Characterization of ultrathin gate dielectrics using combined grazing x-ray reflectance and spectroscopic ellipsometry

2001 ◽  
Author(s):  
Pierre Boher ◽  
Jean-Philippe Piel ◽  
Patrick Evard ◽  
Christophe Defranoux ◽  
Jean-Louis P. Stehle
Keyword(s):  
Spectroscopic Ellipsometry ◽  
Gate Dielectrics ◽  
X Ray

Precise characterization of ultrathin nitride/oxide gate dielectrics by grazing x-ray reflectance and spectroscopic ellipsometry

1999 ◽  
Vol 592 ◽  
Author(s):  
Pierre Boher ◽  
Jean Philippe Piel ◽  
Jean Louis Stehle
Keyword(s):  
Integrated Circuits ◽  
Spectroscopic Ellipsometry ◽  
Gate Dielectrics ◽  
Structural Models ◽  
Visible Range ◽  
X Ray ◽  
Precise Characterization ◽  
Deep Uv ◽  
Nitride Oxide

ABSTRACTPrecise characterization of nitride/oxide gate structures becomes a challenging task due to the very thin thickness (<3-4nm), which will be needed in the next generation integrated circuits. Conventional techniques such as spectroscopic ellipsometry in the visible range becomes difficult to apply because of the great correlation between thickness and optical indices. To overcome this problem the following strategy is applied. First, grazing x-ray reflectance is used on all the samples to extract the different layer thicknesses using a simple model. Second, spectroscopi ellipsometry from deep UV 190nm to 850nm is applied and the results fitted with the structural models deduced from the x-ray results. In this conditions the nitrogen content of the films can be precisely determined. This kind of analysis has been made on a series of nitride/oxide gate structures with variable thicknesses and degree of nitridation. Regression results are discussed and compared to x-ray photoemission results obtained on the same samples.

Precise Characterization of Resists and Thin Gate Dielectrics in the VUV Range for 157nm Lithography

2000 ◽  
Vol 636 ◽  
Author(s):  
Pierre Boher ◽  
Patrick Evrard ◽  
Jean Philippe Piel ◽  
Christophe Defranoux ◽  
Jean Louis Stehlé
Keyword(s):  
Thin Film ◽  
Layer Thickness ◽  
Spectroscopic Ellipsometry ◽  
Water Contamination ◽  
Gate Dielectrics ◽  
Wavelength Region ◽  
Interface Diffusion ◽  
X Ray ◽  
Precise Characterization

AbstractSpectroscopic ellipsometry is one of the most important tools for thin film metrology. It is now intensively used in microelectronics and especially for the microlithographic applications. Instrumentation for the next generation of VUV lithography at 157nm requires special optical setup since oxygen and water are extremely absorbing below 190nm. Recently a new ellipsometer included in a purged glove box to reduce the oxygen and water contamination in the part per million range has been developed. In the VUV range, roughness and interface diffusion become critical since the layer thickness is generally reduced. An independent characterization technique like the grazing x-ray reflectance is then extremely complementary to ellipsometry in this wavelength region. The present paper presents recent results on up to date lithography samples combining the two characterization techniques. Photoresists and gate dielectrics are successively examined.

Characterization of ultrathin gate dielectrics by grazing X-ray reflectance and VUV spectroscopic ellipsometry on the same instrument

2002 ◽  
Vol 303 (1) ◽  
pp. 167-174 ◽  
Author(s):  
Pierre Boher ◽  
Patrick Evrard ◽  
Jean Philippe Piel ◽  
Jean Louis Stehle
Keyword(s):  
Spectroscopic Ellipsometry ◽  
Gate Dielectrics ◽  
X Ray

Vacuum UV Spectroscopic Ellipsometry and X-Ray Reflectance Combined on the same Platform for the Characterization of High-k Gate Dielectrics

2019 ◽  
Vol 6 (1) ◽  
pp. 179-189
Author(s):  
Christophe Defranoux ◽  
Alexis Bondaz ◽  
Laurent Kitzinger ◽  
Jean Philippe Piel
Keyword(s):  
Spectroscopic Ellipsometry ◽  
Gate Dielectrics ◽  
X Ray ◽  
High K ◽  
Vacuum Uv

Combined characterization of conductive materials by infrared spectroscopic ellipsometry and grazing X-ray reflectance

1998 ◽  
Vol 319 (1-2) ◽  
pp. 67-72 ◽  
Author(s):  
Pierre Boher ◽  
Michel Luttmann ◽  
Jean Louis Stehle ◽  
Louis Hennet
Keyword(s):  
Spectroscopic Ellipsometry ◽  
X Ray ◽  
Conductive Materials ◽  
Infrared Spectroscopic

Combine Spectroscopic Ellipsometry and Grazing X-ray Reflectance for Fine Characterization of Complex Epitaxial Structures

1995 ◽  
Vol 405 ◽  
Author(s):  
P. Boher ◽  
J. L. Stehle
Keyword(s):  
Complex Systems ◽  
Spectroscopic Ellipsometry ◽  
Fourier Transformation ◽  
Structural Information ◽  
Multilayer Mirrors ◽  
Reflectance Curve ◽  
X Ray

AbstractSpectroscopic Ellipsometry (SE) and Grazing X-ray Reflectance (GXR) techniques are applied on different III-V epitaxial structures in order to extract accurately their structural information. Thickness information are obtained directly from Fourier transformation of the GXR spectra and confirmed by simulation of the reflectance curve. Compositions are deduced from SE regression using GXR thickness as input values. Examples on monolayer and bilayer structures are first remembered. Then the potentiality of the method is demonstrated to more complex systems (multilayer mirrors and HEMT structures).

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