Nonlinear ring resonator: spatial pattern generation

2000 ◽  
Author(s):  
Vladimir Y. Ivanov ◽  
Svetlana L. Lachinova ◽  
Nikita G. Irochnikov

Experimental evidence indicates that tissue interaction plays an essential role during skin pattern formation. Here we focus on the mathematical aspects of two specific tissue interaction models. Introducing interaction mechanisms into the traditional pattern formation models is not only biologically consistent, but also leads to results agreeing more closer to those observed in embryogenesis. We specifically examine the bifurcations from spatially simple solutions to spatially complex patterns. In both models this increased complexity in solution is obtained by increasing the effect of the interaction mechanism through a certain threshold. The role of tissue interaction in sequential patterning is also considered.


2003 ◽  
Author(s):  
Kelly A. Digian ◽  
Michael Brown

2001 ◽  
Author(s):  
Michael F. Brown ◽  
Sue Yang ◽  
Kelly Digian

2003 ◽  
Vol 766 ◽  
Author(s):  
Vineet Sharma ◽  
Arief B. Suriadi ◽  
Frank Berauer ◽  
Laurie S. Mittelstadt

AbstractNormal photolithography tools have focal depth limitations and are unable to meet the expectations of high resolution photolithography on highly topographic structures. This paper shows a cost effective and promising technique of combining two different approaches to achieve critical dimensions of traces on slope pattern continuity on highly topographic structures. Electrophoretically deposited photoresist is used on 3-D structured wafers. This photoresist coating technique is fairly known in the MEMS industries to achieve uniform and conformal photoresist films on 3D surfaces. Multi step exposures are used to expose electrophoretically deposited photoresist. AlCu (Cu-0.5%), 0.47-0.53 μm thick metal film is deposited on 3D structured silicon substrate to plate photoresist. By combining these two novel methods, metal (AlCu) traces of 75 μm line width and 150 μm pitch (from top flat to down the slope) have been demonstrated on isotropically etched 350 μm deep trenches with 5-10% line width loss.


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