Group-theory approach within the framework of the tight-binding model

1999 ◽  
Author(s):  
Alexey E. Madison
2003 ◽  
Vol 02 (01n02) ◽  
pp. 37-48 ◽  
Author(s):  
Wei Cheng ◽  
Shang-Fen Ren

Electronic States of Si and Ge QDs of 5 to 3127 atoms with saturated shapes in a size range of 0.57 to 4.92 nm for Si and 0.60 to 5.13 nm for Ge are calculated by using an empirical tight-binding model combined with the irreducible representations of the group theory. The results are compared with those of Si and Ge quantum dots with spherical shape. The effects of the shapes on electronic states in QDs are discussed.


AIP Advances ◽  
2021 ◽  
Vol 11 (1) ◽  
pp. 015127
Author(s):  
Qiuyuan Chen ◽  
Jiawei Chang ◽  
Lin Ma ◽  
Chenghan Li ◽  
Liangfei Duan ◽  
...  

2021 ◽  
Vol 154 (16) ◽  
pp. 164115
Author(s):  
Rebecca K. Lindsey ◽  
Sorin Bastea ◽  
Nir Goldman ◽  
Laurence E. Fried

2005 ◽  
Vol 31 (8) ◽  
pp. 585-595 ◽  
Author(s):  
D. A. Areshkin ◽  
O. A. Shenderova ◽  
J. D. Schall ◽  
D. W. Brenner

Sign in / Sign up

Export Citation Format

Share Document