yttria was prepared from powders and sintered to 85% of theoretical density. The laser system used for the depositions was a Lambda Physik 210i excimer laser operating with KrF (λ=248nm, 1Hz repetition rate, average energy per pulse of 100mJ).

Sign in / Sign up

Export Citation Format

Share Document