Micro-optical elements and optoelectronic devices for optical interconnect applications

2001 ◽  
Author(s):  
Mohammad R. Taghizadeh ◽  
Andrew J. Waddie
Keyword(s):  
Optoelectronic Devices ◽  
Optical Interconnect ◽  
Optical Elements

A novel high-refractive index episulfide-thiol polymer for nanoimprinting optical elements

2018 ◽  
Vol 6 (32) ◽  
pp. 8823-8831 ◽  
Author(s):  
Yunhui Tang ◽  
Carlos Pina-Hernandez ◽  
Qijian Niu ◽  
Jun Nie ◽  
Stefano Cabrini
Keyword(s):  
Refractive Index ◽  
Optoelectronic Devices ◽  
High Refractive Index ◽  
Potential Candidate ◽  
Optical Elements ◽  
Optical Polymer

A novel episulfide-thiol optical polymer with a high refractive index (n = 1.707) can be thermally nanoimprinted at 160 °C with nanoscale size resolution showing excellent pattern fidelity and low defectivity, which exhibit the material as a potential candidate for applications in optical and optoelectronic devices.

Near-field scanning optical microscopy

1986 ◽  
Vol 44 ◽  
pp. 642-643
Author(s):  
E. Betzig ◽  
A. Harootunian ◽  
M. Isaacson ◽  
A. Lewis
Keyword(s):  
Near Field ◽  
Optical Microscope ◽  
Visible Radiation ◽  
Field Methods ◽  
Optical Elements ◽  
Optical Region ◽  
Order Of Magnitude ◽  
Nondestructive Imaging ◽  
Scanning Optical Microscopy ◽  
Near Field Scanning

In general, conventional methods of optical imaging are limited in spatial resolution by either the wavelength of the radiation used or by the aberrations of the optical elements. This is true whether one uses a scanning probe or a fixed beam method. The reason for the wavelength limit of resolution is due to the far field methods of producing or detecting the radiation. If one resorts to restricting our probes to the near field optical region, then the possibility exists of obtaining spatial resolutions more than an order of magnitude smaller than the optical wavelength of the radiation used. In this paper, we will describe the principles underlying such "near field" imaging and present some preliminary results from a near field scanning optical microscope (NS0M) that uses visible radiation and is capable of resolutions comparable to an SEM. The advantage of such a technique is the possibility of completely nondestructive imaging in air at spatial resolutions of about 50nm.

Characterization of Rh/Si multilayer structure by HREM and HAADF

1992 ◽  
Vol 50 (1) ◽  
pp. 122-123
Author(s):  
Y. Cheng ◽  
J. Liu ◽  
M.B. Stearns ◽  
D.G. Steams
Keyword(s):  
Normal Incidence ◽  
High Resolution Electron Microscopy ◽  
X Rays ◽  
Beam Direction ◽  
Cross Sectional ◽  
Optical Elements ◽  
Resolution Electron ◽  
Point To Point ◽  
Better Than

The Rh/Si multilayer (ML) thin films are promising optical elements for soft x-rays since they have a calculated normal incidence reflectivity of ∼60% at a x-ray wavelength of ∼13 nm. However, a reflectivity of only 28% has been attained to date for ML fabricated by dc magnetron sputtering. In order to determine the cause of this degraded reflectivity the microstructure of this ML was examined on cross-sectional specimens with two high-resolution electron microscopy (HREM and HAADF) techniques.Cross-sectional specimens were made from an as-prepared ML sample and from the same ML annealed at 298 °C for 1 and 100 hours. The specimens were imaged using a JEM-4000EX TEM operating at 400 kV with a point-to-point resolution of better than 0.17 nm. The specimens were viewed along Si [110] projection of the substrate, with the (001) Si surface plane parallel to the beam direction.

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