Broadband microwave and millimeter-wave EOMs with ultraflat frequency response

1991 ◽  
Author(s):  
Jing-Jong Pan ◽  
Yi Q. Li
2005 ◽  
Author(s):  
C.C. Barron ◽  
C.J. Mahon ◽  
B.J. Thibeault ◽  
G. Wang ◽  
J.R. Karin ◽  
...  

1993 ◽  
Vol 40 (11) ◽  
pp. 2146-2147 ◽  
Author(s):  
C.C. Barron ◽  
C.J. Mohan ◽  
B.J. Thibeault ◽  
G. Wang ◽  
J.R. Karin ◽  
...  

1997 ◽  
Vol 277 (1-2) ◽  
pp. 101-112 ◽  
Author(s):  
A.V. Velichko ◽  
N.T. Cherpak ◽  
E.V. Izhyk ◽  
A.Ya. Kirichenko ◽  
I.N. Chukanova

2017 ◽  
Vol 744 ◽  
pp. 422-427
Author(s):  
N.A. Ngah ◽  
Amiza Rasmi ◽  
Ashaari Yusof ◽  
Norman Fadhil Idham Muhammad ◽  
Ahmad Ismat Abd Rahim ◽  
...  

This paper proposed a newdesign of top illuminated PIN photodetector at 1550nm wavelength for millimeter-wave applications. Device topology, structure and fabrication methods were considered in designing the photodetector. The combination material of InP/InGaAsP/InGaAs/InGaAsP was used in designing the top illuminated PIN photodetector. This PIN photodetector was targeted to produce at least 0.60A/W of responsivity with a dark current of <100nA. The design, layout, and electrical characteristics of this photodetector were carried out using SILVACO TCAD tool. The simulated results show higher responsivity value than targeted, device frequency response of -3dBm at 40GHz with targeted dark current achievable within the wavelength absorption bands specification. The results are compared with similar designs from other reported works.


2015 ◽  
Author(s):  
N. Alasgarzade ◽  
T. Takan ◽  
I. U. Uzun-Kaymak ◽  
A. B. Sahin ◽  
H. Altan

1995 ◽  
Vol 7 (1) ◽  
pp. 89-100
Author(s):  
H. C. Han ◽  
E. S. Mansueto
Keyword(s):  

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