Experimental study of hydrogen-free DLC film deposition by XeCl (308 nm) pulsed laser ablation

2000 ◽  
Author(s):  
Tie-jun Li ◽  
Jingru Liu ◽  
Li-ge Wang
Author(s):  
M. Grant Norton ◽  
C. Barry Carter

Pulsed-laser ablation has been widely used to produce high-quality thin films of YBa2Cu3O7-δ on a range of substrate materials. The nonequilibrium nature of the process allows congruent deposition of oxides with complex stoichiometrics. In the high power density regime produced by the UV excimer lasers the ablated species includes a mixture of neutral atoms, molecules and ions. All these species play an important role in thin-film deposition. However, changes in the deposition parameters have been shown to affect the microstructure of thin YBa2Cu3O7-δ films. The formation of metastable configurations is possible because at the low substrate temperatures used, only shortrange rearrangement on the substrate surface can occur. The parameters associated directly with the laser ablation process, those determining the nature of the process, e g. thermal or nonthermal volatilization, have been classified as ‘primary parameters'. Other parameters may also affect the microstructure of the thin film. In this paper, the effects of these ‘secondary parameters' on the microstructure of YBa2Cu3O7-δ films will be discussed. Examples of 'secondary parameters' include the substrate temperature and the oxygen partial pressure during deposition.


1997 ◽  
Vol 295 (1-2) ◽  
pp. 77-82 ◽  
Author(s):  
A. Giardini Guidoni ◽  
A. Mele ◽  
T.M. Di Palma ◽  
C. Flamini ◽  
S. Orlando ◽  
...  

Author(s):  
Р.И. Романов ◽  
В.Ю. Фоминский ◽  
П.В. Зинин ◽  
И.А. Троян ◽  
Д.В. Фоминский ◽  
...  

AbstractStructural features of CB_ x films obtained by pulsed laser ablation of targets made of pressed diamond powder with boron-powder additions at B/C atomic ratio of x = 0.33 have been studied. The films were deposited on heated substrates, so that diffusion processes involving C and B atoms on the surface and in the volume of films were possible. Selected conditions of film deposition ensured their effective doping with boron (0.4 ≤ x ≤ 0.6). The incorporation of B atoms was accompanied by the formation of B–C chemical bonds, whereas the formation of sp ^2 graphite bonds and their ordering in clusters with laminar packing was suppressed. The films possessed very low resistivity (~1.4 mΩ cm) at room temperature and exhibited metallic type of conductance on decreasing the temperature to 77 K.


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