Aging studies of sol-gel-derived thin film single-layer and multilayer dielectric mirrors

2001 ◽  
Author(s):  
Hazel A. McInnes ◽  
Nicholas J. Bazin ◽  
James E. Andrew ◽  
A. J. Morris
2015 ◽  
Vol 749 ◽  
pp. 308-312 ◽  
Author(s):  
Shafaq Mardhiyana Mohamat Kasim ◽  
Nor Azira Akma Shaari ◽  
Raudah Abu Bakar ◽  
Sukreen Hana Herman

Single layer of titanium dioxide (TiO2) is common metal oxide in fabricating memristor device. In this study, two types of memristor with composite metal oxide thin films will be demonstrated. The two types of memristor are titanium dioxide (TiO2) thin film coated on zinc oxide (ZnO) thin film and ZnO coated on TiO2 thin film. Sol-gel spin coating method was to coat metal oxide thin film and sputtering method for depositing the metal contact. Platinum (Pt) was selected as the top electrode and indium tin oxide (ITO) as the bottom electrode. The electrical characteristics were defined by performing I-V measurement using two point probe equipment. I-V characteristics showed shape of pinched hysteresis loop for both samples. Sample with TiO2 coated on ZnO has slightly higher Roff/Ron ratio than sample ZnO coated on TiO2 which means it more memristive than another one. The cross-section of sample with TiO2 coated on ZnO had been performed as well by using Field-Emission Scanning Electron Microscopy (FESEM).


2015 ◽  
Vol 6 ◽  
pp. 112-123
Author(s):  
A A Akombor ◽  
M D Tyona ◽  
J SA Adelabu

Optogeometric properties of La 2 O 3 (Lanthanum Oxide) thin films prepared by sol-gel technique have been investigated. Characterization was derived by M-line spectroscopy, X-ray diffractometry and waveguide Raman Spectroscopy. M-line spectroscopy measurements revealed a refractive index of 1.592±0.001 on Pyrex substrate for a wavelength of 543.4nm and thin film thickness of 850nm and 1.589±0.001 on silicon wafer and thickness of single layer is between 40 and 60nm. X-ray diffractrometry has shown that the film has monoclinic structure. Waveguide Raman Spectroscopy has revealed a mixture of La 2 O 3 and La 2 O 2 CO 3 (Lanthanum Oxide Carbonate) which are mainly nanocrystalline and polycrystalline respectively. The research has shown that the La 2 O 3 thin films produced can be used as a planar optical waveguide. The results obtained are comparable with the works of other scientists using different measurement techniques.


Author(s):  
Jong-Guk Park ◽  
Dae-Woo Jeon ◽  
Mi-Jai Lee ◽  
Tea-Young Lim ◽  
Jonghee Hwang ◽  
...  

1999 ◽  
Vol 606 ◽  
Author(s):  
Keishi Nishio ◽  
Jirawat Thongrueng ◽  
Yuichi Watanabe ◽  
Toshio Tsuchiya

AbstructWe succeeded in the preparation of strontium-barium niobate (Sr0.3Ba0.7Nb2O6 : SBN30)that have a tetragonal tungsten bronze type structure thin films on SrTiO3 (100), STO, or La doped SrTiO3 (100), LSTO, single crystal substrates by a spin coating process. LSTO substrate can be used for electrode. A homogeneous coating solution was prepared with Sr and Ba acetates and Nb(OEt)5 as raw materials, and acetic acid and diethylene glycol monomethyl ether as solvents. The coating thin films were sintered at temperature from 700 to 1000°C for 10 min in air. It was confirmed that the thin films on STO substrate sintered above 700°C were in the epitaxial growth because the 16 diffraction spots were observed on the pole figure using (121) reflection. The <130> and <310> direction of the thin film on STO were oriented with the c-axis in parallel to the substrate surface. However, the diffraction spots of thin film on LSTO substrate sintered at 700°C were corresponds to the expected pattern for (110).


Author(s):  
Dong XU ◽  
Qi SONG ◽  
Ke ZHANG ◽  
Hong-Xing XU ◽  
Yong-Tao YANG ◽  
...  
Keyword(s):  
Sol Gel ◽  

2018 ◽  
Vol 15 (2) ◽  
pp. 188-196 ◽  
Author(s):  
Chengpeng Xu ◽  
Shengying Ye ◽  
Xiaolei Cui ◽  
Quan Zhang ◽  
Yan Liang

Background: Improper storage and raw materials make peanut oil susceptible to Aflatoxin B1 (AFB1). The semiconductor TiO2 photocatalysis technology is an effective technology which is widely used in sewage treatment, environmental protection and so on. Moreover, the photocatalytic efficiency can be improved by doping I. Method: The experiment is divided into two parts. In the first part, supported TiO2 thin film (STF) was prepared on the quartz glass tube (QGT) by the sol-gel and calcination method and the supported iodine doped supported TiO2 thin film (I-STF) was synthesized using potassium iodate solution. In the second part, the photocatalytic degradation of AFB1 was performed in a self-made photocatalytic reactor. The AFB1 was detected by ELISA kit. Results: The photocatalytic degradation of AFB1 has been proven to follow pseudo first-order reaction kinetics well (R2 > 0.95). The maximum degradation rate of 81.96%, which was reached at the optimum iodine concentration of 0.1mol/L, was 11.38% higher than that with undoped STF. The doping of iodine reduces the band-gap of TiO2, thereby increasing the photocatalytic response range. The proportion of Ti4+ in I-STF has decreased, which means that Ti4+ are replaced by I. The I-STF prepared at iodine concentration of 0.1mol/L has good photocatalytic properties.


Electronics ◽  
2021 ◽  
Vol 10 (2) ◽  
pp. 200
Author(s):  
Do Won Kim ◽  
Hyeon Joong Kim ◽  
Changmin Lee ◽  
Kyoungdu Kim ◽  
Jin-Hyuk Bae ◽  
...  

Sol-gel processed SnO2 thin-film transistors (TFTs) were fabricated on SiO2/p+ Si substrates. The SnO2 active channel layer was deposited by the sol-gel spin coating method. Precursor concentration influenced the film thickness and surface roughness. As the concentration of the precursor was increased, the deposited films were thicker and smoother. The device performance was influenced by the thickness and roughness of the SnO2 active channel layer. Decreased precursor concentration resulted in a fabricated device with lower field-effect mobility, larger subthreshold swing (SS), and increased threshold voltage (Vth), originating from the lower free carrier concentration and increase in trap sites. The fabricated SnO2 TFTs, with an optimized 0.030 M precursor, had a field-effect mobility of 9.38 cm2/Vs, an SS of 1.99, an Ion/Ioff value of ~4.0 × 107, and showed enhancement mode operation and positive Vth, equal to 9.83 V.


2021 ◽  
Vol 46 (24) ◽  
pp. 12961-12980
Author(s):  
Amanda Chen ◽  
Wen-Fan Chen ◽  
Tina Majidi ◽  
Bernadette Pudadera ◽  
Armand Atanacio ◽  
...  

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