Waveguide properties of TiO 2 /ORMOSIL composite thin films prepared by sol-gel processing on III-V compound semiconductor substrates

2000 ◽  
Author(s):  
Wenxiu Que ◽  
Yee Loy Lam ◽  
Yuen Chuen Chan ◽  
Kantisara Pita ◽  
Ji Zhou ◽  
...  
Keyword(s):  
Thin Films ◽  
Sol Gel ◽  
Compound Semiconductor ◽  
Composite Thin Films ◽  
Semiconductor Substrates ◽  
Gel Processing

Cu-particle-dispersed (K0.5Na0.5)NbO3 composite thin films derived from sol–gel processing

2011 ◽  
Vol 61 (2) ◽  
pp. 403-410 ◽  
Author(s):  
Ge Yu ◽  
Hailong Zhang ◽  
Bo-Ping Zhang ◽  
Jiamin Zhang
Keyword(s):  
Thin Films ◽  
Sol Gel ◽  
Composite Thin Films ◽  
Gel Processing

Structure and electrical properties of CuAlO2 thin films derived by sol–gel processing

2010 ◽  
Vol 22 (6) ◽  
pp. 666-671 ◽  
Author(s):  
Si-Jia Liu ◽  
Hua Wang ◽  
Ji-Wen Xu ◽  
Ming-Fang Ren ◽  
Ling Yang ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Sol Gel ◽  
Gel Processing

Phase transition and piezoelectricity of sol–gel-processed Sm-doped BiFeO3 thin films on Pt(111)/Ti/SiO2/Si substrates

2015 ◽  
Vol 3 (9) ◽  
pp. 2115-2122 ◽  
Author(s):  
Wei Sun ◽  
Jing-Feng Li ◽  
Qi Yu ◽  
Li-Qian Cheng
Keyword(s):  
Thin Films ◽  
Phase Transition ◽  
Sol Gel ◽  
Orthorhombic Phase ◽  
High Quality ◽  
Si Substrates ◽  
Bifeo3 Thin Films ◽  
Gel Processing

We prepared high-quality Bi1−xSmxFeO3 films on Pt(111)/Ti/SiO2/Si substrates by sol–gel processing and found rhombohedral–orthorhombic phase transition with enhanced piezoelectricity.

Submicrometric gratings fabrication from photosensitive organo-silica-hafnia thin films elaborated by sol–gel processing

2012 ◽  
Vol 520 (19) ◽  
pp. 6050-6056 ◽  
Author(s):  
Janyce Franc ◽  
Vincent Barnier ◽  
Francis Vocanson ◽  
Emilie Gamet ◽  
Maryline Lesage ◽  
...  
Keyword(s):  
Thin Films ◽  
Sol Gel ◽  
Gel Processing

Solution-sol-gel processing of lead magnesium niobate thin films

1990 ◽  
Vol 12 (2) ◽  
pp. 29-34 ◽  
Author(s):  
P. Ravindranathan ◽  
S. Komarneni ◽  
A. S. Bhalla ◽  
L. E. Cross ◽  
R. Roy
Keyword(s):  
Thin Films ◽  
Sol Gel ◽  
Lead Magnesium Niobate ◽  
Magnesium Niobate ◽  
Lead Magnesium ◽  
Gel Processing

The preparation of PbTiO3 thin films by sol-gel processing

1993 ◽  
Vol 35 (3) ◽  
pp. 259-263 ◽  
Author(s):  
Liu Meidong ◽  
Wang Peiying ◽  
Wu Guoan ◽  
Rao Yunhua
Keyword(s):  
Thin Films ◽  
Sol Gel ◽  
Gel Processing

Synthesis and Ferroelectric Properties of Sol–Gel Derived Intergrowth-Superlattice-Structured SrBi4Ti4O15-Bi4Ti3O12 Thin Films

2011 ◽  
Vol 197-198 ◽  
pp. 1781-1784
Author(s):  
Hua Wang ◽  
Jian Li ◽  
Ji Wen Xu ◽  
Ling Yang ◽  
Shang Ju Zhou
Keyword(s):  
Thin Films ◽  
Remanent Polarization ◽  
Annealing Temperature ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Hysteresis Loops ◽  
Si Substrates ◽  
Gel Processing ◽  
Coercive Electric Field ◽  
Clockwise Hysteresis

Intergrowth-superlattice-structured SrBi4Ti4O15–Bi4Ti3O12(SBT–BIT) films prepared on p-Si substrates by sol-gel processing. Synthesized SBT–BIT films exhibit good ferroelectric properties. As the annealing temperature increases from 600°C to 700°C, the remanent polarization Prof SBT–BIT films increases, while the coercive electric field Ecdecreases. SBT–BIT films annealed at 700°C have a Prvalue of 18.9µC/cm2which is higher than that of SBT (16.8µC/cm2) and BIT (14.6µC/cm2), and have the lowest Ecof 142 kV/cm which is almost the same as that of SBT and BIT. The C-V curves of Ag/SBT-BIT/p-Si heterostructures show the clockwise hysteresis loops which reveal the memory effect due to the polarization. The memory window in C-V curve of Ag/SBT-BIT/p-Si is larger than that of Ag/SBT/p-Si heterostructure or Ag/BIT/p-Si heterostructure.

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