Detector performance crystallinity and impurity study of cadmium zinc telluride crystals grown from the melt

2001 ◽  
Author(s):  
Haim Hermon ◽  
Michael M. Schieber ◽  
M. Factor ◽  
Tuviah E. Schlesinger ◽  
Ralph B. James ◽  
...  
Keyword(s):  
Cadmium Zinc Telluride ◽  
Zinc Telluride ◽  
Detector Performance ◽  
Cadmium Zinc

Mapping of Large Area Cadmium Zinc Telluride (CZT) Wafers: Apparatus and Methods

1997 ◽  
Vol 487 ◽  
Author(s):  
B. A. Brunett ◽  
J. M. Van Scyoc ◽  
H. Yoon ◽  
T. S. Gilbert ◽  
T. E. Schlesinger ◽  
...  
Keyword(s):  
Transport Properties ◽  
Cadmium Zinc Telluride ◽  
Radiation Detector ◽  
Zinc Telluride ◽  
Hole Transport ◽  
Device Fabrication ◽  
Great Promise ◽  
Large Area ◽  
Detector Performance ◽  
Cadmium Zinc

AbstractCadmium Zinc Telluride (CZT) shows great promise as a semiconductor radiation detector material. CZT possesses advantageous material properties over other radiation detector materials in use today, such as a high intrinsic resistivity and a high cross-section for x and γ-rays. However, presently available CZT is not without limitations. The hole transport properties severely limit the performance of these detectors, and the yield of material possessing adequate electron transport properties is currently much lower than desired. The result of these material deficiencies is a lack of inexpensive CZT crystals of large volume for several radiation detector applications. One approach to help alleviate this problem is to measure the spatial distribution (or map) the electrical properties of large area CZT wafers prior to device fabrication. This mapping can accomplish two goals: identify regions of the wafers suitable for detector fabrication and correlate the distribution of crystalline defects with the detector performance. The results of this characterization can then be used by the crystal manufacturers to optimize their growth processes. In this work, we discuss the design and performance of apparatus for measuring the electrical characteristics of entire CZT wafers (up to 10 cm × 10 cm). The data acquisition and manipulation will be discussed and some typical data will be presented.

Study of impurity segregation, crystallinity, and detector performance of melt-grown cadmium zinc telluride crystals

2002 ◽  
Vol 237-239 ◽  
pp. 2082-2090 ◽  
Author(s):  
M. Schieber ◽  
T.E. Schlesinger ◽  
R.B. James ◽  
H. Hermon ◽  
H. Yoon ◽  
...  
Keyword(s):  
Cadmium Zinc Telluride ◽  
Zinc Telluride ◽  
Detector Performance ◽  
Impurity Segregation ◽  
Cadmium Zinc

Mapping of Large Area Cadmium Zinc Telluride (CZT) Wafers: Apparatus and Methods

1997 ◽  
Vol 484 ◽  
Author(s):  
B. A. Brunett ◽  
J. M. Van Scyoc ◽  
H. Yoon ◽  
T. S. Gilbert ◽  
T. E. Schlesinger ◽  
...  
Keyword(s):  
Transport Properties ◽  
Cadmium Zinc Telluride ◽  
Radiation Detector ◽  
Zinc Telluride ◽  
Hole Transport ◽  
Device Fabrication ◽  
Great Promise ◽  
Large Area ◽  
Detector Performance ◽  
Cadmium Zinc

AbstractCadmium Zinc Telluride (CZT) shows great promise as a semiconductor radiation detector material. CZT possesses advantageous material properties over other radiation detector materials in use today, such as a high intrinsic resistivity and a high cross-section for x and γ-rays. However, presently available CZT is not without limitations. The hole transport properties severely limit the performance of these detectors, and the yield of material possessing adequate electron transport properties is currently much lower than desired. The result of these material deficiencies is a lack of inexpensive CZT crystals of large volume for several radiation detector applications. One approach to help alleviate this problem is to measure the spatial distribution (or map) the electrical properties of large area CZT wafers prior to device fabrication. This mapping can accomplish two goals: identify regions of the wafers suitable for detector fabrication and correlate the distribution of crystalline defects with the detector performance. The results of this characterization can then be used by the crystal manufacturers to optimize their growth processes. In this work, we discuss the design and performance of apparatus for measuring the electrical characteristics of entire CZT wafers (up to 10 cm × 10 cm). The data acquisition and manipulation will be discussed and some typical data will be presented.

scholarly journals Advances in CdZnTeSe for Radiation Detector Applications

Radiation ◽  
2021 ◽  
Vol 1 (2) ◽  
pp. 123-130
Author(s):  
Utpal N. Roy ◽  
Giuseppe S. Camarda ◽  
Yonggang Cui ◽  
Ralph B. James
Keyword(s):  
Grain Boundary ◽  
Cadmium Zinc Telluride ◽  
Radiation Detector ◽  
Zinc Telluride ◽  
High Energy ◽  
Detector Performance ◽  
Wide Range ◽  
Temperature Detector ◽  
Te Inclusions ◽  
Cadmium Zinc

Detection of X- and gamma-rays is essential to a wide range of applications from medical imaging to high energy physics, astronomy, and homeland security. Cadmium zinc telluride (CZT) is the most widely used material for room-temperature detector applications and has been fulfilling the requirements for growing detection demands over the last three decades. However, CZT still suffers from the presence of a high density of performance-limiting defects, such as sub-grain boundary networks and Te inclusions. Cadmium zinc telluride selenide (CZTS) is an emerging material with compelling properties that mitigate some of the long-standing issues seen in CZT. This new quaternary is free from sub-grain boundary networks and possesses very few Te inclusions. In addition, the material offers a high degree of compositional homogeneity. The advancement of CZTS has accelerated through investigations of the material properties and virtual Frisch-grid (VFG) detector performance. The excellent material quality with highly reduced performance-limiting defects elevates the importance of CZTS as a potential replacement to CZT at a substantially lower cost.

Characterization of Extended Defects Observed in Cadmium Zinc Telluride (CZT) Crystal

2015 ◽  
Vol 1792 ◽  
Author(s):  
Samuel Uba ◽  
Stephen Babalola ◽  
Anwar Hossain ◽  
Ralph James
Keyword(s):  
Electrical Properties ◽  
Grain Boundaries ◽  
Cadmium Zinc Telluride ◽  
Zinc Telluride ◽  
High Energy ◽  
Extended Defects ◽  
Detector Performance ◽  
Te Inclusions ◽  
Czt Detectors ◽  
Cadmium Zinc

ABSTRACTCadmium Zinc Telluride (CZT) semiconductor crystal properties have been studied extensively with a focus on correlations to their radiation detector performance. The need for defect-free CZT crystal is imperative for optimal detector performance. Extended defects like Tellurium (Te) inclusions, twins, sub-grain boundaries, and dislocations are common defects found in CZT crystals; they alter the electrical properties and, therefore, the crystal's response to high energy radiation. In this research we studied the extended defects in CZT crystals from two separate ingots grown using the low-pressure Bridgman technique. We fabricated several detectors cut from wafers of two separate ingots by dicing, lapping, polishing, etching and applying gold metal contacts on the main surfaces of the crystals. Using infrared (IR) transmission microscope we analyzed the defects observed in the CZT detectors, showing three dimensional scans and plot size distributions of Te inclusions, twins and sub-grain boundaries observed in particular regions of the CZT detectors. We characterized electrical properties of the detectors by measuring bulk resistivity and detector response to gamma radiation. We observed that CZT detectors with more extended defects showed poor opto-electrical properties compared to detectors with fewer defects.

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