Ultra-Low Background Operation of Near-Infrared Detectors Using Reference Pixels for NGST

2003 ◽  
Author(s):  
Bernard J. Rauscher ◽  
Donald F. Figer ◽  
Michael W. Regan ◽  
Louis E. Bergeron ◽  
Jesus C. Balleza ◽  
...  
Keyword(s):  
Infrared Detectors ◽  
Near Infrared ◽  
Low Background

High in content InGaAs near-infrared detectors: growth, structural design and photovoltaic properties

2017 ◽  
Vol 123 (4) ◽  
Author(s):  
Zhiwei Zhang ◽  
Guoqing Miao ◽  
Hang Song ◽  
Dabing Li ◽  
Hong Jiang ◽  
...  
Keyword(s):  
Structural Design ◽  
Infrared Detectors ◽  
Near Infrared ◽  
Photovoltaic Properties

Near-Infrared Detectors

2005 ◽  
pp. 7.3-731-7.3-750
Author(s):  
Lorenzo Colace ◽  
Gaetano Assanto ◽  
Gianlorenzo Masini
Keyword(s):  
Infrared Detectors ◽  
Near Infrared

Near infrared detectors based on HgSe and HgCdSe quantum dots generated at the liquid–liquid interface

2013 ◽  
Vol 1 (39) ◽  
pp. 6184 ◽  
Author(s):  
Manoj K. Jana ◽  
P. Chithaiah ◽  
Banavoth Murali ◽  
S. B. Krupanidhi ◽  
Kanishka Biswas ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Infrared Detectors ◽  
Near Infrared ◽  
Liquid Interface

scholarly journals Brighter-fatter Effect in Near-infrared Detectors—III. Fourier-domain Treatment of Flat Field Correlations and Application to WFIRST

2020 ◽  
Vol 132 (1013) ◽  
pp. 074504 ◽  
Author(s):  
Jenna K. C. Freudenburg ◽  
Jahmour J. Givans ◽  
Ami Choi ◽  
Christopher M. Hirata ◽  
Chris Bennett ◽  
...  
Keyword(s):  
Infrared Detectors ◽  
Near Infrared ◽  
Fourier Domain ◽  
Flat Field

scholarly journals Self-Filtering Monochromatic Infrared Detectors Based on Bi2Se3 (Sb2Te3)/Silicon Heterojunctions

Nanomaterials ◽  
2019 ◽  
Vol 9 (12) ◽  
pp. 1771
Author(s):  
Xujie Pan ◽  
Jing He ◽  
Lei Gao ◽  
Handong Li
Keyword(s):  
Response Time ◽  
Infrared Detectors ◽  
Near Infrared ◽  
Nir Light ◽  
Photoelectric Properties ◽  
Detection Response ◽  
Silicon Heterojunctions ◽  
Surface Modified ◽  
High Pass ◽  
Back Illuminated

This paper focuses on the photoelectric properties of heterostructures formed by surface-modified Si (111) and hexagonal, quintuple-layered selenides (Bi2Se3 and Sb2Te3). It was shown that H-passivated Si (111) can form robust Schottky junctions with either Bi2Se3 or Sb2Te3. When back illuminated (i.e., light incident towards the Si side of the junction), both the Bi2Se3/Si and Sb2Te3/Si junctions exhibited significant photovoltaic response at 1030 nm, which is right within the near-infrared (NIR) light wavelength range. A maximum external quantum efficiency of 14.7% with a detection response time of 2 ms for Bi2Se3/Si junction, and of 15.5% with a 0.8 ms response time for the Sb2Te3/Si junction, were achieved. Therefore, utilizing Si constituents as high-pass filters, the Bi2Se3 (Sb2Te3)/Si heterojunctions can serve as monochromatic NIR photodetectors.

scholarly journals Measurement of Reciprocity Failure in Near-Infrared Detectors

2011 ◽  
Vol 123 (900) ◽  
pp. 179-186 ◽  
Author(s):  
T. Biesiadzinski ◽  
W. Lorenzon ◽  
R. Newman ◽  
M. Schubnell ◽  
G. Tarlé ◽  
...  
Keyword(s):  
Infrared Detectors ◽  
Near Infrared ◽  
Reciprocity Failure

scholarly journals JWST near infrared detectors: latest test results

2009 ◽  
Author(s):  
Erin C. Smith ◽  
Bernard J. Rauscher ◽  
David Alexander ◽  
Brian L. Clemons ◽  
Chuck Engler ◽  
...  
Keyword(s):  
Infrared Detectors ◽  
Near Infrared ◽  
Test Results
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