Improved model of HgCdTe's pseudo dielectric function for in-situ ellipsometry data analysis during MBE growth

2002 ◽  
Author(s):  
Giacomo Badano ◽  
James W. Garland ◽  
Jun Zhao ◽  
Sivalingam Sivananthan
Keyword(s):  
Data Analysis ◽  
Dielectric Function ◽  
Mbe Growth ◽  
Improved Model ◽  
Ellipsometry Data

scholarly journals Multilayered Ferromagnetic Nanostructures Study: Processing Data from Magneto-Ellipsometry Measurements

2018 ◽  
Vol 386 ◽  
pp. 131-136
Author(s):  
Olga A. Maximova ◽  
Sergey A. Lyaschenko ◽  
Sergey N. Varnakov ◽  
Sergey G. Ovchinnikov
Keyword(s):  
Data Analysis ◽  
Data Processing ◽  
Great Demand ◽  
Layered Model ◽  
Promising Tool ◽  
Processing Data ◽  
Ferromagnetic Nanostructures ◽  
Layered Nanostructures ◽  
Ellipsometry Data

Nowadays, the magneto-ellipsometry technique is considered as a promising tool for studying nanostructures. It leads to a great demand of both designing set-ups for conducting experiments and developing approaches to data processing. The later one is a problem in framework of in situ analysis as it would be useful to have an approach to data analysis which is reliable, quick and reasonably easy. This work continues our previous study of layered nanostructures by means of magneto-ellipsometry technique and logically generalizes the approach to magneto-ellipsometry data analysis for the multi-layered model use. As a result, the algorithm with detailed description of necessary formulae is presented.

scholarly journals In situ magneto-optical ellipsometry data analysis for films growth control

2017 ◽  
Vol 440 ◽  
pp. 196-198 ◽  
Author(s):  
O.A. Maximova ◽  
N.N. Kosyrev ◽  
S.N. Varnakov ◽  
S.A. Lyaschenko ◽  
I.A. Yakovlev ◽  
...  
Keyword(s):  
Data Analysis ◽  
Growth Control ◽  
Optical Ellipsometry ◽  
Ellipsometry Data

Growth of Epitaxial IrSi3 Layers on Si(111)

1989 ◽  
Vol 160 ◽  
Author(s):  
T. L. Lin ◽  
C. W. Nieh
Keyword(s):  
Surface Morphology ◽  
Molecular Beam ◽  
Solid Phase ◽  
Single Mode ◽  
Growth Conditions ◽  
Tem Analysis ◽  
Mbe Growth ◽  
Good Surface ◽  
Transmission Electron

AbstractEpitaxial IrSi3 films have been grown on Si (111) by molecular beam epitaxy (MBE) at temperatures ranging from 630 to 800 °C and by solid phase epitaxy (SPE) at 500 °C. Good surface morphology was observed for IrSi3 layers grown by MBE at temperatures below 680 °C, and an increasing tendency to form islands is noted in samples grown at higher temperatures. Transmission electron microscopy (TEM) analysis reveals that the IrSi3 layers grow epitaxially on Si(111) with three epitaxial modes depending on the growth conditions. For IrSi3 layers grown by MBE at 630 °C, two epitaxial modes were observed with ~ 50% area coverage for each mode. Single mode epitaxial growth was achieved at a higher MBE growth temperature, but with island formation in the IrSi3 layer. A template technique was used with MBE to improve the IrSi3 surface morphology at higher growth temperatures. Furthermore, single-crystal IrSi3 was grown on Si(111) at 500 °C by SPE, with annealing performed in-situ in a TEM chamber.

Real-Time Analysis Of In-Situ Spectroscopic Ellipsometric Data During Mbe Growth Of III-V Semiconductors

1991 ◽  
Vol 222 ◽  
Author(s):  
B. Johs ◽  
J. L. Edwards ◽  
K. T. Shiralagi ◽  
R. Droopad ◽  
K. Y. Choi ◽  
...  
Keyword(s):  
Real Time ◽  
Optical Constants ◽  
Growth Parameters ◽  
Ex Situ ◽  
Time Analysis ◽  
Mbe Growth ◽  
In Situ Data ◽  
Real Time Analysis

ABSTRACTA modular spectroscopic ellipsometer, capable of both in-situ and ex-situ operation, has been used to measure important growth parameters of GaAs/AIGaAs structures. The ex-situ measurements provided layer thicknesses and compositions of the grown structures. In-situ ellipsometric measurements allowed the determination of growth rates, layer thicknesses, and high temperature optical constants. By performing a regression analysis of the in-situ data in real-time, the thickness and composition of an AIGaAs layer were extracted during the MBE growth of the structure.

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