scholarly journals Single-ion implantation for solid state quantum computer development

2002 ◽  
Author(s):  
Thomas Schenkel ◽  
J. Meijer ◽  
Arun Persaud ◽  
Joe W. McDonald ◽  
J. P. Holder ◽  
...  
Keyword(s):  
Solid State ◽  
Ion Implantation ◽  
Quantum Computer ◽  
Computer Development

scholarly journals Single ion implantation for solid state quantum computer development

2002 ◽  
Vol 20 (6) ◽  
pp. 2819 ◽  
Author(s):  
T. Schenkel ◽  
A. Persaud ◽  
S. J. Park ◽  
J. Meijer ◽  
J. R. Kingsley ◽  
...  
Keyword(s):  
Solid State ◽  
Ion Implantation ◽  
Quantum Computer ◽  
Computer Development

Solid state quantum computer development in silicon with single ion implantation

2003 ◽  
Vol 94 (11) ◽  
pp. 7017-7024 ◽  
Author(s):  
T. Schenkel ◽  
A. Persaud ◽  
S. J. Park ◽  
J. Nilsson ◽  
J. Bokor ◽  
...  
Keyword(s):  
Solid State ◽  
Ion Implantation ◽  
Quantum Computer ◽  
Computer Development

Quantum Computer Development with Single Ion Implantation

2007 ◽  
pp. 233-245
Author(s):  
A. Persaud ◽  
S. J. Park ◽  
J. A. Liddle ◽  
I. W. Rangelow ◽  
J. Bokor ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Quantum Computer ◽  
Computer Development

Quantum Computer Development with Single Ion Implantation

2004 ◽  
Vol 3 (1-5) ◽  
pp. 233-245 ◽  
Author(s):  
A. Persaud ◽  
S. J. Park ◽  
J. A. Liddle ◽  
I. W. Rangelow ◽  
J. Bokor ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Quantum Computer ◽  
Computer Development

Ion Implantation Through Thin Silicon Dioxide Layers for Si-based Solid-State Quantum Computer Device Development

2008 ◽  
Vol 1074 ◽  
Author(s):  
Jeffrey McCallum ◽  
Michael L. Dunn ◽  
Eric Gauja
Keyword(s):  
Solid State ◽  
Ion Implantation ◽  
Quantum Computer ◽  
Deep Level ◽  
Interface Trap ◽  
Mos Capacitors ◽  
Thermal Oxide ◽  
Transient Spectroscopy ◽  
Spectroscopy Studies ◽  
Ion Implanted

ABSTRACTIon implantation doping of Si through an SiO2 overlayer is of interest for fabrication of a range of devices on the pathway to development of a solid–state quantum computer (SSQC). The fabrication requirements of devices based on the Kane architecture typically involve implantation through a pre-existing thin device–quality thermal oxide at low fluences ∼1011 cm−2 and ion energies in the range 10 – 20 keV. Here we present results from a deep level transient spectroscopy studies of ion–implanted MOS capacitors in which interface–trap densities have been measured in as–grown and H–passivated thermal oxides and in ion implanted and rapid–thermally processed devices. For thin oxides of 5nm or less and low ion fluences we find that implantation does not significantly increase interface trap densities and somewhat surprisingly that it can even be beneficial when the interface trap density is abnormally high, (∼ 1 × 1011cm−2.eV−1) in the as-grown oxide.

Dynamics of nuclear spin measurement in a mesoscopic solid-state quantum computer

2000 ◽  
Vol 12 (13) ◽  
pp. 2945-2952 ◽  
Author(s):  
Gennady P Berman ◽  
David K Campbell ◽  
Gary D Doolen ◽  
Kirill E Nagaev
Keyword(s):  
Solid State ◽  
Nuclear Spin ◽  
Quantum Computer

scholarly journals Spin diffusion and relaxation in solid state spin quantum computer

2006 ◽  
Vol 352 (1-2) ◽  
pp. 107-114
Author(s):  
G.P. Berman ◽  
B.M. Chernobrod ◽  
V.N. Gorshkov ◽  
V.I. Tsifrinovich
Keyword(s):  
Solid State ◽  
Spin Diffusion ◽  
Quantum Computer ◽  
Spin Quantum ◽  
State Spin
Sign in / Sign up

Export Citation Format

Share Document