Carrier capture times in 1.3-μm materials: GaInNAs, InGaAsP, and InGaAlAs semiconductor quantum well lasers

2002 ◽  
Author(s):  
Joerg Hader ◽  
Jerome V. Moloney ◽  
Stephan W. Koch
Keyword(s):  
Quantum Well ◽  
Quantum Well Lasers ◽  
Carrier Capture ◽  
Semiconductor Quantum Well

High performance InGaAsP/InP semiconductor quantum well lasers realized by gas source molecular beam epitaxy

1992 ◽  
Vol 2 (9) ◽  
pp. 1727-1738 ◽  
Author(s):  
A. Accard ◽  
F. Brillouet ◽  
E. Duda ◽  
B. Fernier ◽  
G. Gelly ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
High Performance ◽  
Molecular Beam ◽  
Quantum Well Lasers ◽  
Gas Source ◽  
Semiconductor Quantum Well

Carrier capture time and its effect on the efficiency of quantum-well lasers

1994 ◽  
Vol 30 (1) ◽  
pp. 54-62 ◽  
Author(s):  
H. Hirayama ◽  
J. Yoshida ◽  
Y. Miyake ◽  
M. Asada
Keyword(s):  
Quantum Well ◽  
Quantum Well Lasers ◽  
Carrier Capture ◽  
Capture Time

Simulation of semiconductor quantum well lasers

2000 ◽  
Vol 47 (10) ◽  
pp. 1917-1925 ◽  
Author(s):  
M.A. Alam ◽  
M.S. Hybertsen ◽  
R.K. Smith ◽  
G.A. Baraff
Keyword(s):  
Quantum Well ◽  
Quantum Well Lasers ◽  
Semiconductor Quantum Well

scholarly journals Semiconductor Quantum Well Lasers with a Temperature Insensitive Threshold Current

2014 ◽  
Author(s):  
A.R. Adams ◽  
I.P. Marko ◽  
J. Mukherjee ◽  
S.J. Sweeney ◽  
A. Gocalinska ◽  
...  
Keyword(s):  
Quantum Well ◽  
Threshold Current ◽  
Quantum Well Lasers ◽  
Semiconductor Quantum Well
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