Critical dimension control of 0.18-μm logic with dual polysilicon gate

2000 ◽  
Author(s):  
Kung Linliu ◽  
Yu-I Wang
Keyword(s):  
Critical Dimension ◽  
Polysilicon Gate ◽  
Dimension Control

Spectroscopic ellipsometric scatterometry: sources of errors in critical dimension control

2003 ◽  
Author(s):  
Jerome Hazart ◽  
Gilles Grand ◽  
Philippe Thony ◽  
David Herisson ◽  
Stephanie Garcia ◽  
...  
Keyword(s):  
Critical Dimension ◽  
Dimension Control

Effect of Additive Gases on Dimension Control during Cl2-Based Polysilicon Gate Etching

1998 ◽  
Vol 37 (Part 1, No. 7A) ◽  
pp. 3889-3893 ◽  
Author(s):  
Ho-Seok Lee ◽  
Bum-Jin Jun ◽  
Dong-Duk Lee ◽  
Ki-Ho Baik ◽  
Yeo-Song Seol
Keyword(s):  
Polysilicon Gate ◽  
Dimension Control

Critical dimension control using ultrashort laser for improving wafer critical dimension uniformity

2015 ◽  
Vol 14 (3) ◽  
pp. 033510 ◽  
Author(s):  
Dan Avizemer ◽  
Ofir Sharoni ◽  
Sergey Oshemkov ◽  
Avi Cohen ◽  
Asaf Dayan ◽  
...  
Keyword(s):  
Critical Dimension ◽  
Dimension Control ◽  
Ultrashort Laser

Critical Dimension Control in Synchrotron Radiation Lithography Using a Negative-Tone Chemical Amplification Resist

1997 ◽  
Vol 36 (Part 1, No. 12B) ◽  
pp. 7591-7596 ◽  
Author(s):  
Hiroaki Sumitani ◽  
Hiroshi Watanabe ◽  
Kenji Itoga ◽  
Takashi Hifumi ◽  
Muneyoshi Suita ◽  
...  
Keyword(s):  
Synchrotron Radiation ◽  
Critical Dimension ◽  
Chemical Amplification ◽  
Dimension Control ◽  
Negative Tone

Defining Conditions for the Etching of Silicon in an Inductive Coupled Plasma Reactor

1999 ◽  
Vol 605 ◽  
Author(s):  
H. Ashraf ◽  
J. K. Bhardwaj ◽  
E. Guibarra ◽  
S. Hall ◽  
J. Hopkins ◽  
...  
Keyword(s):  
Plasma Reactor ◽  
Etching Rate ◽  
Critical Dimension ◽  
High Rate ◽  
Chemical Components ◽  
Effective Strategies ◽  
Variation Of Parameters ◽  
Process Support ◽  
Dimension Control ◽  
Physical And Chemical

AbstractIn high-density fluorinated plasma processes, the mechanisms that fundamentally limit the etching of silicon are poorly understood. In an effort to improve our understanding of limits to the performance of such systems, the etching of silicon wafers in an inductive coupled plasma reactor, using SF6, has been studied. A systematic empirical investigation has allowed us to define many of the experimental parameters that control the etching rate.There is little temperature dependence of etching which suggests a diffusion limited process. Systematic variation of parameters controlling the rate of etching: total pressure in the reactor, flow rate, partial pressure of reactive species and the rf power supplied to the discharge enable us to accurately define the performance of the system. Experiments, which segregate the physical and chemical components of the etching process, support the conclusion that etching is dominated by electrically neutral species. These various results are interpreted in terms of accepted models for the reactive chemistry in plasmas containing SF6.The MEMS industry is placing ever greater demands on etching processes, and there is a need to achieve the high degrees of anisotropy, and critical dimension control, at high etch-rates. The approach outlined allows us to develop effective strategies for evolving improved systems for the high rate plasma etching of silicon.

The Benefits of Process Parameter Ramping During The Plasma Etching of High Aspect Ratio Silicon Structures

1998 ◽  
Vol 546 ◽  
Author(s):  
J. Hopkins ◽  
H. Ashraf ◽  
J. K. Bhardwaj ◽  
A. M. Hynes ◽  
I. Johnston ◽  
...  
Keyword(s):  
Aspect Ratio ◽  
Plasma Etching ◽  
Etch Rate ◽  
Critical Dimension ◽  
Optical Devices ◽  
Aspect Ratios ◽  
Dimension Control ◽  
Silicon Structures ◽  
High Etch Rate ◽  
Product Specifications

AbstractIn the ongoing enhancement of MEMS applications, the STS Advanced Silicon Etch, (ASETM). process satisfies the demanding requirements of the industry. Typically, highly anisotropic. high aspect ratios profiles with fine CD (critical dimension) control are required. Selectivities to photoresist of 150:1 with Si etch rates of up to 10μm/min are demonstrated. Applications range from shallow etched optical devices to through wafer membrane etches. This paper details some of the fundamental trends of the ASETM process and goes on to discuss how the process has been enhanced to meet product specifications. Parameter ramping is a powerful technique used to achieve the often-conflicting requirements of high etch rate with good profile/CD control. The results are presented in this paper.

Critical dimension control for prevention of wafer-to-wafer and module-to-module difference

2004 ◽  
Author(s):  
Masatoshi Deguchi ◽  
Kouichirou Tanaka ◽  
Naohiko Nagatani ◽  
Yuichiro Miyata ◽  
Mitsuo Yamashita ◽  
...  
Keyword(s):  
Critical Dimension ◽  
Dimension Control

Critical-dimension control for 100 nm patterns in x-ray lithography

1999 ◽  
Vol 17 (6) ◽  
pp. 3415 ◽  
Author(s):  
Y. Tanaka ◽  
T. Iwamoto ◽  
K. Fujii ◽  
Y. Kikuchi ◽  
Y. Matsui ◽  
...  
Keyword(s):  
Critical Dimension ◽  
X Ray ◽  
Dimension Control
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