Single-crystal silicon nanostructure fabrication by scanning probe lithography and anisotropic wet etching

2001 ◽  
Author(s):  
Kow-Ming Chang ◽  
Kai-Shyang You ◽  
Chia H. Wu ◽  
Jeng Tzong Sheu
Keyword(s):  
Single Crystal ◽  
Single Crystal Silicon ◽  
Wet Etching ◽  
Scanning Probe ◽  
Nanostructure Fabrication ◽  
Crystal Silicon ◽  
Scanning Probe Lithography ◽  
Silicon Nanostructure

25 nm Single-Crystal Silicon Nanowires Fabricated by Anisotropic Wet Etching

2017 ◽  
Vol 17 (2) ◽  
pp. 1525-1529
Author(s):  
Hoang Manh Chu ◽  
Minh Van Nguyen ◽  
Hung Ngoc Vu ◽  
Kazuhiro Hane
Keyword(s):  
Single Crystal ◽  
Silicon Nanowires ◽  
Single Crystal Silicon ◽  
Wet Etching ◽  
Crystal Silicon

Uniform, Axial-Orientation Alignment of One-Dimensional Single-Crystal Silicon Nanostructure Arrays

2005 ◽  
Vol 117 (18) ◽  
pp. 2797-2802 ◽  
Author(s):  
Kuiqing Peng ◽  
Yin Wu ◽  
Hui Fang ◽  
Xiaoyan Zhong ◽  
Ying Xu ◽  
...  
Keyword(s):  
Single Crystal ◽  
Single Crystal Silicon ◽  
Axial Orientation ◽  
Crystal Silicon ◽  
One Dimensional ◽  
Silicon Nanostructure ◽  
Nanostructure Arrays

Wear Resistance of N+-Implanted Silicon Investigated by Scanning Probe Microscopy

1995 ◽  
Vol 117 (4) ◽  
pp. 612-616 ◽  
Author(s):  
T. Miyamoto ◽  
T. Yokohata ◽  
S. Miyake ◽  
D. B. Bogy ◽  
R. Kaneko
Keyword(s):  
Wear Resistance ◽  
Ion Implantation ◽  
Single Crystal ◽  
Single Crystal Silicon ◽  
Scanning Probe ◽  
Concentration Region ◽  
Crystal Silicon ◽  
N Concentration ◽  
Implantation Process ◽  
Ion Implanted

A scanning probe microscope with a 80 nm radius diamond tip was used to investigate the wear resistance of single-crystal silicon and N+-implanted silicon. The N+ implantation conditions were 35 to 150 keV and 5 × 1016 ions/cm2. The N+ concentration depth profile was analyzed by using secondary ion mass spectrometry, and the chemical structure of N+-implanted silicon was also analyzed by using x-ray photoelectron spectroscopy. The following results were obtained. The maximum N+ concentration on the ion-implanted silicon shifted further below the surface and the thickness of the high ion concentration region increased with the implantation energy. The high N+ concentration region using multiple energies of 35–150 keV during the same ion implantation process was wider than that for the N+-implanted silicon using a single energy. The wear resistance of ion-implanted silicon was higher than that of single-crystal silicon. The N+-implanted silicon using multiple energies during the same ion implantation process showed higher wear durability than that of the N+-implanted silicon using a single energy. The Si2p spectrum of the high N+ concentration region implied a structure similar to a Si3N4 film, which resulted in higher wear resistance.

Analysis of Silicon-On-Insulator Structures Formed By Oxygen Ion Implantation

1985 ◽  
Vol 43 ◽  
pp. 300-301
Author(s):  
N. Lewis ◽  
E. L. Hall ◽  
A. Mogro-Campero ◽  
R. P. Love
Keyword(s):  
Ion Implantation ◽  
Single Crystal ◽  
Single Crystal Silicon ◽  
Silicon Layer ◽  
Device Fabrication ◽  
Silicon On Insulator ◽  
High Dose ◽  
Crystal Silicon ◽  
Oxygen Ion ◽  
Oxygen Ion Implantation

The formation of buried oxide structures in single crystal silicon by high-dose oxygen ion implantation has received considerable attention recently for applications in advanced electronic device fabrication. This process is performed in a vacuum, and under the proper implantation conditions results in a silicon-on-insulator (SOI) structure with a top single crystal silicon layer on an amorphous silicon dioxide layer. The top Si layer has the same orientation as the silicon substrate. The quality of the outermost portion of the Si top layer is important in device fabrication since it either can be used directly to build devices, or epitaxial Si may be grown on this layer. Therefore, careful characterization of the results of the ion implantation process is essential.

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