Comparison of Y3Al5O12:Ce0.05 phosphor coating methods for white-light-emitting diode on gallium nitride

Author(s):  
Jun-Ho Yum ◽  
Soo-Yeon Seo ◽  
Seonghoon Lee ◽  
Yung-Eun Sung
Author(s):  
K. H. Lee ◽  
S. W. Ricky Lee

In current technology, white light generation from a light emitting diode (LED) can be achieved by combining the lights from three fundamental colors, namely, red, green and blue (RGB), of LEDs or by coating a phosphor layer onto the surface of a LED chip. The first method involving the RGB color mixing technique requires a complicated electrical circuit design for the control of light intensity and uniformity on the three different colors of LEDs and hence increases the costs of manufacturing. The second method is implemented by coating a layer of yellow phosphor on a blue LED chip for white light illumination. The quality of generated white light heavily depends on the packing density, the thickness and the uniformity of the phosphor coating. There have been some coating methods available in the industry. Each one of them has its own pros-n-cons. In the present study, a new yellow phosphor coating method by screen-printing on blue LED arrays is developed. Compared with conventional coating methods, this screen-printing method is considered relatively simple and rather effective. The newly developed method and the results of prototyping are introduced in this paper in detail.


2014 ◽  
Vol 93 ◽  
pp. 264-269 ◽  
Author(s):  
Henryk Teisseyre ◽  
Michal Bockowski ◽  
Toby David Young ◽  
Szymon Grzanka ◽  
Yaroslav Zhydachevskii ◽  
...  

In this communication, the use of gallium nitride doped with beryllium as an efficient converter for white light emitting diode is proposed. Until now beryllium in this material was mostly studied as a potential p-type dopant. Unfortunately, the realization of p-type conductivity in such a way seems impossible. However, due to a very intensive yellow emission, bulk crystals doped with beryllium can be used as light converters. In this communication, it is demonstrated that realisation of such diode is possible and realisation of a colour rendering index is close to that necessary for white light emission.


2012 ◽  
Vol 51 ◽  
pp. 09MH03
Author(s):  
Byoung Wook Kwon ◽  
Dong Ick Son ◽  
Dong-Hee Park ◽  
Heon-Jin Choi ◽  
Won-Kook Choi

2017 ◽  
Vol 41 (18) ◽  
pp. 9826-9839 ◽  
Author(s):  
Boddula Rajamouli ◽  
Rachna Devi ◽  
Abhijeet Mohanty ◽  
Venkata Krishnan ◽  
Sivakumar Vaidyanathan

The red light emitting diode (LED) was fabricated by using europium complexes with InGaN LED (395 nm) and shown digital images, corresponding CIE color coordinates (red region) as well as obtained highest quantum yield of the thin film (78.7%).


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