High-quality photonic device fabrication using low-energy-ion-implantation-induced intermixing

2000 ◽  
Author(s):  
Vincent Aimez ◽  
Jacques Beauvais ◽  
Jean Beerens ◽  
Hwi Siong Lim ◽  
Seng Lee Ng ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Device Fabrication ◽  
Low Energy ◽  
High Quality ◽  
Photonic Device

The fabrication of high quality silicon junction detectors by low energy ion implantation

1967 ◽  
Vol 203 (1) ◽  
pp. 117-118 ◽  
Author(s):  
S. Kalbitzer ◽  
R. Bader ◽  
H. Herzer ◽  
K. Bethge
Keyword(s):  
Ion Implantation ◽  
Low Energy ◽  
High Quality

Structural changes in silicon-on-insulator material during post-implantation annealing

1986 ◽  
Vol 44 ◽  
pp. 736-737
Author(s):  
C. O. Jung ◽  
S. J. Krause ◽  
S.R. Wilson
Keyword(s):  
Integrated Circuits ◽  
Oxide Layer ◽  
High Speed ◽  
Structural Changes ◽  
Device Fabrication ◽  
Silicon On Insulator ◽  
High Quality ◽  
Radiation Hardened ◽  
Post Implantation ◽  
Very High

Silicon-on-insulator (SOI) structures have excellent potential for future use in radiation hardened and high speed integrated circuits. For device fabrication in SOI material a high quality superficial Si layer above a buried oxide layer is required. Recently, Celler et al. reported that post-implantation annealing of oxygen implanted SOI at very high temperatures would eliminate virtually all defects and precipiates in the superficial Si layer. In this work we are reporting on the effect of three different post implantation annealing cycles on the structure of oxygen implanted SOI samples which were implanted under the same conditions.

Analysis of Silicon-On-Insulator Structures Formed By Oxygen Ion Implantation

1985 ◽  
Vol 43 ◽  
pp. 300-301
Author(s):  
N. Lewis ◽  
E. L. Hall ◽  
A. Mogro-Campero ◽  
R. P. Love
Keyword(s):  
Ion Implantation ◽  
Single Crystal ◽  
Single Crystal Silicon ◽  
Silicon Layer ◽  
Device Fabrication ◽  
Silicon On Insulator ◽  
High Dose ◽  
Crystal Silicon ◽  
Oxygen Ion ◽  
Oxygen Ion Implantation

The formation of buried oxide structures in single crystal silicon by high-dose oxygen ion implantation has received considerable attention recently for applications in advanced electronic device fabrication. This process is performed in a vacuum, and under the proper implantation conditions results in a silicon-on-insulator (SOI) structure with a top single crystal silicon layer on an amorphous silicon dioxide layer. The top Si layer has the same orientation as the silicon substrate. The quality of the outermost portion of the Si top layer is important in device fabrication since it either can be used directly to build devices, or epitaxial Si may be grown on this layer. Therefore, careful characterization of the results of the ion implantation process is essential.

Special Aspects of High-Intensity Low-Energy Ion Implantation

2021 ◽  
Author(s):  
A. I. Ryabchikov ◽  
A. I. Ivanova ◽  
O. S. Korneva ◽  
D. O. Sivin
Keyword(s):  
Ion Implantation ◽  
High Intensity ◽  
Low Energy

Big channeling effects at low-energy ion implantation in silicon

1986 ◽  
Vol 97 (2) ◽  
pp. K135-K139 ◽  
Author(s):  
J. Bollmann ◽  
H. Klose ◽  
A. Mertens
Keyword(s):  
Ion Implantation ◽  
Low Energy

Conducting polymer formed by low energy gold ion implantation

2008 ◽  
Vol 93 (7) ◽  
pp. 073102 ◽  
Author(s):  
M. C. Salvadori ◽  
M. Cattani ◽  
F. S. Teixeira ◽  
I. G. Brown
Keyword(s):  
Ion Implantation ◽  
Conducting Polymer ◽  
Low Energy ◽  
Gold Ion

scholarly journals Engineering of gentiopicroside-producing yeast strain using low-energy ion implantation mediated synthetic biology

2016 ◽  
Vol 30 (4) ◽  
pp. 805-812
Author(s):  
Ting Wang ◽  
Weidong Qian ◽  
Yunfang Fu ◽  
Changlong Cai ◽  
Peihong Mao
Keyword(s):  
Synthetic Biology ◽  
Ion Implantation ◽  
Yeast Strain ◽  
Low Energy

scholarly journals Charge trapping and retention behaviors of Ge nanocrystals distributed in the gate oxide near the gate synthesized by low-energy ion implantation

2007 ◽  
Vol 101 (12) ◽  
pp. 124313 ◽  
Author(s):  
M. Yang ◽  
T. P. Chen ◽  
J. I. Wong ◽  
C. Y. Ng ◽  
Y. Liu ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Charge Trapping ◽  
Gate Oxide ◽  
Low Energy ◽  
Ge Nanocrystals
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