Oxidized porous silicon waveguides losses

2001 ◽  
Author(s):  
G. Lamedica ◽  
M. Balucani ◽  
V. Bondarenko ◽  
A. Ferrari
Keyword(s):  
Porous Silicon ◽  
Silicon Waveguides ◽  
Oxidized Porous Silicon

Bending properties in oxidized porous silicon waveguides

2000 ◽  
Vol 3 (5-6) ◽  
pp. 351-355 ◽  
Author(s):  
M Balucani ◽  
V Bondarenko ◽  
L Dolgyi ◽  
G Lamedica ◽  
A Ricciardelli ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Bending Properties ◽  
Silicon Waveguides ◽  
Oxidized Porous Silicon

Optical gain in dye-impregnated oxidized porous silicon waveguides

2006 ◽  
Vol 89 (1) ◽  
pp. 011107 ◽  
Author(s):  
C. J. Oton ◽  
D. Navarro-Urrios ◽  
N. E. Capuj ◽  
M. Ghulinyan ◽  
L. Pavesi ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Optical Gain ◽  
Silicon Waveguides ◽  
Oxidized Porous Silicon

Optical gain in oxidized porous silicon waveguides impregnated with a laser dye

2007 ◽  
Vol 4 (6) ◽  
pp. 2145-2149
Author(s):  
C. J. Oton ◽  
D. Navarro-Urrios ◽  
M. Ghulinyan ◽  
N. E. Capuj ◽  
S. González-Pérez ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Optical Gain ◽  
Laser Dye ◽  
Silicon Waveguides ◽  
Oxidized Porous Silicon

scholarly journals Anisotropic polarization memory in thermally oxidized porous silicon

2000 ◽  
Vol 77 (15) ◽  
pp. 2316-2318 ◽  
Author(s):  
Hideki Koyama ◽  
Philippe M. Fauchet
Keyword(s):  
Porous Silicon ◽  
Oxidized Porous Silicon

Optical gain in dye-doped polymer waveguides using oxidized porous silicon cladding

2007 ◽  
Author(s):  
Daniel Navarro-Urrios ◽  
Mher Ghulinyan ◽  
Paolo Bettotti ◽  
Néstor Capuj ◽  
Claudio J. Oton ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Optical Gain ◽  
Polymer Waveguides ◽  
Oxidized Porous Silicon ◽  
Doped Polymer

Observation of quantum-confined luminescence in partially oxidized porous silicon

2000 ◽  
Vol 80 (4) ◽  
pp. 679-689 ◽  
Author(s):  
Giampiero Amato ◽  
L. Boarino ◽  
D. Midellino ◽  
A. M. Rossi
Keyword(s):  
Porous Silicon ◽  
Oxidized Porous Silicon ◽  
Quantum Confined

Strongly Superlinear Light Emission and Large Induced Absorption in Oxidized Porous Silicon Films

1998 ◽  
Vol 536 ◽  
Author(s):  
H. Koyama ◽  
P. M. Fauchet
Keyword(s):  
Porous Silicon ◽  
Thermal Effects ◽  
Light Emission ◽  
Laser Intensity ◽  
Excitation Intensity ◽  
Silicon Films ◽  
Free Standing ◽  
Induced Absorption ◽  
Cw Laser ◽  
Oxidized Porous Silicon

AbstractThe optical properties of oxidized free-standing porous silicon films excited by a cw laser have been investigated. It is found that samples oxidized at 800–950 °C show a strongly superlinear light emission at an excitation intensity of ∼10 W/cm2. This emission has a peak at 900–1100 nm and shows a blueshift as the oxidation temperature is increased. These samples also show a very large induced absorption, where the transmittance is found to decrease reversibly by ≤99.7 %.The induced absorption increases linearly with increasing pump laser intensity. Both the superlinear emission and the large induced absorption are quenched when the samples are attached to materials with a higher thermal conductivity, suggesting that laser-induced thermal effects are responsible for these phenomena.

Sign in / Sign up

Export Citation Format

Share Document