Preparation and characterization of excimer-laser-ablation-derived lead zirconate titanate thin films for microactuators

2001 ◽  
Author(s):  
Zhanjie Wang ◽  
Ryutaro Maeda ◽  
Hiroyuki Kokawa
1992 ◽  
Vol 7 (9) ◽  
pp. 2521-2529 ◽  
Author(s):  
D. Roy ◽  
S.B. Krupanidhi

Lead zirconate titanate (PZT) thin films were prepared by excimer laser ablation on platinum coated silicon substrates. The composition of the films showed dependence on the fluence at low energy densities (<2 J/cm2), and less dependence on the ablation fluence was observed beyond a fluence of 2 J/cm2. A correlation among the fluence, ablation pressure, and substrate temperature has been established. Crystalline perovskite PZT films showed a dielectric constant of 800–1000, a remnant polarization of 32 μC/cm2, and a coercive field of 130 kV/cm. Films showed fatigue behavior that may be used in a device, and a close comparison of fatigue behavior between the films deposited at different energy densities indicated a better fatigue behavior for a fluence of 4 J/cm2.


1998 ◽  
Vol 526 ◽  
Author(s):  
Ashok Kumar ◽  
M.R. Alam

AbstractPb(ZrxTi1-x)O3 (lead zirconate titanate or PZT) ferroelectric thin film capacitors are of considerable interest for the realization of memory devices such as nonvolatile random access memories (NVRAMs). The PZT capacitors were prepared on platinized silicon Pt/(100)Si using conducting oxide LaxSr1-xCoO3 (lanthanum strontium cobalt oxide or LSCO) as electrodes. The PZT and LSCO thin films were deposited by the KrF excimer laser ablation technique. The optimum preparation conditions such as oxygen pressure, laser energy influence and substrate temperature were investigated. The PZT and LSCO films grown on Pt/(100)Si are polycrystalline. The crystallographic properties of the films were determined using X-ray diffractometer (XRD) method. The electrical characterizations of the films including hysteresis loop, fatigue, and retention properties were determined by the RT66A Standardized Ferroelectric Test System.


1991 ◽  
Vol 243 ◽  
Author(s):  
Toshio Ogawa ◽  
Hideo Kidoh ◽  
Hideyuki Yashima ◽  
Akiharu Morimoto ◽  
Tatsuo Shimizu

AbstractLead-zirconate-titanate films were prepared by excimer laser ablation. The coercive field of films deposited on MgO substrates with an electrode was lower than that of films deposited on sapphire substrates. Laser fluence influenced the grain and crystalline size, resulting in a change in the Ec. Film thicknesses were varied over a range from 0.3 to 2.41μm, with the thinnest film showing a large remanent polarization even at an applied effective voltage of 5V.


1990 ◽  
Vol 200 ◽  
Author(s):  
C. K. Chiang ◽  
L. P. Cook ◽  
P. K. Schenck ◽  
P. S. Brody ◽  
J. M. Benedetto

ABSTRACTLead zirconate-titanate (PZT) thin films were prepared by the laser ablation technique. The PZT (Zr/Ti=53/47) target was irradiated using a focused q-switched Nd:YAG laser (15 ns, 100 mJ at 1.064 μ;m). The as-deposited films were amorphous as indicated by X-ray powder patterns, but crystallized readily with brief annealing above 650°C. The dielectric constant and the resistivity of the crystallized films were studied using a parallel-plate type capacitor structure.


1997 ◽  
Vol 307 (1-2) ◽  
pp. 54-59 ◽  
Author(s):  
A.P. Caricato ◽  
G. Leggieri ◽  
A. Luches ◽  
A. Perrone ◽  
E. Gyorgy ◽  
...  

1999 ◽  
Vol 38 (Part 1, No. 6A) ◽  
pp. 3600-3603 ◽  
Author(s):  
Tomoyuki Sakoda ◽  
Katsuhiro Aoki ◽  
Yukio Fukuda

1999 ◽  
Vol 19 (6-7) ◽  
pp. 1403-1407 ◽  
Author(s):  
Aiying Wu ◽  
Paula M. Vilarinho ◽  
Isabel M.Miranda Salvado ◽  
João L. Baptista ◽  
C.M. de Jesus ◽  
...  

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