Open-contact failure detection of via holes by using voltage contrast

Chain Structure Defect Location by Focused Ion Beam Passive Voltage Contrast

Microscopy and Microanalysis ◽

10.1017/s1431927600035091 ◽

2000 ◽

Vol 6 (S2) ◽

pp. 520-521

Author(s):

B.B. Rossie ◽

T.L. Shofner ◽

S.R. Brown ◽

D.M. Shuttleworth ◽

D. Nguyen

Keyword(s):

Electron Microscopy ◽

Focused Ion Beam ◽

Ion Beam ◽

Chain Structure ◽

Specimen Preparation ◽

Auger Analysis ◽

Open Contact ◽

Defect Location ◽

In Series ◽

Voltage Contrast

Defects present in microelectronic devices are often present in test structures as well. This makes test structures useful in identifying defect mechanisms. Chain patterns consists of thousands of contacts and plugs in series. The presence of an open contact in a chain can be detected by a loss of electrical continuity. The specific site of an open contact is difficult to locate for further analysis.The application of the focused ion beam (FIB) for passive voltage contrast (PVC) provides an effective method for contact defect location. Once the defect is located the FIB facilitates efficient site-specific specimen preparation for scanning electron microscopy (SEM), transmission electron microscopy (TEM) or Auger analysis.The FIB is capable of PVC analysis by distinguishing electrically isolated conductors from grounded conductors. Isolated conductors charge as a result of ion beam interaction. Once charged, the quantity of secondary electrons available for detection is greatly reduced.

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Electrical contact failure detection based on dynamic resistance principle component analysis and RBF neural network

2016 International Conference on Condition Monitoring and Diagnosis (CMD) ◽

10.1109/cmd.2016.7757897 ◽

2016 ◽

Author(s):

M. Khoddam ◽

J. Sadeh ◽

P. Pourmohamadiyan

Keyword(s):

Neural Network ◽

Principle Component Analysis ◽

Rbf Neural Network ◽

Electrical Contact ◽

Failure Detection ◽

Component Analysis ◽

Dynamic Resistance ◽

Principle Component ◽

Contact Failure

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Application of photoemission microscopy (PEM) and Computer Aided Design (CAD) navigation system in localization of high side power switch open contact failure

Proceedings of the 20th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) ◽

10.1109/ipfa.2013.6599131 ◽

2013 ◽

Author(s):

Lee Nean Sern

Keyword(s):

Navigation System ◽

Computer Aided Design ◽

Open Contact ◽

Power Switch ◽

High Side ◽

Computer Aided ◽

Aided Design ◽

Contact Failure

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Charging microscopy and cathodoluminescence imaging of semi-insulating gallium arsenide

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s042482010014542x ◽

1986 ◽

Vol 44 ◽

pp. 816-817

Author(s):

T.C. Sheu ◽

S. Myhajlenko ◽

D. Davito ◽

J.L. Edwards ◽

R. Roedel ◽

...

Keyword(s):

Integrated Circuits ◽

Secondary Electron ◽

Crystal Defects ◽

Device Performance ◽

Gaas Wafer ◽

Surface Charging ◽

Gaas Substrates ◽

Voltage Contrast ◽

Cathodoluminescence Imaging ◽

Scanning Electron

Liquid encapsulated Czochralski (LEC) semi-insulating (SI) GaAs has applications in integrated optics and integrated circuits. Yield and device performance is dependent on the homogeniety of the wafers. Therefore, it is important to characterise the uniformity of the GaAs substrates. In this respect, cathodoluminescence (CL) has been used to detect the presence of crystal defects and growth striations. However, when SI GaAs is examined in a scanning electron microscope (SEM), there will be a tendency for the surface to charge up. The surface charging affects the backscattered and secondary electron (SE) yield. Local variations in the surface charge will give rise to contrast (effectively voltage contrast) in the SE image. This may be associated with non-uniformities in the spatial distribution of resistivity. Wakefield et al have made use of “charging microscopy” to reveal resistivity variations across a SI GaAs wafer. In this work we report on CL imaging, the conditions used to obtain “charged” SE images and some aspects of the contrast behaviour.

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