Excimer-laser-assisted thrombolysis: the effect of laser fluence, repetition rate, and catheter size

Author(s):  
Thanassis Papaioannou ◽  
Oleg Sorokoumov ◽  
Kevin D. Taylor ◽  
Warren S. Grundfest
1991 ◽  
Vol 236 ◽  
Author(s):  
P. Heszler ◽  
P. Mogyorósi ◽  
J.O. Carlsson

AbstractThe origin of the ArF excimer laser induced luminescence from a WF6/H2/Ar gas mixture was investigated. The experiments prove that the emission originates from excited W clusters with a size of about 10-20 nm. The influence of the H2 and Ar concentrations, the laser fluence and the repetition rate on the light intensity was studied.


1996 ◽  
Vol 451 ◽  
Author(s):  
T. Shimizu ◽  
M. Murahara

ABSTRACTA Fluorocarbon resin surface was selectively modified by irradiation with a ArF laser beam through a thin layer of NaAlO2, B(OH)3, or H2O solution to give a hydrophilic property. As a result, with low fluence, the surface was most effectively modified with the NaAlO2 solution among the three solutions. However, the contact angle in this case changed by 10 degrees as the fluence changed only 1mJ/cm2. When modifying a large area of the surface, high resolution displacement could not be achieved because the laser beam was not uniform in displacing functional groups. Thus, the laser fluence was successfully made uniform by homogenizing the laser beam; the functional groups were replaced on the fluorocarbon resin surface with high resolution, which was successfully modified to be hydrophilic by distributing the laser fluence uniformly.


1995 ◽  
Vol 66 (11) ◽  
pp. 5162-5164 ◽  
Author(s):  
Tatsumi Goto ◽  
Koji Kakizaki ◽  
Shigeyuki Takagi ◽  
Noboru Okamoto ◽  
Saburo Sato ◽  
...  

2001 ◽  
Vol 685 ◽  
Author(s):  
Minghong Lee ◽  
Seungjae Moon ◽  
Mutsuko Hatano ◽  
Costas P. Grigoropoulos

AbstractA new double laser recrystallization technique that can produce lateral grains of tens of micrometers is presented. A nanosecond laser (excimer or Nd:YLF laser) and a pulse modulated Ar+ laser are used in the experiment. The effect of different parameters on lateral grain growth is investigated. These parameters include the time delay between the two lasers, the excimer laser fluence, the Ar+ laser power and the pulse duration. This process has wide process window and is insensitive to both the excimer laser fluence and the Ar+ laser power fluctuations. Preheating and melting of the a-Si film with the Ar+ laser before firing the excimer laser is found to be necessary for inducting lateral grain growth. The transient excimer laser irradiation is believed to generate nucleation sites for initiating the subsequent lateral grain growth. The solidification dynamics of the process is probed by high spatial and temporal resolution laser flash photography. A lateral solidification velocity of about 10 m/s is observed.


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