Quantum dot active regions for extended-wavelength (1.0 μm to 1.3 μm) GaAs-based heterostructure lasers and vertical-cavity surface-emitting lasers

1999 ◽  
Author(s):  
Diana L. Huffaker ◽  
Gyoungwon Park ◽  
Z. Zou ◽  
Oleg B. Shchekin ◽  
Dennis G. Deppe
Keyword(s):  
Quantum Dot ◽  
Active Regions ◽  
Cavity Surface ◽  
Surface Emitting Lasers ◽  
Vertical Cavity Surface ◽  
Emitting Lasers ◽  
Vertical Cavity

Self-heating effect in 1.3 μm p-doped InAs/GaAs quantum dot vertical cavity surface emitting lasers

2010 ◽  
Vol 107 (6) ◽  
pp. 063107
Author(s):  
D. W. Xu ◽  
C. Z. Tong ◽  
S. F. Yoon ◽  
L. J. Zhao ◽  
Y. Ding ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Cavity Surface ◽  
Heating Effect ◽  
Self Heating ◽  
Surface Emitting Lasers ◽  
Vertical Cavity Surface ◽  
Emitting Lasers ◽  
Gaas Quantum Dot ◽  
Vertical Cavity

Quantum dot vertical-cavity surface-emitting lasers

2003 ◽  
pp. 226-263
Author(s):  
Victor M. Ustinov ◽  
Alexey E. Zhukov ◽  
Anton Yu. Egorov ◽  
Nikolai A. Maleev
Keyword(s):  
Quantum Dot ◽  
Cavity Surface ◽  
Surface Emitting Lasers ◽  
Vertical Cavity Surface ◽  
Emitting Lasers ◽  
Vertical Cavity

Measurement of resonant-mode blueshifts in quantum-dot vertical-cavity surface-emitting lasers

1998 ◽  
Author(s):  
James A. Lott ◽  
Michael J. Noble ◽  
John P. Loehr ◽  
Nikolai N. Ledentsov ◽  
Victor M. Ustinov ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Resonant Mode ◽  
Cavity Surface ◽  
Surface Emitting Lasers ◽  
Vertical Cavity Surface ◽  
Emitting Lasers ◽  
Vertical Cavity

scholarly journals Влияние параметров короткопериодной сверхрешетки InGaAs/InGaAlAs на эффективность фотолюминесценции

2020 ◽  
Vol 46 (22) ◽  
pp. 27
Author(s):  
С.С. Рочас ◽  
И.И. Новиков ◽  
А.Г. Гладышев ◽  
Е.С. Колодезный ◽  
А.В. Бабичев ◽  
...  
Keyword(s):  
Active Regions ◽  
Cavity Surface ◽  
X Ray Diffraction ◽  
Barrier Layer Thickness ◽  
Inp Substrate ◽  
Short Period ◽  
Surface Emitting Lasers ◽  
Vertical Cavity Surface ◽  
Emitting Lasers ◽  
Vertical Cavity

The results of the study of heterostructures based on short-period InGaAs/InGaAlAs superlattices fabricated by molecular beam epitaxy on an InP substrate with the aim of using them as active regions for vertical-cavity surface emitting lasers of the 1.3 μm spectral range are studied. Photoluminescence and X-ray diffraction studies of the fabricated heterostructures are carried out. It was shown that a change in the ratio of the quantum well thickness and the barrier layer thickness of the superlattice allows one to controllably shift the position of the photoluminescence peak and to provide the heterostructure parameters necessary to achieve lasing at a wavelength of 1.3 μm, while the photoluminescence efficiency remains practically unchanged.

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