Singular beams, spin-orbit interaction, and birefringence in bent optical fibers

2001 ◽  
Author(s):  
Constantin N. Alexeyev ◽  
Alexander V. Volyar
Keyword(s):  
Optical Fibers ◽  
Orbit Interaction ◽  
Spin Orbit ◽  
Spin Orbit Interaction

scholarly journals Photon-phonon spin-orbit interaction in optical fibers

Optica ◽  
2021 ◽  
Author(s):  
Maxim Yavorsky ◽  
Dmitriy Vikulin ◽  
C. Alexeyev ◽  
Vladimir Belotelov
Keyword(s):  
Optical Fibers ◽  
Orbit Interaction ◽  
Spin Orbit ◽  
Spin Orbit Interaction

scholarly journals Enhanced spin orbit interaction of light in highly confining optical fibers for mode division multiplexing

2019 ◽  
Vol 10 (1) ◽  
Author(s):  
P. Gregg ◽  
P. Kristensen ◽  
A. Rubano ◽  
S. Golowich ◽  
L. Marrucci ◽  
...  
Keyword(s):  
Angular Momentum ◽  
Optical Fibers ◽  
High Performance ◽  
Orbit Interaction ◽  
Spin Orbit ◽  
Spin Orbit Interaction ◽  
Network Nodes ◽  
Mode Division Multiplexing ◽  
Telecommunications Network ◽  
Long Fibers

Abstract Light carries both orbital angular momentum (OAM) and spin angular momentum (SAM), related to wavefront rotation and polarization, respectively. These are usually approximately independent quantities, but they become coupled by light’s spin-orbit interaction (SOI) in certain exotic geometries and at the nanoscale. Here we reveal a manifestation of strong SOI in fibers engineered at the micro-scale and supporting the only known example of propagating light modes with non-integer mean OAM. This enables propagation of a record number (24) of states in a single optical fiber with low cross-talk (purity > 93%), even as tens-of-meters long fibers are bent, twisted or otherwise handled, as fibers are practically deployed. In addition to enabling the investigation of novel SOI effects, these light states represent the first ensemble with which mode count can be potentially arbitrarily scaled to satisfy the exponentially growing demands of high-performance data centers and supercomputers, or telecommunications network nodes.

scholarly journals Depolarization of Light in Optical Fibers: Effects of Diffraction and Spin-Orbit Interaction

Fibers ◽  
2021 ◽  
Vol 9 (6) ◽  
pp. 34
Author(s):  
Nikolai I. Petrov
Keyword(s):  
Optical Fibers ◽  
Berry Phase ◽  
Polarization Plane ◽  
Orbit Interaction ◽  
Spin Orbit ◽  
Tensor Polarization ◽  
Spin Orbit Interaction ◽  
Graded Index ◽  
Depolarization Of Light ◽  
Light Beams

Polarization is measured very often to study the interaction of light and matter, so the description of the polarization of light beams is of both practical and fundamental interest. This review discusses the polarization properties of structured light in multimode graded-index optical fibers, with an emphasis on the recent advances in the area of spin-orbit interactions. The basic physical principles and properties of twisted light propagating in a graded index fiber are described: rotation of the polarization plane, Laguerre–Gauss vector beams with polarization-orbital angular momentum entanglement, splitting of degenerate modes due to spin-orbit interaction, depolarization of light beams, Berry phase and 2D and 3D degrees of polarizations, etc. Special attention is paid to analytical methods for solving the Maxwell equations of a three-component field using perturbation analysis and quantum mechanical approaches. Vector and tensor polarization degrees for the description of strongly focused light beams and their geometrical interpretation are also discussed.

Spin-orbit interaction and evolution of optical eddies in perturbed weakly directing optical fibers

2002 ◽  
Vol 93 (4) ◽  
pp. 588-597 ◽  
Author(s):  
K. N. Alekseev ◽  
A. V. Volyar ◽  
T. A. Fadeeva
Keyword(s):  
Optical Fibers ◽  
Orbit Interaction ◽  
Spin Orbit ◽  
Spin Orbit Interaction

Spin generation and manipulation based on spin-orbit interaction in semiconductors

2017 ◽  
Author(s):  
J. Nitta
Keyword(s):  
Magnetic Field ◽  
Orbit Interaction ◽  
Degree Of Freedom ◽  
Effective Magnetic Field ◽  
Spin Orbit ◽  
Spin Orbit Interaction ◽  
Spin Degree ◽  
Dimensional Electron Gas ◽  
Spin Orbit Interactions ◽  
Electrical Generation

This chapter focuses on the electron spin degree of freedom in semiconductor spintronics. In particular, the electrostatic control of the spin degree of freedom is an advantageous technology over metal-based spintronics. Spin–orbit interaction (SOI), which gives rise to an effective magnetic field. The essence of SOI is that the moving electrons in an electric field feel an effective magnetic field even without any external magnetic field. Rashba spin–orbit interaction is important since the strength is controlled by the gate voltage on top of the semiconductor’s two-dimensional electron gas. By utilizing the effective magnetic field induced by the SOI, spin generation and manipulation are possible by electrostatic ways. The origin of spin-orbit interactions in semiconductors and the electrical generation and manipulation of spins by electrical means are discussed. Long spin coherence is achieved by special spin helix state where both strengths of Rashba and Dresselhaus SOI are equal.

scholarly journals Dirac nodal lines protected against spin-orbit interaction in IrO2

2019 ◽  
Vol 3 (6) ◽  
Author(s):  
J. N. Nelson ◽  
J. P. Ruf ◽  
Y. Lee ◽  
C. Zeledon ◽  
J. K. Kawasaki ◽  
...  
Keyword(s):  
Orbit Interaction ◽  
Spin Orbit ◽  
Spin Orbit Interaction ◽  
Nodal Lines

scholarly journals Low-symmetry nanowire cross-sections for enhanced Dresselhaus spin-orbit interaction

2021 ◽  
Vol 103 (19) ◽  
Author(s):  
Miguel J. Carballido ◽  
Christoph Kloeffel ◽  
Dominik M. Zumbühl ◽  
Daniel Loss
Keyword(s):  
Cross Sections ◽  
Orbit Interaction ◽  
Spin Orbit ◽  
Spin Orbit Interaction ◽  
Low Symmetry

scholarly journals Strong and tunable spin–orbit interaction in a single crystalline InSb nanosheet

2021 ◽  
Vol 5 (1) ◽  
Author(s):  
Yuanjie Chen ◽  
Shaoyun Huang ◽  
Dong Pan ◽  
Jianhong Xue ◽  
Li Zhang ◽  
...  
Keyword(s):  
Layer Structure ◽  
Orbit Interaction ◽  
Spin Orbit ◽  
Device Layer ◽  
Physical Origin ◽  
Quantum Devices ◽  
Spin Orbit Interaction ◽  
Topological Quantum ◽  
Narrow Bandgap ◽  
Dual Gate

AbstractA dual-gate InSb nanosheet field-effect device is realized and is used to investigate the physical origin and the controllability of the spin–orbit interaction in a narrow bandgap semiconductor InSb nanosheet. We demonstrate that by applying a voltage over the dual gate, efficiently tuning of the spin–orbit interaction in the InSb nanosheet can be achieved. We also find the presence of an intrinsic spin–orbit interaction in the InSb nanosheet at zero dual-gate voltage and identify its physical origin as a build-in asymmetry in the device layer structure. Having a strong and controllable spin–orbit interaction in an InSb nanosheet could simplify the design and realization of spintronic deceives, spin-based quantum devices, and topological quantum devices.

Sign in / Sign up

Export Citation Format

Share Document